中波碲镉汞雪崩光电二极管的增益特性
|
摘要
采用不同工艺制备了中波碲镉汞(Hg Cd Te)雪崩二极管(APD)器件,利用不同方法对其结特性和增益随偏压变化关系进行了表征,并基于Beck模型和肖克莱解析式进行了拟合分析.结果表明,不同工艺制备的APD器件饱和耗尽区宽度分别为1. 2μm和2. 5μm,较宽的耗尽层有效抑制了高反偏下器件的隧道电流,器件有效增益则从近100提高至1 000以上.用肖克莱解析式拟合Hg Cd Te APD器件增益-偏压曲线,获得了较好的效果.拟合结果与Sofradir公司的J. Rothman的报道相似.
The midium wave( MW) HgCdTe avalanche photodiodes( HgCdTe APDs) were prepared by two different processes. The pn junction characteristics and the relation between gain and bias voltage for HgCdTe APDs were characterized by two different methods. The gain-bias curves of APDs were fitted based on the Beck model and Shockley' s analytical expression. The results showthat the widths of the saturated depletion region for APDs fabricated by two different processes are 1. 2μm and2. 5μm respectively. The wide depletion region effectively suppresses the tunneling current at high reverse bias. The effective gain of the device increases from nearly 100 to over 1 000. Shockley's analytical expression gives an excellent fit to the gain-bias curves of HgCdTe APDs,and the fitting parameters are similar to the results of J. Rothman at Sofradir.
The midium wave( MW) HgCdTe avalanche photodiodes( HgCdTe APDs) were prepared by two different processes. The pn junction characteristics and the relation between gain and bias voltage for HgCdTe APDs were characterized by two different methods. The gain-bias curves of APDs were fitted based on the Beck model and Shockley' s analytical expression. The results showthat the widths of the saturated depletion region for APDs fabricated by two different processes are 1. 2μm and2. 5μm respectively. The wide depletion region effectively suppresses the tunneling current at high reverse bias. The effective gain of the device increases from nearly 100 to over 1 000. Shockley's analytical expression gives an excellent fit to the gain-bias curves of HgCdTe APDs,and the fitting parameters are similar to the results of J. Rothman at Sofradir.
引文
[1]Singh A,Srivastav V,Pal R.Hg Cd Te avalanche photodiodes:A review[J].Optics&Laser Technology,2011,43:1358-1370.
[2]Rothman J,de Borniol E,Gravrand O,et al.Hg Cd Te APD-focal plane array development at DEFIR[J].Proc.of SPIE,2010,7834:78340O-1-78340O-1-8.
[3]Kinch M A,Beck J D,Wan C F,et al.Hg Cd Te electron avalanche photodiodes[J].Journal of Electronic Materials,2004,33(6):630-639.
[4]Beck J D,Wan C F,Kinch M A,et al.MWIR Hg Cd Te avalanche photodiodes[J].Proc.of SPIE,2001,4454:188-197.
[5]Beck J D,Wan C F,Kinch M A,et al.The Hg Cd Te electron avalanche photodiode[J].Journal of Electronic Materials,2006,35(6):1166-1173.
[6]Beck J,Woodall M,Scritchfield R,et al.Gated IR imaging with 128x128 Hg Cd Te electron avalanche photodiode FPA[J].Proc.of SPIE,2007,6542:654217-1-654217-18.
[7]Baker I,Duncan S,Copley J.A low noise,laser-gated imaging system for long range target identification[J].Proc.of SPIE,2004,5406:133-144.
[8]Baker I,Owton D,Trundle K,et al.Advanced infrared detectors for mult imode active and passive imaging applications[J].Proc.of SPIE,2008,69402:69402L-1-69402L-11.
[9]de Borniol E,Guellec F,Rothman J,et al.Hg Cd Te-based APD focal plane array for 2D and 3D active imaging:first results on a 320×256 with 30?m pitch demonstrator[J].Proc.of SPIE,2010,7660:76603D-1-76603D-9.
[10]de Borniol E,Rothman J,Guellec F,et al.Active threedimensional and thermal imaging with a 30μm pitch 320×256 Hg Cd Te avalanche photodiode focal plane array[J].Optical Engineering,2012,51(6):061305-1-061305-6.
[11]Kerlain A,Bonnouvier G,Rubaldo L,et al.Performance of mid-wave infrared Hg Cd Te e-avalanche photodiodes[J].Journal of Electronic Materials,2012,41(10):2943-2948.
[12]Kinch M A.A theoretical model for the hgcdte electron avalanche photodiode[J].Journal of Electronic Materials,2008,37(9):1453-1459.
[13]Rothman J,Mollard L,Gout S,et al.History-dependent impact ionization theory applied to Hg Cd Te e-APDs[J].Journal of Electronic Materials,2011,40(8):1757-1768.
[14]LIU Xing-Xin.Status of Hg Cd Te avalanche photodiode arrays[J].Laser&Infrared(刘兴新.碲镉汞雪崩光电二极管发展现状.激光与红外),2009,39(9):909-913.
[15]WANG Yi-Feng,CHEN Jie,YU Lian-Jie,et al.Development of mercury cadmium telluride avalanche photodiodes[J].Infrared(王忆锋,陈洁,余连杰,等.碲镉汞雪崩光电二极管的发展.红外),2011,32(10):1-11.
