IGCT在快脉冲条件下开通过程研究
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摘要
集成门极换流晶闸管(IGCT)开关具有耐压高、通流能力强、工作重频高的特点,然而在纳秒级脉冲功率系统中应用较少。本文以株洲南车生产的非对称性IGCT做开关,通过搭建脉冲形成网络(PFN)纳秒级放电回路,初步研究了IGCT在快放电过程中的开关导通情况。通过理论分析、数值模拟和实验验证发现,目前工业领域的IGCT器件由于触发电流难以有效扩展导通,导致IGCT导通速度存在饱和值,很难在纳秒级别的脉冲下直接实现开关作用,但可以作为脉冲压缩的前级开关使用。
Integrated Gate Commutated Thyristor(IGCT) switches are widely applied in electric and electronics industry for its high voltage,large current and high working frequency. Nevertheless, IGCT switches are rarely adopted in nanosecond long pulse power systems. Through constructing nanosecond Pulse Forming Network(PFN) discharge electric circuit,the switching process of unsymmetrical IGCT produced by Rolling Stock Corporation(RSC) company is investigated under fast pulse conditions. Through theoretic analysis and numerical simulation,it shows that it is difficult for the triggering currency to be expanded and switched efficiently, which causes the velocity of IGCT and expending speed will reach saturated values, and therefore, the industrial IGCT cannot achieve a direct role in the nanosecond level switching pulses, but can be used as pulse compression pre-switch.
Integrated Gate Commutated Thyristor(IGCT) switches are widely applied in electric and electronics industry for its high voltage,large current and high working frequency. Nevertheless, IGCT switches are rarely adopted in nanosecond long pulse power systems. Through constructing nanosecond Pulse Forming Network(PFN) discharge electric circuit,the switching process of unsymmetrical IGCT produced by Rolling Stock Corporation(RSC) company is investigated under fast pulse conditions. Through theoretic analysis and numerical simulation,it shows that it is difficult for the triggering currency to be expanded and switched efficiently, which causes the velocity of IGCT and expending speed will reach saturated values, and therefore, the industrial IGCT cannot achieve a direct role in the nanosecond level switching pulses, but can be used as pulse compression pre-switch.
引文
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[9]段大鹏,江秀臣,孙才新,等.IGCT的原理性电学模型与动态特性仿真[J].高电压技术,2008,34(1):196-200.(DUAN Dapeng,JIANG Xiuchen,SUN Caixin.Principle electrics model of IGCT and dynamic characteristic simulation[J].High Voltage Engineering,2010,34(1):196-200.)
[10]谌怡,夏连胜,王卫,等.基于光导开关和平板线的固态脉冲功率技术[J].太赫兹科学与电子信息学报,2014,2(12):32-36.(CHEN Yi,XIA Liansheng,WANG Weiet al.Solid-state pulsed power technology based on PCSS and planar lines[J].Journal of Terahertz Science and Electronic Information Technology,2014,2(12):32-36.)
[11]甘孔银,黎明,金晓,等.用于10 k V IGBT固态开关的脉冲变压器设计[J].太赫兹科学与电子信息学报,2005,3(3):63-65.(GAN Kongyin,LI Ming,JIN Xiao,et al.Design of pulse transformer for 10 k V IGBT solid switch[J].Journal of Terahertz Science and Electronic Engineering Technology,2005,3(3):63-65.)
[2]赵籍九,尹兆升.粒子加速器技术[M].北京:高等教育出版社,2006.(ZHAO Jijiu,YIN Zhaosheng.Particle Accelerator Technology[M].Beijing:Higher Education Press,2006.)
[3]POKRYVAILO A,YANKELEVICH Y,WOLF M,et al.A high-power pulsed corona source for pollution control applications[J].IEEE Transactions on Plasma Science,2004,32(5):2045-2054.
[4]TOURY M,VERMARE C,ETCHESSAHAR B,et al.Iderix:balancing circuit for a 5 k V/50 ns pulsed power switch based on Si C JFET super cascode[C]//16th International Pulsed Power Conference.New Mexico Albuquerque:IEEE,2007:599-602.
[5]BUTSCHEN T,ETEXBERRIA G S,STAGGE H,et al.Gate Drive Unit for a dual-GCT[C]//8th International Conference on Power Electronics ECCE Asia.The Shilla Jeju,Korea:[s.n.],2011:2419-2426.
[6]HARTMANN W,ROEMHELD,ROHDE M,et al.All-solid-state power modulator for pulsed corona plasma reactors[J].IEEE Transactions on Dielectrics and Electrical Insulation,2017,14(4):858-862.
[7]WELLEMAN A,LEUTWYLER R,WALDMEYER J,et al.High current,high voltage solid state discharge switches for electromagnetic launch applications[C]//Semiconductors CH-5600.Lenzburg:ABB Switzerland Ltd,2008:1-5.
[8]郭帆,何小平,王海洋,等.晶闸管触发开通特性[J].强激光与粒子束,2012,24(10):2483-2487.(GUO Fan,HE Xiaoping,WANG Haiyang,et al.Thyristor trigger opening characteristic[J].High Power Laser and Particle Beam,2012,24(10):2483-2487.)
[9]段大鹏,江秀臣,孙才新,等.IGCT的原理性电学模型与动态特性仿真[J].高电压技术,2008,34(1):196-200.(DUAN Dapeng,JIANG Xiuchen,SUN Caixin.Principle electrics model of IGCT and dynamic characteristic simulation[J].High Voltage Engineering,2010,34(1):196-200.)
[10]谌怡,夏连胜,王卫,等.基于光导开关和平板线的固态脉冲功率技术[J].太赫兹科学与电子信息学报,2014,2(12):32-36.(CHEN Yi,XIA Liansheng,WANG Weiet al.Solid-state pulsed power technology based on PCSS and planar lines[J].Journal of Terahertz Science and Electronic Information Technology,2014,2(12):32-36.)
[11]甘孔银,黎明,金晓,等.用于10 k V IGBT固态开关的脉冲变压器设计[J].太赫兹科学与电子信息学报,2005,3(3):63-65.(GAN Kongyin,LI Ming,JIN Xiao,et al.Design of pulse transformer for 10 k V IGBT solid switch[J].Journal of Terahertz Science and Electronic Engineering Technology,2005,3(3):63-65.)