CCD及CMOS图像传感器的质子位移损伤等效分析
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摘要
对位移损伤敏感器件CCD及CMOS图像传感器进行了3,10,23 MeV质子辐照试验,获得了电荷转移效率及暗电流退化程度分别随非电离能量损失(NIEL)变化的线性关系,验证了基于NIEL的位移损伤等效方法的可行性。为准确预测抗辐射加固工程中,器件屏蔽结构带来的能量崎离、次级粒子等非理想因素对器件参数退化的影响,利用Geant4计算了不同质子能量下的NIEL值。结果表明,随着质子能量降低,计算得到的NIEL值与解析法给出的理想NIEL值的差异增大。因此,对于结构复杂的器件,有必要建立器件结构模型,以便准确计算NIEL。
To obtain the liner relationship between charge transfer efficiency, dark signal, and non-ionizing energy loss(NIEL), the CCD and CMOS image sensor are irradiated by protons of 3, 10, 23 MeV, respectively. To accurately predict the effect of non-ideal factors such as energy degradation and secondary particles caused by shielding structure on the degradation of device parameters, NIEL at different proton energies is calculated by Geant4 toolkit. The results show that the difference between the calculated NIEL and the ideal NIEL given by analytical method increases with the decrease of proton energy. Therefore, for devices with complex structure, it is necessary to develop a device structure model for accurately calculating NIEL.
To obtain the liner relationship between charge transfer efficiency, dark signal, and non-ionizing energy loss(NIEL), the CCD and CMOS image sensor are irradiated by protons of 3, 10, 23 MeV, respectively. To accurately predict the effect of non-ideal factors such as energy degradation and secondary particles caused by shielding structure on the degradation of device parameters, NIEL at different proton energies is calculated by Geant4 toolkit. The results show that the difference between the calculated NIEL and the ideal NIEL given by analytical method increases with the decrease of proton energy. Therefore, for devices with complex structure, it is necessary to develop a device structure model for accurately calculating NIEL.
引文
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[2] 陈伟,刘杰,马晓华,等.纳米器件空间辐射效应机理和模拟试验技术研究进展[J].科学通报,2018,63(13):1 211-1 222.(CHEN Wei,LIU JIe,MA Xiao-hua,et al.Research progress of radiation effects mechanisms and experimental techniques in nano-devices[J].Chinese Science Bulletin,2018,63(13):1 211-1 222.)
[3] Department of Defense.Ionizing radiation (total dose) test procedure[S].MIL-STD-883K 1019.9,2017.
[4] American Society for Testing and Materials.Standard guide for ionizing radiation (total dose) effects testing of semiconductor devices[S].ASTM F1892-12,2018.
[5] MESSENGER S,SUMMERS G P,BURKE E A,et al.Modeling solar cell degradation in space:A comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches[J].Progress in Photovoltaics and Application,2001,9(12):103-121.
[6] American Society for Testing and Materials.Standard guide for neutron irradiation of unbiased electronic components[S].ASTM F1190-18,2011.
[7] MARSHALL C J.Proton effects and test issues for satellite designers:Displacement effects[J].NSREC,Section IVB 1999:51-110.
[8] SROUR J R,MARSHALL C J,MARSHALL P W.Review of displacement damage effects in silicon devices[J].IEEE Trans Nucl Sci,2003,50(3):653-670.
[9] 汪波,文林,李豫东,等.质子、中子、60Co-γ射线对电荷耦合器件饱和输出电压的影响[J].红外与激光工程,2015,44(S):35-40.(WANG Bo,WEN Lin,LI Yu-dong,et al.Degration of saturation output of CCD induced by proton neutron and cobalt-60 irradiation[J].Infrared and Laser Engineering,2015,44(S):35-40.)
[10] 李豫东,文林,郭旗,等.不同注量率质子辐照对CCD参数退化的影响分析[J].现代应用物理,2018,9(2):020602.(LI Yu-dong,WEN Lin,GUO Qi,et al.Influence of proton with different fluence rates on parameters of CCD[J].Modern Applied Physics,2018,9(2):020602.)
[11] 汪波,李豫东,郭旗,等.质子辐射下互补金属氧化物半导体有源像素传感器暗信号退化机理研究[J].物理学报,2015,64(8):084209.(WANG Bo,LI Yu-dong,GUO Qi,et al.Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor[J].Acta Phys Sin,2015,64(8):084209.)
[12] INGUIMBERT C,GIGANTE R.NEMO:A code to compute NIEL of protons,neutrons,electrons,and heavy ions [J].IEEE Trans Nucl Sci,2006,53(4):1 967-1 972.
[13] AKKERMAN A,BARAK J,CHADWICK M B,et al.Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs[J].Radiation Physics and Chemistry,2001,62:301-310.
[14] JUN I,XAPSOS M A,MESSENGER S R,et al.Proton nonionizing energy loss (NIEL) for device applications [J].IEEE Trans Nucl Sci,2003,50(6):1 924-1 928.
[15] JUN I,KIM W,EVANS R,Electron nonionizing energy loss for device applications[J].IEEE Trans Nucl Sci,2009,56(6):3 229-3 235.
[16] JUN I,MCALPINE W.Displacement damage in silicon due to secondary neutrons,pions,deuterons,and alphas from proton interactions with materials[J].IEEE Trans Nucl Sci,2001,48(6):2 034-2 038.
[17] CONSOLANDI C.Displacement damage induced by cosmic rays in silicon devices using geant4 toolkit for space aApplications[D].Milano:Bicocca University,2009.