CCD视频信号处理器件单粒子效应试验
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摘要
文章利用重离子地面模拟源,采用图像分析方法,开展了CCD视频信号处理器件单粒子效应系统性试验与测试研究。首先介绍了器件单粒子效应(SEE)试验方案、试验测试系统组成;然后通过试验研究获得了器件单粒子翻转(SEU)和单粒子锁定(SEL)特征参数,评估了视频信号处理器件单粒子翻转、单粒子锁定效应对系统成像性能的影响。试验结果表明:地面试验测试系统可有效实时判断、统计该器件单粒子效应发生事件,并能直观实时观察到单粒子事件发生时遥感图像的变化;视频信号处理器件随着重离子LET值增大,其单粒子截面呈增加趋势,器件对重离子诱发的单粒子效应比较敏感;单粒子锁定对光学遥感器成像任务的危害程度高于单粒子翻转。最后给出了采取单粒子锁定防护建议。
The system test research of single event effects on CCD video signal processor was carried out by heavy-ion source and image analysis method in the paper.The structure of test system and the test schemes were detailedly introduced at first.Then the SEU/SEL characteristic parameters were acquired,and the SEE/SEL effects on the imaging performance of the system were evaluated.The results show that the test system can effectively and timely judge the SEEs,and visually display the corresponding change of the remote sensing image.With the increase of the LET value of heavy iron,the cross section of single event enlarges,and the device becomes more sensitive to SEE induced by heavy-ion.SEL is more harmful to optical remote sensor imaging mission than SEU.Lastly,suggestion is given about adopting systematic enhanced measure for SEL.
The system test research of single event effects on CCD video signal processor was carried out by heavy-ion source and image analysis method in the paper.The structure of test system and the test schemes were detailedly introduced at first.Then the SEU/SEL characteristic parameters were acquired,and the SEE/SEL effects on the imaging performance of the system were evaluated.The results show that the test system can effectively and timely judge the SEEs,and visually display the corresponding change of the remote sensing image.With the increase of the LET value of heavy iron,the cross section of single event enlarges,and the device becomes more sensitive to SEE induced by heavy-ion.SEL is more harmful to optical remote sensor imaging mission than SEU.Lastly,suggestion is given about adopting systematic enhanced measure for SEL.
引文
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[14]贺朝会,李国政,罗晋生.CMOS SRAM单粒子翻转效应的解析分析[J].半导体学报,2000,21(2):174-177.HE Chaohui,LI Guozheng,LUO Jinsheng.Analysis of Single Event Upset in CMOS SRAMs[J].Chinese Journal of Semicon Ductors,2000,21(2):174-177.(in Chinese)
[15]杨世宇,曹洲,薛玉雄.空间单粒子锁定及防护技术研究[J].核电子学与探测技术,2008,28(5):945-948.YANG Shiyu,CAO Zhou,XUE Yuxiong.Research on the Single Event Latchup in the Space and It's Protechtion Technology[J].Nuclear Electronics&Detection Technology,2008,28(5):945-948.(in Chinese)
[2]丁义刚.空间辐射环境单粒子效应研究[J].航天器环境工程,2007,24(5):283-290.DING Yigang.Single Event Effects in Space Radiation Environment[J].Spacecraft Environment Engineering,2007,24(5):283-290.(in Chinese)
[3]王同权,沈永平,王尚武.空间辐射环境中的辐射效应[J].国防科技大学学报,1999,21(4):36-39.WANG Tongquan,SHEN Yongping,WANG Shangwu.Radiation Effects in the Space Radiation Environment[J].Journal of National University of Defense Technology,1999,21(4):36-39.(in Chinese)
