穿通增强型硅光电晶体管的结构及参数优化
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摘要
为克服各种常用光电探测器件的缺点,对穿通增强型硅光电晶体管进行了结构优化和参数优化。将窄基区穿通晶体管仅在一侧与宽基区光电晶体管复合的传统结构,改进为窄基区穿通晶体管在中间,两侧各复合一个长度减半的宽基区光电晶体管。同时,对不同窄基区宽度下的暗电流、光生电流及光电响应率等随偏压变化的电学性能和光电转换特性进行仿真,得到窄基区宽度最优参数。然后对优化后的器件在不同光强下的光生电流和光电响应率随偏压的变化进行了仿真,分析了器件在不同光强下的响应特性。结果表明,当窄基区宽度为0.6μm时,器件性能折中达到最优,在0.5 V偏压下,器件暗电流仅为1μA;入射光功率密度为10-7W/cm2时,器件响应率高达4×106A/W。
We optimize the structure and parameters of the punchthrough enhanced phototransistor.We change the structure from traditional form,which is the combination of a NB(Narrow Base) punchthrough transistor and a WB(Wide Base) phototransistor to just one side,to a new shape of the narrow base punchthrough transistor sandwiched in two wide base phototransistors which are both half of the old length.We investigate the electrical properties and optical conversion performance of the device such as dark current,photocurrent and optical sensitivity versus bias voltage with different width of the narrow base region.The optimized width of the narrow base is obtained after we analyze the simulated result.The analysis of the photocurrent and optical sensitivity versus bias voltage with different light power are presented to reveal the character of different light power.When the width of the narrow base is 0.6 μm,the performance of the device is a optimum compromise.The dark current is only 1 μA when the bias voltage is 0.5 V.The optical sensitivity is 4×106 A/W when the light power is 10-7 W/cm2.
We optimize the structure and parameters of the punchthrough enhanced phototransistor.We change the structure from traditional form,which is the combination of a NB(Narrow Base) punchthrough transistor and a WB(Wide Base) phototransistor to just one side,to a new shape of the narrow base punchthrough transistor sandwiched in two wide base phototransistors which are both half of the old length.We investigate the electrical properties and optical conversion performance of the device such as dark current,photocurrent and optical sensitivity versus bias voltage with different width of the narrow base region.The optimized width of the narrow base is obtained after we analyze the simulated result.The analysis of the photocurrent and optical sensitivity versus bias voltage with different light power are presented to reveal the character of different light power.When the width of the narrow base is 0.6 μm,the performance of the device is a optimum compromise.The dark current is only 1 μA when the bias voltage is 0.5 V.The optical sensitivity is 4×106 A/W when the light power is 10-7 W/cm2.
引文
[1]LUO Hong-e,GU Jin-liang,CHEN Ping.Velocity Measurement Based on Orthogonal CCD Shadow Photograph System inBallistic Range[J].The Journal of China Universities of Posts and Telecommunications,2010,17(1):127-130.
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[9]宋海兰,黄辉,崔海林.InGaAs/Si雪崩光电二极管[J].半导体光电,2010,31(5):702-704.SONG Hai-lan,HUANG Hui,CUI Hai-lin.InGaAs/Si Avalanche Photodiodes[J].Semiconductor Optoelectronics,2010,31(5):702-704.
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[11]DENG Guang-qing,WEI Ting,CHEN Chang-jia,et al.Distributed Upload Bandwidth Assigning Algorithm in P2P VoDSystem[J].The Journal of China Universities of Posts and Telecommunications,2011,18(6):78-88.
[12]史瑞,陈治明.4H-SiC紫外光光电晶体管模拟与分析[J].西安理工大学学报,2011,27(1):1-6.SHI Rui,CHEN Zhi-ming.Simulation and Analysis of 4H-SiC Ultraviolet Phototransistor[J].Journal of Xi'an University ofTechnology,2011,27(1):1-6.
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[15]ZHOU Q,GUO S X,DU G T.High Dynamic Range Photodetecting Scheme Based on PEPT with a Large Output Swing[J].IEEE Transcations on Electron Devices,2012,59(5):1423-1429.
