0.1～325 GHz频段InP DHBT器件在片测试结构建模
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摘要
给出了InP DHBT器件在片测试用到的开路和短路结构的等效电路模型.模型拓扑结构基于物理结构建立,并对其在亚毫米波段的高频寄生进行相对完整的考虑.模型的容性和阻性寄生采用解析提取技术,从开路结构低频测试数据中获取.模型的高频趋肤效应采用传统物理公式计算初值,并结合短路测试结构的低频解析提取结果对计算公式进行修正,使其适用于实际测试结构建模.模型拓扑结构和参数提取方法,采用0. 5μm InP DHBT工艺上设计所得开路、短路测试结构进行验证.模型仿真和测试所得S参数在0. 1～325 GHz频段内吻合地很好.
The equivalent circuit models for the open and short structures used in InP DHBT on-wafer testing are presented. The model topologies were physically based. The high frequency parasitics of the structures were considered in the model topologies completely. The capacitive and resistive parasitics were extracted from the low frequency measurements of the open structure directly. Tradition physical formulations were employed to have an initial determination of the skin effect elements of the models,and further corrected by using the analytically extracted results from the low frequency measurements of the short structure,which enables an accurate formulation for the test structures modeling. The models and the modeling methodology were verified using the open and short structures manufactured in a 0. 5μm InP DHBT technology. Excellent agreements of the model simulated and measured results are achieved over the frequency range of. 1 ～ 325 GHz.
The equivalent circuit models for the open and short structures used in InP DHBT on-wafer testing are presented. The model topologies were physically based. The high frequency parasitics of the structures were considered in the model topologies completely. The capacitive and resistive parasitics were extracted from the low frequency measurements of the open structure directly. Tradition physical formulations were employed to have an initial determination of the skin effect elements of the models,and further corrected by using the analytically extracted results from the low frequency measurements of the short structure,which enables an accurate formulation for the test structures modeling. The models and the modeling methodology were verified using the open and short structures manufactured in a 0. 5μm InP DHBT technology. Excellent agreements of the model simulated and measured results are achieved over the frequency range of. 1 ～ 325 GHz.
引文
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[2]Yi C,Urteaga M,Choi S H,et al. A 280-GHz InPDHBT receiver detector containing a differential preamplifier[J].IEEE Transactions on Terahertz Science and Technology,2017,7(2):209 217.
[3]Zhang B,Xiong Y Z,Wang L,et al. On the de-embedding issue of millimeter-wave and sub-millimeter-wave measurement and circuit design. IEEE Transactions on Components,Packaging and Manufacturing Technology,Aug 2012.
[4]Guo J C,Tsai Y H. A broadband and scalable lossy substrate model for RF noise simulation and analysis in nanoscale MOSFETs with various pad structures[J]. IEEE Transactions on Microwave Theory and Techniques,2009,57(2):271 281.
[5]Capovilla C E,AS A T,Kretly L C. Design and modeling of an RFIC pad structure and probe contact impedance correction for on-wafer measurements[C]. ICCDCS 2008,Apr 2008.
[6]Liu J,Yu Z P,Sun L L. A broadband model over 1-220GHz for GSG pad structures in RF CMOS[J].? IEEE Electron Device Letters,2014,35(7):696 698.
[7]Rotella F,Bhattacharya BK,Blaschke V,et al. A broadband lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design[J]. IEEE Transactions on Electron Devices,2005,52(7):1429 1441.
[8]Kim S,Neikirk D P. Compact equivalent circuit model for the skin effect[C]. IEEE MTT-S International Microwave Symposium Digest,June 1996.
[9]Mei S,Ismail Y I. Modeling skin and proximity effects with reduced realizable RL circuits[J]. IEEE Transactions on very large scale integration(VLSI)systems,2004,12(4):437 447.