纳米记忆元件推动电子科技实现重大突破

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英文篇名：Nano Memory Element to Promote The Electronic Science and Technology to Achieve a Major Breakthrough 作者：于凌宇 ; 刘夏飞 英文作者：YU Ling-yu;LIU Xia-fei;Puyang College of engineering,Henan University;Puyang Municipal People's Air Defense Office; 关键词：记忆元件 ; 忆阻器 ; 忆容器 ; 忆感器 ; 研发 ; 突破 英文关键词：Memory element;;Memory resistor;;Memory capacitor;;Memory inductor;;Research and development;;breakthrough 中文刊名：KJPL 英文刊名：Journal of China Academy of Electronics and Information Technology 机构：河南大学濮阳工学院;濮阳市人民防空办公室; 出版日期：2016-02-20 出版单位：中国电子科学研究院学报 年：2016 期：v.11;No.63 语种：中文; 页：KJPL201601003 页数：6 CN：01 ISSN：11-5401/TN 分类号：19-24

摘要

该文阐述了纳米记忆元件的内涵和工作机理,探讨了记忆元件的国内外研发进展,深入分析了记忆元件对电子科技的重大突破。为我国紧密跟踪记忆元件科技前沿,精准找好切入点,奋力抢占制高点提供一定的技术基础。
        In this paper,the connotation and working mechanism of nano memory element are described,research and development progress of memory element at home and abroad is discussed,this paper also makes in-depth analysis major breakthrough on electronic science and technology of memory element. It is instructive and helpful technologically for our country to keep up with the science and technology development of memory elements,to find the breakthrough points and to seize the leading position internationally.

引文

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