[4]薛玉雄,杨生胜,把得东.空间辐射环境诱发航天器故障或异常分析[J].真空与低温,2012,18(2):63-70.XUE Yuxiong,YANG Shengsheng,BA Dedong.Analyze of Spacecraft System Failures and Anomalies Attributed to the Natural Space Radiation Environment[J].Vacuum&Cryogenics,2012,18(2):63-70.(in Chinese)
[5]朱光武,李保权.空间环境对航天器的影响及其对策研究[J].上海航天,2002,19(4):1-7.ZHU Guangwu,LI Baoquan.Space Environment Effect and Countermeasure Research on Spacecraft[J].Aerospace Shanghai,2002,19(4):1-7.(in Chinese)
[6]王忠明,姚志斌,郭红霞.SRAM型FPGA的静态与动态单粒子效应试验[J].原子能科学技术,2011,45(12):1506-1510.WANG Zhongming,YAO Zhibin,GUO Hongxia.Static and Dynamic Tests of Single-event Effect in SRAM-based FPGA[J].Atomic Energy Science and Technology,2011,45(12):1506-1510.(in Chinese)
[7]孟猛,唐民,于庆奎,等.CCD外围商用器件单粒子效应试验研究[J].核电子学与探测技术,2011,31(4):428-435.MENG Meng,TANG Min,YU Qingkui,et al.The Study of Single Event Effects on CCD Related Commercial Integrated Circuits[J].Nuclear Electronics&Detection Technology,2011,31(4):428-435.(in Chinese)
[8]宋凝芳,朱明达,潘雄.SRAM型FPGA单粒子效应试验研究[J].宇航学报,2012,33(6):836-842.SONG Ningfang,ZHU Mingda,PAN Xiong.Experimental Study of Single Event Effects in SRAM-based FPGA[J].Journal of Astronautics,2012,33(6):836-842.(in Chinese)
[9]王斌.重离子辐照微纳级SRAM器件单粒子效应研究[D].兰州:中国科学院大学(中国科学院近代物理研究所),2017.WANG Bin.Investigation of Single Event Effects Induced by Heavy Ions in Micro/Nano SRAM Devices[D].Lanzhou:University of Chinese Academy of Sciences(Institute of Modern Physics),2017.(in Chinese)
[10]董建婷,张旭辉.光学遥感器光电信号处理系统的空间辐射效应研究[J].航天返回与遥感,2009,30(4):57-62.DONG Jianting,ZHANG Xuhui.Space Radiation Effect on Photoelectric Signal Processing System of Optical Remote Sensor[J].Spacecraft Recovery&Remote Sensing,2009,30(4):57-62.(in Chinese)
[11]陈晨,徐微,张善从.Flash型FPGA单粒子效应测试系统设计[J].电子测量技术,2014,37(9):70-78.CHEN Chen,XU Wei,ZHANG Shancong.Design of Single Event Effect Testing System on Flash-based FPGA[J].Electronic Measurement Technology,2014,37(9):70-78.(in Chinese)
[12]刘建成,李志常,李淑媛.重离子辐照效应检测系统的研制[J].原子能科学技术,2004,38(增刊):227-230.LIU Jiancheng,LI Zhichang,LI Shuyuan.The Test System for the Study on Irradiation Effects Induced by Heavy Ions[J].Atomic Energy Science and Technology,2004,38(z1):227-230.(in Chinese)
[13]赵大鹏,唐民.采用串列静电加速器进行单粒子效应模拟试验研究[J].宇航学报,1995,16(2):85-89.ZHAO Dapeng,TANG Min.The Simulation Test Research of Single Event Effect by Tandem Accelerator[J].Journal of Astronautics,1995,16(2):85-89.(in Chinese)
[14]贺朝会,李国政,罗晋生.CMOS SRAM单粒子翻转效应的解析分析[J].半导体学报,2000,21(2):174-177.HE Chaohui,LI Guozheng,LUO Jinsheng.Analysis of Single Event Upset in CMOS SRAMs[J].Chinese Journal of Semicon Ductors,2000,21(2):174-177.(in Chinese)
[15]杨世宇,曹洲,薛玉雄.空间单粒子锁定及防护技术研究[J].核电子学与探测技术,2008,28(5):945-948.YANG Shiyu,CAO Zhou,XUE Yuxiong.Research on the Single Event Latchup in the Space and It's Protechtion Technology[J].Nuclear Electronics&Detection Technology,2008,28(5):945-948.(in Chinese)