忆阻器单阻态下的记忆电容行为及多态特性
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摘要
采用供体-受体类型的共聚物构建了Al/共聚物/ITO结构的有机记忆器件,并对其电流-电压(I-V)和电容-电压(C-V)特性进行了研究.结果表明:器件不仅表现出明显的记忆电阻特征,而且在单个电阻状态下还存在记忆电容行为,使器件呈现出两种电阻状态和与之对应的四种电容状态,具有电阻和电容的双参量记忆能力.在此基础上对器件的电容开关行为进行了电压幅值的调制,使器件出现了更多的电容状态,为多级存储的实现提供了一条有效途径.最后通过引入分子内部极化算符,建立了记忆电阻和记忆电容的关联性,给出了描述器件双参量多状态特征的矩阵模型.
With the advent of the information age, big data put forward higher requirements for capacity of storage devices. Compared with the method of reducing the size of the device to enhance the integration level, the high density storage of increasing the memory state of the single device will be very beneficial to solving the problem.In this work, we propose an idea of two-parameter and multi-state memory device involved in both resistance and capacitance operation levels. At first, a new donor-acceptor(D-A)-type copolymer is designed and synthesized. Then, the memory device of Al/copolymer/ITO structure is fabricated, and the current-voltage(I-V) and capacitance-voltage(C-V) curves are measured by a KEITHLEY 4200 semiconductor characterization system. The device not only displays the obvious memory resistance characteristics, but also has the memory capacitance behavior in single resistance state, which results in two resistance states and four capacitance states, so that the device has the capability of two-parameter and multi-state memory. In addition, the device shows more capacitance states after the switching behavior has been modulated by the voltage amplitude, which provides an effective method to control the memory states. In order to study the conductive mechanism of the device, we test the relationship between resistance and temperature. It is found that the resistance decreases with the increase of temperature, indicating that the device has the obvious semiconductor properties.Furthermore, the fitting results of I-V data show that the mechanism of resistance switching is in good consistence with the classical trap-controlled space charge limited current theory. The capacitance switching in single resistance state is closely related to the polarization characteristic of D-A structure in the copolymer film.The polarization force microscopy phase image shows that the copolymer film has obvious polarization and depolarization characteristics under the external electric field. Based on the polarization characteristics of copolymer, the correlation between memory resistance and memory capacitance is established by introducing a polarization operator of molecules, and the matrix model describing the two-parameter and multi-state memory characteristics is given. The above results show that the multi-state memory characteristics will store more information than 2-bits mode in a single cell, which will provide a reference for improving the storage density of information.
With the advent of the information age, big data put forward higher requirements for capacity of storage devices. Compared with the method of reducing the size of the device to enhance the integration level, the high density storage of increasing the memory state of the single device will be very beneficial to solving the problem.In this work, we propose an idea of two-parameter and multi-state memory device involved in both resistance and capacitance operation levels. At first, a new donor-acceptor(D-A)-type copolymer is designed and synthesized. Then, the memory device of Al/copolymer/ITO structure is fabricated, and the current-voltage(I-V) and capacitance-voltage(C-V) curves are measured by a KEITHLEY 4200 semiconductor characterization system. The device not only displays the obvious memory resistance characteristics, but also has the memory capacitance behavior in single resistance state, which results in two resistance states and four capacitance states, so that the device has the capability of two-parameter and multi-state memory. In addition, the device shows more capacitance states after the switching behavior has been modulated by the voltage amplitude, which provides an effective method to control the memory states. In order to study the conductive mechanism of the device, we test the relationship between resistance and temperature. It is found that the resistance decreases with the increase of temperature, indicating that the device has the obvious semiconductor properties.Furthermore, the fitting results of I-V data show that the mechanism of resistance switching is in good consistence with the classical trap-controlled space charge limited current theory. The capacitance switching in single resistance state is closely related to the polarization characteristic of D-A structure in the copolymer film.The polarization force microscopy phase image shows that the copolymer film has obvious polarization and depolarization characteristics under the external electric field. Based on the polarization characteristics of copolymer, the correlation between memory resistance and memory capacitance is established by introducing a polarization operator of molecules, and the matrix model describing the two-parameter and multi-state memory characteristics is given. The above results show that the multi-state memory characteristics will store more information than 2-bits mode in a single cell, which will provide a reference for improving the storage density of information.
