平面硅异质结太阳电池的光吸收增强的研究
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摘要
钙钛矿/硅叠层太阳电池可以充分利用太阳光谱,提高光电转换效率。平面硅异质结太阳电池可以作为叠层电池的底电池,其性能直接影响叠层电池的性能表现。采用传统反应热蒸发技术,在低温(170℃)条件下制备了掺锡氧化铟薄膜,并在170℃的氧气氛围下后退火处理,对ITO薄膜的特性进行了详细的表征和分析。结果表明:后退火工艺改善了ITO的结晶特性,使得材料的光学特性和电学特性得到明显提高,将其应用于平面硅异质结太阳电池,短路电流密度得到极大提高,尤其红外光响应改善明显。引入MgF_2薄膜作为减反射层,进一步增强了电池的光响应,转换效率达到19.04%。
Perovskite/silicon-heterojunction solar cell is a very promising cell structure for using the solar spectrum efficiently and hence improving the energy conversion efficiency. Planar silicon-heterojunction solar cell can be used as the bottom of tandem solar cells,its performance directly affects the performance of tandem solar cells. Tin-doped indium oxide(ITO) films were prepared by traditional reaction thermal evaporation techniques at low temperature(170 ℃) and then annealed in an oxygen atmosphere. The properties of ITO thin films were characterized and analyzed in detail. The results show that the postannealing process improves the crystallinity of ITO,and the optical and electrical properties of the material are enhanced obviously. Applying it to a planar silicon-heterojunction solar cell,the short circuit current density is greatly improved, especially the infrared response of the solar cell is improved obviously. The MgF_2 film is introduced as the anti-reflective coating,and the optical absorption of the solar cell is further enhanced. The conversion efficiency of the solar cell reaches 19. 04%.
Perovskite/silicon-heterojunction solar cell is a very promising cell structure for using the solar spectrum efficiently and hence improving the energy conversion efficiency. Planar silicon-heterojunction solar cell can be used as the bottom of tandem solar cells,its performance directly affects the performance of tandem solar cells. Tin-doped indium oxide(ITO) films were prepared by traditional reaction thermal evaporation techniques at low temperature(170 ℃) and then annealed in an oxygen atmosphere. The properties of ITO thin films were characterized and analyzed in detail. The results show that the postannealing process improves the crystallinity of ITO,and the optical and electrical properties of the material are enhanced obviously. Applying it to a planar silicon-heterojunction solar cell,the short circuit current density is greatly improved, especially the infrared response of the solar cell is improved obviously. The MgF_2 film is introduced as the anti-reflective coating,and the optical absorption of the solar cell is further enhanced. The conversion efficiency of the solar cell reaches 19. 04%.
引文
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[2]Yoshikawa K,Yoshida W,Irie T,et al.Exceeding Conversion Efficiency of 26%by Heterojunction Interdigitated Back Contact Solar Cell With Thin Film Si Technology[J].Solar Energy Materials&Solar Cells,2017:173.
[3]Swanson R M.Approaching the 29%Limit Efficiency of Silicon Solar Cells[C]//IEEE.IEEE,2005:889-894.
[4]Kojima A,Teshima K,Shirai Y,et al.Organometal Halide Perovskites as Visible-light Sensitizers for Photovoltaic Cells[J].Journal of the American Chemical Society,2009,131(17):6050.
[5]Yang W S,Park B W,Jung E H,et al.Iodide Management in Formamidinium-Lead-Halide-Based Perovskite Layers for Efficient Solar Cells[J].Science,2017,356(6345):1376.
[6]White T P,Lal N N,Catchpole K R.Tandem Solar Cells Based on High-Efficiency c-Si Bottom Cells:Top Cell Requirements for>30%Efficiency[J].IEEE Journal of Photovoltaics,2014,4(1):208-214.
[7]Mailoa J P,Bailie C D,Johlin E C,et al.A 2-terminal Perovskite/Silicon Multijunction Solar Cell Enabled by a Silicon Tunnel Junction[J].Applied Physics Letters,2015,106(12):1477.
[8]Albrecht S,Saliba M,Baena J P C,et al.Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells Processed at Low Temperature[J].Energy&Environmental Science,2015,9(1):81-88.
[9]Albrecht S,Saliba M,Correabaena J P,et al.Towards Optical Optimization of Planar Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells[J].Journal of Optics,2016,18(6):064012.
[10]Beal R E,Slotcavage D J,Leijtens T,et al.Cesium Lead Halide Perovskites with Improved Stability for Tandem Solar Cells[J].Journal of Physical Chemistry Letters,2016,7(5):746.
[11]Mcmeekin D P,Sadoughi G,Rehman W,et al.A Mixed-Cation Lead Mixed-Halide Perovskite Absorber for Tandem Solar Cells[J].Science,2016,351(6269):151.
[12]Zhang H,Nakada K,Miyajima S,et al.High-Performance a-Si1-xOx:H/c-Si Heterojunction Solar Cells Realized by the a-Si:H/a-Si1-xOx:H Stack Buffer Layer[J].Physica Status Solidi(RRL)-Rapid Research Letters,2015,9(4):225-229.
[13]Ding K,Aeberhard U,Finger F,et al.Silicon Heterojunction Solar Cell with Amorphous Silicon Oxide Buffer and Microcrystalline Silicon Oxide Contact Layers[J].Physica Status Solidi(RRL)-Rapid Research Letters,2012,6(5):193-195.
[14]Pomaska M,Richter A,Lentz F,et al.Wide Gap Microcrystalline Silicon Carbide Emitter for Amorphous Silicon Oxide Passivated Heterojunction Solar Cells[J].Japanese Journal of Applied Physics,2017,56(2):022302.
[15]Smeets M,Ermes M,Pomaska M,et al.Nanophotonic Light Management for Silicon Heterojunction Solar Cells with Planar Passivation LayersImplementation and Material Perspective[C].Optical Nanostructures and Advanced Materials for Photovoltaics.2016:PTh3A.5.
[16]Smeets M,Bittkau K,Lentz F,et al.Post passivation Light Trapping Back Contacts for Silicon Heterojunction Solar Cells[J].Nanoscale,2016,8(44):18726-18733.
[17]Richter A,Lentz F,Meier M,et al.Light Management in Planar Silicon Heterojunction Solar Cells via Nanocrystalline Silicon Oxide Films and Nano‐Imprint Textures[J].Physica Status Solidi,2016,213(7):1976-1982.
[18]Girtan M,Rusu G I,Rusu G G,et al.Influence of Oxidation Conditions on the Properties of Indium Oxide Thin Films[J].Applied Surface Science,2000,s 162-163(10):492-498.
[19]Alam M J,Cameron D C.Optical and Electrical Properties of Transparent Conductive ITO Thin Films Deposited by Sol–Gel Process[J].Thin Solid Films,2000,377-378(1):455-459.
[20]Oh W K,Hussain S Q,Lee Y J,et al.Study on the ITO Work Function and Hole Injection Barrier at the Interface of ITO/a-Si:H(p)in Amorphous/Crystalline Silicon Heterojunction Solar Cells[J].Materials Research Bulletin,2012,47(10):3032-3035.