电子辐照改善可控硅触发性能的研究
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摘要
应用电子束射线对单向微触发可控硅晶圆片进行不同条件的辐照,使用晶体管图示仪测试其门极触发电流和通态电压,研究了辐照剂量、剂量率对门极触发电流和通态电压的影响,使用不同的退火工艺对辐照后的可控硅进行退火实验,监测其退火后参数的变化。实验表明,门极触发电流随辐照剂量的增加而迅速增大,辐照剂量在20 k Gy以下时,通态电压基本没有增加;门极触发电流在可控硅约225℃以下退火时,存在反退火现象,继续提高退火温度又表现出正常的退火结果;1.5 Me V电子辐照技术不仅能有效提高可控硅门极触发电流,还能提高晶圆片门极触发电流的一致性。
The goal of this work was to study the irradiation effect of silicon controlled rectifier( SCR) wafer by electron beams. The triggering gate current and on-state voltage drop of SCR were tested by utilizing transistor characteristic instrument. More important,the effects of different irradiation dose and dose rate on the triggering gate current and onstate voltage drop were analyzed. The annealing effects on SCR parameters under different anneal processing methods were compared. The experimental results showed that the triggering gate current had good positive correlation with the irradiation dose. Under 20 k Gy,the irradiation had no considerable change to the on-state voltage drop. The triggering gate current of SCR had inverse annealing effect after annealing below 225 ℃. 1. 5 Me V electron irradiation could increase the value of the triggering gate current of SCR wafer effectively,and also could improve the consistency.
The goal of this work was to study the irradiation effect of silicon controlled rectifier( SCR) wafer by electron beams. The triggering gate current and on-state voltage drop of SCR were tested by utilizing transistor characteristic instrument. More important,the effects of different irradiation dose and dose rate on the triggering gate current and onstate voltage drop were analyzed. The annealing effects on SCR parameters under different anneal processing methods were compared. The experimental results showed that the triggering gate current had good positive correlation with the irradiation dose. Under 20 k Gy,the irradiation had no considerable change to the on-state voltage drop. The triggering gate current of SCR had inverse annealing effect after annealing below 225 ℃. 1. 5 Me V electron irradiation could increase the value of the triggering gate current of SCR wafer effectively,and also could improve the consistency.
引文
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[18]陆妩,郑玉展,任迪远,等.工艺条件对双极晶体管低剂量率辐射损伤增强效应的影响[J].原子能科学技术,2010,44(1):114-120.
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[20]GB/T 12560-1999,半导体器件分立器件分规范[S].
[2]邹睿,林理彬.多束质子辐照晶闸管的退火研究[J].半导体技术,2001,26(11):71-73.
[3]王志达.X射线总剂量辐射对晶闸管导通特性的影响研究[D].广州:华南理工大学,2011.
[4]BALIGA B J.Fundamentals of power semiconductor devices[M].New York:Springer,2008.
[5]郭帆,何小平,王海洋,等.晶闸管触发开通特性[J].强激光与粒子束,2012,24(10):2483-2487.
[6]电力电子论坛.光伏发电系统中的晶闸管逆变器设计[EB/OL].http://www.p-e-china.com/neir.asp?newsid=18279,2013-1-18.
[7]路秋生.ICL8001G可控硅调光LED驱动电路与应用[J].灯与照明,2011,35(1):24-29.
[8]刘国辉,田石.快速晶闸管通态特性的改善[J].半导体技术,2014,39(3):188-192.
[9]陈星弼,张庆中.晶体管原理与设计(第二版)[M].北京:电子工业出版社,2007.
[10]罗方颖.注入水平对少子复合行为影响的研究[D].杭州:浙江大学,2010.
[11]王博,赵有文,董志远,等.高温退火后非掺杂磷化铟材料的电子辐照缺陷[J].物理学报,2007,56(3):1603-1607.
[12]张志平.大功率晶闸管通态特性研究[D].武汉:华中科技大学,2005.
[13]朱佳政,杨丙凡,胡跃明,等.双能量质子束辐照晶闸管的研究[J].核技术,2002,25(2):86-88.
[14]WANG Z Y,CHEN Z L,LIU Y J,et al.Electron beam irradiation technology for decreasing the hFE value of transistor[J].Radiation Physics and Chemistry,1993,42(4-6):1035-1038.
[15]唐方元,李向兵,唐伯坤.辐照损伤的半导体元器件的电子束退火[J].四川大学学报(自然科学版),1987,24(1):107-110.
[16]智晶.浅淡半导体封装工艺[J].科技致富向导,2011(24):370-370.
[17]钟志亲.6H-Si C的辐射效应研究[D].成都:四川大学,2007.
[18]陆妩,郑玉展,任迪远,等.工艺条件对双极晶体管低剂量率辐射损伤增强效应的影响[J].原子能科学技术,2010,44(1):114-120.
[19]梁李敏,解新建,郝秋艳,等.退火对电子辐照氮化镓光电性能的影响[J].2012,41(6)1524-1527.
[20]GB/T 12560-1999,半导体器件分立器件分规范[S].