[16]GU Ren-Jie,SHEN Chuan,WANG Wei-Qiang,et al.MBE growth Hg Cd Te avalanche photodiode based on PINstructure[J].Journal of Infrared and Millimeter Waves(顾仁杰,沈川,王伟强,等.MBE生长的PIN结构碲镉汞红外雪崩光电二极管.红外与毫米波学报),2013,32(2):136-140.
[17]Bertazzi F,Moresco M,Penna M,et al.Full-band monte carlo simulation of Hg Cd Te APDs[J].Journal of Electronic Materials,2010,39(7):912-917.
[18]Qiu W C,Hu W D,Chen L,et al.Dark current transport and avalanche mechanism in Hg Cd Te electron-avalanche photodiodes[J].IEEE Transactions on Electron Devices,2015,62:1926-1931.
[19]Li Q,He J L,Hu W D,et al.Influencing sources for dark current transport and avalanche mechanisms in planar and mesa Hg Cd Te p-i-n electron-avalanche photodiodes[J].IEEE Transactions on Electron Devices,2018,65:572-576.
[2]Rothman J,de Borniol E,Gravrand O,et al.Hg Cd Te APD-focal plane array development at DEFIR[J].Proc.of SPIE,2010,7834:78340O-1-78340O-1-8.
[3]Kinch M A,Beck J D,Wan C F,et al.Hg Cd Te electron avalanche photodiodes[J].Journal of Electronic Materials,2004,33(6):630-639.
[4]Beck J D,Wan C F,Kinch M A,et al.MWIR Hg Cd Te avalanche photodiodes[J].Proc.of SPIE,2001,4454:188-197.
[5]Beck J D,Wan C F,Kinch M A,et al.The Hg Cd Te electron avalanche photodiode[J].Journal of Electronic Materials,2006,35(6):1166-1173.
[6]Beck J,Woodall M,Scritchfield R,et al.Gated IR imaging with 128x128 Hg Cd Te electron avalanche photodiode FPA[J].Proc.of SPIE,2007,6542:654217-1-654217-18.
[7]Baker I,Duncan S,Copley J.A low noise,laser-gated imaging system for long range target identification[J].Proc.of SPIE,2004,5406:133-144.
[8]Baker I,Owton D,Trundle K,et al.Advanced infrared detectors for mult imode active and passive imaging applications[J].Proc.of SPIE,2008,69402:69402L-1-69402L-11.
[9]de Borniol E,Guellec F,Rothman J,et al.Hg Cd Te-based APD focal plane array for 2D and 3D active imaging:first results on a 320×256 with 30?m pitch demonstrator[J].Proc.of SPIE,2010,7660:76603D-1-76603D-9.
[10]de Borniol E,Rothman J,Guellec F,et al.Active threedimensional and thermal imaging with a 30μm pitch 320×256 Hg Cd Te avalanche photodiode focal plane array[J].Optical Engineering,2012,51(6):061305-1-061305-6.
[11]Kerlain A,Bonnouvier G,Rubaldo L,et al.Performance of mid-wave infrared Hg Cd Te e-avalanche photodiodes[J].Journal of Electronic Materials,2012,41(10):2943-2948.
[12]Kinch M A.A theoretical model for the hgcdte electron avalanche photodiode[J].Journal of Electronic Materials,2008,37(9):1453-1459.
[13]Rothman J,Mollard L,Gout S,et al.History-dependent impact ionization theory applied to Hg Cd Te e-APDs[J].Journal of Electronic Materials,2011,40(8):1757-1768.
[14]LIU Xing-Xin.Status of Hg Cd Te avalanche photodiode arrays[J].Laser&Infrared(刘兴新.碲镉汞雪崩光电二极管发展现状.激光与红外),2009,39(9):909-913.
[15]WANG Yi-Feng,CHEN Jie,YU Lian-Jie,et al.Development of mercury cadmium telluride avalanche photodiodes[J].Infrared(王忆锋,陈洁,余连杰,等.碲镉汞雪崩光电二极管的发展.红外),2011,32(10):1-11.
[16]GU Ren-Jie,SHEN Chuan,WANG Wei-Qiang,et al.MBE growth Hg Cd Te avalanche photodiode based on PINstructure[J].Journal of Infrared and Millimeter Waves(顾仁杰,沈川,王伟强,等.MBE生长的PIN结构碲镉汞红外雪崩光电二极管.红外与毫米波学报),2013,32(2):136-140.
[17]Bertazzi F,Moresco M,Penna M,et al.Full-band monte carlo simulation of Hg Cd Te APDs[J].Journal of Electronic Materials,2010,39(7):912-917.
[18]Qiu W C,Hu W D,Chen L,et al.Dark current transport and avalanche mechanism in Hg Cd Te electron-avalanche photodiodes[J].IEEE Transactions on Electron Devices,2015,62:1926-1931.
[19]Li Q,He J L,Hu W D,et al.Influencing sources for dark current transport and avalanche mechanisms in planar and mesa Hg Cd Te p-i-n electron-avalanche photodiodes[J].IEEE Transactions on Electron Devices,2018,65:572-576.