[2]解天骄,郭文滨,阮圣平.基于Pt电极的TiO2紫外探测器研究[J].吉林大学学报:信息科学版,2012,30(2):116-119.XIE Tian-jiao,GUO Wen-bin,RUAN Sheng-ping.Research on TiO2 Ultraviolet Photodetectors with Pt electrodes[J].Journalof Jilin University:Information Science Edition,2012,30(2):116-119.
[3]黄敏敏,朱兴龙.硅光电探测器的发展与应用[J].机械工程与自动化,2011,6(4):203-205.HUANG Min-min,ZHU Xing-long.Development and Application of Silicon Photodetectors[J].Mechanical Engineering&Automation,2011,6(4):203-205.
[4]STOPPA D,SIMONI A,GOMZO L.Novel CMOS Image Sensor with a 132-dB Dynamic Range[J].IEEE Journal ofSolid-State Circuit,2002,37(12):1846-1852.
[5]富容国,常本康,钱芸生.PIN光电二极管探测器响应特性测试[J].光学与光电技术,2007,5(1):11-13.FU Rong-guo,CHANG Ben-kang,QIAN Yun-sheng.Testing System of the Detector Circuit of PIN Photodiode[J].Optics&Optoelectronic Technology,2007,5(1):11-13.
[6]XU Zhi-gang,CHEN Ying-mei,WANG Tao,et al.A 40 Gbit/s Fully Integrated Optical Receiver Analog Front-End in 90 nmCMOS[J].The Journal of China Universities of Posts and Telecommunications,2012,19(1):124-128.
[7]LI En-ling,CHEN Gui-can,WANG Jin-fu.Circuit Topology Analysis of CMOS LNA in Mobile Communication System[J].The Journal of China Universities of Posts and Telecommunications,2004,11(2):103-107.
[8]张燕,曾光宇,洪志刚.硅PIN光电二极管探测系统的研究[J].核电子学与探测技术,2008,28(2):391-393.ZHANG Yan,ZENG Guang-yu,HONG Zhi-gang.Research of the Silicon PIN Diode Detecting System[J].NuclearElectronics&Detection Technology,2008,28(2):391-393.
[9]宋海兰,黄辉,崔海林.InGaAs/Si雪崩光电二极管[J].半导体光电,2010,31(5):702-704.SONG Hai-lan,HUANG Hui,CUI Hai-lin.InGaAs/Si Avalanche Photodiodes[J].Semiconductor Optoelectronics,2010,31(5):702-704.
[10]詹玉书,任军,谭胜斌.用雪崩光电二极管进行光电外差检测的研究[J].西安电子科技大学学报,1996,23(2):171-175.ZHAN Yu-shu,REN Jun,TAN Sheng-bin.Studies of Optoelectronic Heterodyne Detection with Avalanche Photodiode[J].Journal of Xidian University,1996,23(2):171-175.
[11]DENG Guang-qing,WEI Ting,CHEN Chang-jia,et al.Distributed Upload Bandwidth Assigning Algorithm in P2P VoDSystem[J].The Journal of China Universities of Posts and Telecommunications,2011,18(6):78-88.
[12]史瑞,陈治明.4H-SiC紫外光光电晶体管模拟与分析[J].西安理工大学学报,2011,27(1):1-6.SHI Rui,CHEN Zhi-ming.Simulation and Analysis of 4H-SiC Ultraviolet Phototransistor[J].Journal of Xi'an University ofTechnology,2011,27(1):1-6.
[13]阎凤章,李国辉,韩卫.穿通型光电晶体管的直流特性测试[J].北京师范大学学报:自然科学版,1994,30(2):228-231.YAN Feng-zhang,LI Guo-hui,HAN Wei.Measurements of the Direct-Current Properties of a Punch-Through Phototransistor[J].Journal of Beijing Normal University:Natural Science,1994,30(2):228-231.
[14]LIU X,GUO S X,ZOU C.Punchthrough Enhanced Phototransistor Fabricated in Standard CMOS Process[J].IEEE ElectronDevice Letters,2009,30(3):272-274.
[15]ZHOU Q,GUO S X,DU G T.High Dynamic Range Photodetecting Scheme Based on PEPT with a Large Output Swing[J].IEEE Transcations on Electron Devices,2012,59(5):1423-1429.