引文
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[15] Salaoru I, Khiat A, Li Q, Berdan R, Prodromakis T 2013Appl. Phys. Lett. 103 233513
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[17] Pan R B, Li J, Zhuge F, Zhu L Q, Liang L Y, Zhang H L,Gao J H, Cao H T, Fu B, Li K 2016 Appl. Phys. Lett. 108013504
[18] Hu L X, Fu S, Chen Y H, Cao H T, Liang L Y, Zhang H L,Gao J H, Wang J R, Zhuge F 2017 Adv. Mater. 29 1606927
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[20] Fujii T, Kawasaki M, Sawa A, Akoh H, Kawazoe Y, Tokura Y 2005 Appl. Phys. Lett. 86 012107
[21] Ko Y, Kim Y, Baek H, Cho J 2011 ACS Nano 5 9918
[22] Sun Y, Ai C, Lu J, Li L, Wen D, Bai X 2016 Thin Solid Films 598 293
[23] Wang H, Meng F B, Gai Y R, Zheng L Y, Li Y G, Liu Y J,Jiang Y Y, Wang X T, Chen X D 2013 Adv. Mater. 25 5498
[24] Mohanta K, Majee S K, Batabyal S K, Pal A J 2006 J. Phys.Chem. B 110 18231
[25] Zhang Y, Kong L, Ju X, Zhao J 2017 Polymers 10 23
[26] Irgashev R A, Teslenko A Y, Zhilina E F, Schepochkin A V,El'Tsov O S, Rusinov G L, Charushin V N 2014 Tetrahedron70 4685
[2] Strukov D B, Snider G S, Stewart D R, Williams R S 2008Nature 453 80
[3] Wang Y, Dong R X, Yan X L 2015 Acta Phys. Sin. 64 048402(in Chinese)[王媛,董瑞新,闫循领2015物理学报64 048402]
[4] Wang M, Cai S H, Pan C, Wang C Y, Lian X J, Zhuo Y, Xu K, Cao T J, Pan X Q, Wang B G, Liang S J, Yang J J,Wang P, Miao F 2018 Nat. Electron. 1 130
[5] Yu Z Q, Liu M L, Lang J X, Qian K, Zhang C H 2018 Acta Phys.Sin.67 157302(in Chinese)[余志强,刘敏丽,郎建勋,钱楷,张昌华2018物理学报67 157302]
[6] Banerjee W, Liu Q, Lv H, Long S, Liu M 2017 Nanoscale 914442
[7] Yan X, Wang J, Zhao M, Li X, Wang H, Zhang L, Lu C, Ren D 2018 Appl. Phys. Lett. 113 013503
[8] Wang L Y, Wang Z Y, Zhao W, Hu B, Xie L H, Yi M D,Ling H F, Zhang C X, Chen Y, Lin J Y, Zhu J L, Huang W2017 Adv. Electron. Mater. 3 1600244
[9] Ventra M D, Pershin Y V,Chua L O 2009 Proc. IEEE 971717
[10] Pershin Y V, Di Ventra M 2011 Adv. Phys. 60 145
[11] Bessonov A A, Kirikova M N,Petukhov D I, Allen M,Ryhanen T, Bailey M J A 2015 Nat. Mater. 14 199
[12] Haik M Y, Ayesh A I, Abdulrehman T, Haik Y 2014 Mater.Lett. 124 67
[13] Albamartin M, Firmager T, Atherton J, Rosamond M C,Ashall D, Ghaferi A A, Ayesh A, Gallant A J, Mabrook M F,Petty M C, Zeze D A 2012 J. Phys. D:Appl. Phys. 45 295401
[14] Yan Z B, Liu J M 2013 Sci. Rep. 3 2482
[15] Salaoru I, Khiat A, Li Q, Berdan R, Prodromakis T 2013Appl. Phys. Lett. 103 233513
[16] Park M, Park S, Yoo K H 2016 ACS Appl. Mater. Interfaces8 14046
[17] Pan R B, Li J, Zhuge F, Zhu L Q, Liang L Y, Zhang H L,Gao J H, Cao H T, Fu B, Li K 2016 Appl. Phys. Lett. 108013504
[18] Hu L X, Fu S, Chen Y H, Cao H T, Liang L Y, Zhang H L,Gao J H, Wang J R, Zhuge F 2017 Adv. Mater. 29 1606927
[19] Menzel S, Bottger U, Waser R 2012 J. Appl. Phys. 111014501
[20] Fujii T, Kawasaki M, Sawa A, Akoh H, Kawazoe Y, Tokura Y 2005 Appl. Phys. Lett. 86 012107
[21] Ko Y, Kim Y, Baek H, Cho J 2011 ACS Nano 5 9918
[22] Sun Y, Ai C, Lu J, Li L, Wen D, Bai X 2016 Thin Solid Films 598 293
[23] Wang H, Meng F B, Gai Y R, Zheng L Y, Li Y G, Liu Y J,Jiang Y Y, Wang X T, Chen X D 2013 Adv. Mater. 25 5498
[24] Mohanta K, Majee S K, Batabyal S K, Pal A J 2006 J. Phys.Chem. B 110 18231
[25] Zhang Y, Kong L, Ju X, Zhao J 2017 Polymers 10 23
[26] Irgashev R A, Teslenko A Y, Zhilina E F, Schepochkin A V,El'Tsov O S, Rusinov G L, Charushin V N 2014 Tetrahedron70 4685