一种采用噪声抵消及多重功耗优化技术的UWB-LNA
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摘要
采用噪声抵消及多重功耗优化技术,提出了一种超宽带低噪声低功耗放大器。它主要包括采用RL网络的共栅输入级、电流复用型噪声抵消级、放大输出级以及偏置电路4个部分。验证结果表明,该放大器,在2 GHz~6 GHz频带内,增益(S21)可以在14 d B以上;输入回波损耗(S11)小于-10 d B;输出回波损耗(S22)小于-25 d B;噪声系数(NF)小于3.2 d B;在3.8V的工作电压下,功耗仅为14 m W。
An ultra wideband,low noise and low power amplifier is proposed by employing noise cancellation and multiple power optimization techniques. It mainly includes four cell circuits: the common gate input stage with the RL network,the current reuse noise cancellation stage,the amplifier output stage and the bias circuit. The results show that from 2 to 6 GHz,it has the gain( S21) of more than 14 d B; the input return loss( S11) of less than-10 d B;the output return loss( S22) of less than-25 d B; the noise figure( NF) of less than 3. 2 d B,and the power consumption is 14 mW under the operation voltage of 3.8 V.
An ultra wideband,low noise and low power amplifier is proposed by employing noise cancellation and multiple power optimization techniques. It mainly includes four cell circuits: the common gate input stage with the RL network,the current reuse noise cancellation stage,the amplifier output stage and the bias circuit. The results show that from 2 to 6 GHz,it has the gain( S21) of more than 14 d B; the input return loss( S11) of less than-10 d B;the output return loss( S22) of less than-25 d B; the noise figure( NF) of less than 3. 2 d B,and the power consumption is 14 mW under the operation voltage of 3.8 V.
引文
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[11]Akanksha Sahu,Paresh Chandra Sau,Dheeraj Kalra.Design of Low Power UWB LNA for Frequency 3.1-5 GHz in 0.18μm CMOS Technology[C]//IEEE International Conference on Computing,Communication and Automation(ICCCA),Beijing,China,2015:198-201.
[12]Sana Arshad,Faiza Zafar,Qamarul Wahab.Design of a 4-6 GHz Wideband LNA in 0.13μm CMOS Technology[C]//IEEE International Conference on Electronics Design,Systems and Applications(ICEDSA),Malaysia,2012:125-129.
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[14]Wu H I,Hu R,Jou C F.Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration[C]//IEEE Microw.and Wireless Comp,2010,20(7):402-404.
[2]Huang Z Y,Huang C,Hung Y T,et al.A CMOS Current Reused Low-Noise Amplifier for Ultra-Wideband Wireless Receiver[C]//IEEE International Conference on Microwave and Millimeter Wave Technology(ICMMT),Nanjing,China,2008:1499-1502.
[3]RAZAVI B.模拟CMOS集成电路设计[M].陈贵灿,程军,张瑞智,等译.西安:西安交通大学出版社,2002:191-192.
[4]王忠俊,张万荣,金冬月,等.一种采用有源电感的可调增益小面积超宽带低噪声放大器[J].电子器件,2017,40(1):55-60.
[5]丁春宝,张万荣,金冬月,等.基于Darlington Cascode结构的Si Ge异质结双极晶体管UWB低噪声放大器的设计[J].高技术通讯,2012,22(10):1070-1076.
[6]Xie H Y,Liu S,Zhang L H,et al.Low Power Dissipation Si Ge HBT Dual-Band Variable Gain Amplifier[J].Microelectronics Journal,2015,46(7):626-631.
[7]沈珮,张万荣,金冬月,等.超宽带Si Ge HBT低噪声放大器的设计和分析[J].高技术通讯,2011,21(1):77-82.
[8]Chen Jitian,Zhang Wanrong,Jin Dongyue,et al.An Ultra-Wideband Variable Gain low Noise Amplifier[C]//IEEE International Conference on Ubiquitous Wireless Broadband(ICUWB),Nanjing,China,2016:1-4.
[9]Liu Yaze,Zhang Wanrong,Jin Dongyue,et al.A Low Power Variable Gain Wideband Low Noise Amplifier[C]//IEEE International Conference on Ubiquitous Wireless Broadband(ICUWB),Nanjing,China,2016:1-4.
[10]田晓明,白春风,吴建辉,等.一种智能传感器射频前端的低功耗设计与实现[J].传感技术学报,2014,27(10):1326-1331.
[11]Akanksha Sahu,Paresh Chandra Sau,Dheeraj Kalra.Design of Low Power UWB LNA for Frequency 3.1-5 GHz in 0.18μm CMOS Technology[C]//IEEE International Conference on Computing,Communication and Automation(ICCCA),Beijing,China,2015:198-201.
[12]Sana Arshad,Faiza Zafar,Qamarul Wahab.Design of a 4-6 GHz Wideband LNA in 0.13μm CMOS Technology[C]//IEEE International Conference on Electronics Design,Systems and Applications(ICEDSA),Malaysia,2012:125-129.
[13]Manikandan P,Anu Shaju Areeckal.A Novel CMOS Low Noise Amplifier for UWB Application[C]//IEEE Second International Conference on Advanced Computing and Communication Technologies,Rohtak,Haryana,India,2012:450-453.
[14]Wu H I,Hu R,Jou C F.Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration[C]//IEEE Microw.and Wireless Comp,2010,20(7):402-404.