Al/SnO_2/FTO结构双极型电阻开关的制备及其性质研究
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摘要
通过溶胶凝胶的方法,在FTO衬底上制备得到SnO_2薄膜,并对SnO_2薄膜的晶体结构以及荧光光谱(PL)进行了研究。XRD结果显示SnO_2薄膜为多晶结构,荧光光谱结果表明SnO_2薄膜存在氧空位以及氧填隙等缺陷。通过直流磁控溅射在SnO_2薄膜上面溅射Al作为顶电极,并对Al/SnO_2/FTO结构进行了电阻开关性质研究,测试结果表明器件具有双极型电阻开关性质和良好的阻态保持特性。对器件的电流-电压曲线特征进行了研究,认为SnO_2薄膜内氧离子(氧空位)在电场作用下发生迁移,在Al/SnO_2界面发生氧化还原反应是引起Al/SnO_2/FTO电阻状态改变的原因。
A SnO_2 thin film was first prepared on the FTO substrate through the sol-gel method, and its crystal structure and the photoluminescence(PL) of the film were thus studied. The XRD data showed that the SnO_2 film was polycrystalline, and the PL spectrum indicated that there existed oxygen vacancies and the interstitial oxygen defect in the SnO_2 film. The Al top electrode was gained by DC magnetron sputtering on the SnO_2 film, and the switching properties of the Al/SnO_2/FTO memristor were also tested to discover that the device has a bipolar resistive switching property and good state retention characteristic. Finally, from the analysis on the characteristic of current-voltage curves, we demonstrated that the oxygen ions(oxygen vacancies) migrated under appropriate bias voltage, and the redox reaction occurred in the Al/SnO_2 interface was the main reason for the resistive state change.
A SnO_2 thin film was first prepared on the FTO substrate through the sol-gel method, and its crystal structure and the photoluminescence(PL) of the film were thus studied. The XRD data showed that the SnO_2 film was polycrystalline, and the PL spectrum indicated that there existed oxygen vacancies and the interstitial oxygen defect in the SnO_2 film. The Al top electrode was gained by DC magnetron sputtering on the SnO_2 film, and the switching properties of the Al/SnO_2/FTO memristor were also tested to discover that the device has a bipolar resistive switching property and good state retention characteristic. Finally, from the analysis on the characteristic of current-voltage curves, we demonstrated that the oxygen ions(oxygen vacancies) migrated under appropriate bias voltage, and the redox reaction occurred in the Al/SnO_2 interface was the main reason for the resistive state change.
引文
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[4]Gaidi M,Hajjaji A,Smirani R,et al.,Structure and Photoluminescence of Ultrathin Films of SnO[sub 2]Nanoparticles Synthesized by Means of Pulsed Laser Deposition[J].J.Appl.Phys.,2010,108(6):063537.
[5]Chen H T,Xiong S J,Wu X L,et al.,Tin Oxide Nanoribbons with Vacancy Structures in LuminescenceSensitive Oxygen Sensing[J].Nano Lett.,2009,9(5)1926-1931.
[6]Luo S,Chu P K,Liu W,et al.,Origin of Low-temperature Photoluminescence from SnO[sub 2]Nanowires Fabricated by Thermal Evaporation and Annealed in Different Ambients[J].Appl.Phys.Lett.,2006,88(18)183112.
[7]Liu X J,Li X M,Wang Q,et al.,Study on the"Negative"Resistance Switching Properties in Ti/La0.7Ca0.3MnO3/pt Sandwiches Devices[J].J.Inorg.Mater.,2010,25(2):151-156.
[8]Chen C,Pan F,Wang Z S,et al.,Bipolar Resistive Switching with Self-rectifying Effects in Al/ZnO/Si structure[J].J.Appl.Phys.,2012,111(1):013702.