一步沉积法中溴基钙钛矿薄膜的优化及应用
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  • 英文篇名:Optimization and Application of Bromide Perovskite Thin Film by One-step Deposition
  • 作者:郑翠翠 ; 辛晨光 ; 黄伟 ; 杜亚雯 ; 石标 ; 朱世杰 ; 姚鑫 ; 范琳 ; 魏长春 ; 丁毅 ; 李跃龙 ; 王广才 ; 许盛之 ; 赵颖 ; 张晓丹
  • 英文作者:ZHENG Cui-cui;XIN Chen-guang;HUANG Wei;DU Ya-wen;SHI Biao;ZHU Shi-jie;YAO Xin;FAN Lin;WEI Chang-chun;DING Yi;LI Yue-long;WANG Guang-cai;XU Sheng-zhi;ZHAO Ying;ZHANG Xiao-dan;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University;
  • 关键词:钙钛矿 ; 前驱体 ; 醋酸铵 ; 高开路电压
  • 英文关键词:perovskite;;precursor;;ammonium acetate;;high open circuit voltage
  • 中文刊名:RGJT
  • 英文刊名:Journal of Synthetic Crystals
  • 机构:南开大学光电子薄膜器件与技术研究所天津市光电子薄膜器件与技术重点实验室;
  • 出版日期:2018-07-15
  • 出版单位:人工晶体学报
  • 年:2018
  • 期:v.47;No.237
  • 基金:国家自然科学基金(61474065,61674084);; 天津市应用基础与前沿技术研究计划(15JCZDJC31300);; 江苏省科技支撑项目(BE2014147-3);; 111引智项目(B16027)
  • 语种:中文;
  • 页:RGJT201807002
  • 页数:7
  • CN:07
  • ISSN:11-2637/O7
  • 分类号:12-18
摘要
溴基钙钛矿太阳电池因其工艺简单、高开压的特性,可在叠层太阳电池、彩色的显示设备和光伏建筑一体化等多方面进行应用而引起人们关注。此文首先研究了一步沉积法中不同溶质前驱体溶液对钙钛矿薄膜形貌和结晶的影响。在优化前驱体溶质条件下,通过加入适量醋酸铵获得均一致密、较大晶粒尺寸、具有择优取向的高质量钙钛矿薄膜,且提高了材料的疏水特性。以Spiro-OMe TAD作为空穴传输层制备器件获得最高1.42 V开路电压、5.87%的电池效率,并在30 d后仍保持89%的效率。
        Bromide perovskite solar cells have attracted much attention due to their simple deposition technique and high open-circuit voltage. They can be applied in many aspects,including tandem solar cells,color display devices and photovoltaic building integration. The influence of the precursor solution of different solutes on the morphology and crystallization of perovskite thin film by one-step deposition method was conducted. Under the optimized solute precursor conditions,high quality perovskite thin film with uniform density,larger grain size and preferred orientation were obtained by adding appropriate amount of ammonium acetate,and the hydrophobic characteristics of the materials were improved. The maximum 1. 42 V open-circuit voltage and 5. 87% efficiency are obtained by using Spiro-OMe TAD as a hole transporting layer in the device,and the efficiency is still 89% after 30 d.
引文
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