高功率半导体激光器倍频实现紫外光输出

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英文篇名：Second harmonic generation of ultraviolet laser based on high power laser diode array 作者：胡列懋 ; 李志永 ; 刘松阳 ; 宁方晋 ; 谭荣清 英文作者：Hu Liemao;Li Zhiyong;Liu Songyang;Ning Fangjin;Tan Rongqing;Department of High Power Gas Laser,Institute of Electronics,Chinese Academy of Sciences;School of Electronic,Electronical and Communication Engineering,University of Chinese Academy of Sciences; 关键词：半导体激光器 ; 倍频 ; 紫外光 ; 高功率 英文关键词：laser diode;;second harmonic generation;;ultraviolet light laser;;high power 中文刊名：QJGY 英文刊名：High Power Laser and Particle Beams 机构：中国科学院电子学研究所高功率气体激光技术部;中国科学院大学电子电气与通信工程学院; 出版日期：2019-03-13 15:27 出版单位：强激光与粒子束 年：2019 期：v.31;No.260 基金：国家自然科学基金项目(61875198);; 军委装备发展部领域基金项目(61404140107) 语种：中文; 页：QJGY201902002 页数：2 CN：02 ISSN：51-1311/O4 分类号：5-6

摘要

采用中心波长780nm、线宽0.13nm的体布拉格光栅外腔半导体激光作为基频光,基于Ⅰ类相位匹配的三硼酸锂晶体(LBO),获得了中心波长为390nm的倍频光输出,输出功率30μW,转换效率0.01%,为高功率紫外光束的实现提供了新的技术路线。
        A 780 nm continuous-wave,which is output by extra-cavity semiconductor laser with a bulk bragg grating,is used as the fundamental input light source of the Second Harmonic Generation(SHG)system.Line width of the fundamental light is 0.13 nm.Based on the type I phase-matching and Lithium Triborate(LBO)crystal,390 nm second harmonic is obtained.The emitted average output power is 30μW(SHG efficiency is 0.01%).We provide a new technical route for the achievement of high-power UV beams.

引文

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