坩埚下降法在新材料探索及晶体生长中的应用
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摘要
坩埚下降法是一种重要的晶体生长技术,成功用于生长闪烁晶体锗酸铋(Bi_4Ge_3O_(12))、声光晶体氧化碲(TeO_2)、压电晶体四硼酸锂(Li_2B_4O_7)以及新型弛豫铁电晶体等材料,并实现了产业化。坩埚下降法在层状结构晶体、异型晶体、高通量生长等新材料探索中也有巨大的潜力。本文主要介绍我们团队近年来在坩埚下降法生长硒化锡(SnSe)晶体、全无机铅卤基钙钛矿晶体、高温合金、硅酸铋晶体高通量筛选等方面的研究结果。
The vertical Bridgman method is an important growth technique,which has been successfully applied to grow Bi_4Ge_3O_(12) scintillation crystal,TeO_2 acousto-optical crystal,Li_2B_4O_7 piezoelectric crystal and relaxor ferroelectric crystals.Those crystals have been achieved mass production in China. Compared with other growth techniques,the vertical Bridgman method shows great potential in growth of layer-structure crystals,heterotype crystals and high throughput screening. In this paper,we reported recent progress on Bridgman growth of some functional crystals in our lab.
The vertical Bridgman method is an important growth technique,which has been successfully applied to grow Bi_4Ge_3O_(12) scintillation crystal,TeO_2 acousto-optical crystal,Li_2B_4O_7 piezoelectric crystal and relaxor ferroelectric crystals.Those crystals have been achieved mass production in China. Compared with other growth techniques,the vertical Bridgman method shows great potential in growth of layer-structure crystals,heterotype crystals and high throughput screening. In this paper,we reported recent progress on Bridgman growth of some functional crystals in our lab.
引文
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[44] Dropka N,Holena M,Ecklebe S,et al. Fast forecasting of VGF crystal growth process by dynamic neural networks[J]. Journal of Crystal Growth,2019,521:9-14.
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[47]金敏,徐家跃,何庆波.坩埚下降法生长太阳能电池用砷化镓晶体[J].人工晶体学报,2014,43(4):754-757.
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[49]金敏,徐家跃,谈惠祖,等.水平定向凝固法合成砷化镓多晶[J].应用技术学报,2014,14(3):1-4.
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[51] Mohmad A R,Bastiman F,Hunter C,et al. The effect of Bi composition to the optical quality of Ga As1-xBix[J]. Applied Physics Letters,2011,99(4):3874.
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[61] Zhang Y,Xu J Y,Cui Q Z,et al. Eu3+-doped Bi4Si3O12red phosphor for solid state lighting:microwave synthesis,characterization,photoluminescence properties and thermal quenching mechanisms[J]. Scientific Reports,2017,7:42464.
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[68]汪洪,向勇,项晓东,等.材料基因组———材料研发新模式[J].科技导报,2015:13-19
[2] Stockbarger,Donald C. The Production of Large Single Crystals of Lithium Fluoride[J]. Review of Scientific Instruments,1936,7(3):133-136.
[3] Hurle D T J. Handbook of Crystal Growth[M]. Amsterdam:North-Holland,1994.
[4]徐家跃,范世马岂.坩埚下降法晶体生长[M].北京:化学工业出版社,2015.
[5]徐家跃.科研本土化:通向诺贝尔奖之路(上)[J].科学学与科学技术管理,1996,17(7):4-6.
[6]徐家跃.科研本土化:通向诺贝尔奖之路(下)[J].科学学与科学技术管理,1996,17(8):31-33.
[7] Zhao L D,Lo S H,Zhang Y,et al. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals[J]. Nature,2014,508(7496):373-377..
[8] Zhao L D,Tan G,Hao S,et al. Ultrahigh Power Factor and Thermoelectric Performance in Hole-Doped Single-Crystal Snse[J]. Science,2016,351(6269):141-144.
[9] Wei P C,Bhattacharya S,He J,et al. The intrinsic thermal conductivity of SnSe[J]. Nature,2016,539(7627):E1-E2.
[10] Peng K,Lu X,Zhan H,et al. Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals[J]. Energy&Environmental Science,2016,9(2):454-460.
[11] Duong A T,Nguyen V Q,Duvjir G,et al. Achieving ZT=2. 2 with Bi-doped n-type SnSe single crystals[J]. Nature communications,2016,7:13713.
[12] Jin M,Shao H Z,Hu H Y,et al. Growth and characterization of large size undoped p-type SnSe single crystal by Horizontal Bridgman method[J]. Journal of Alloys and Compounds,2017,712:857-862.
[13] Jin M,Shao H Z,Hu H Y,et al. Single crystal growth of Sn0. 97Ag0. 03Se by a novel horizontal Bridgman method and its thermoelectric properties[J]. Journal of Crystal Growth,2017,460:112-116.
[14] Jin M,Chen Z W,Tan X J,et al. Charge transport in thermoelectric SnSe single crystals[J]. ACS Energy Letters,2018,3:689-694.
[15] Jin M,Shi X L,Feng T,et al. Super Large Sn1-xSe Single Crystals with Excellent Thermoelectric Performance[J]. ACS applied materials&interfaces,2019,11:8051-8059.
[16] Jin M,Jiang J,Li R B,et al.,Growth of large size SnSe single crystal and comparison of its thermoelectric property with polycrystal[J].Materials Research Bulletin,2019,114:156-160.
[17] Chen Z G,Shi X,Zhao L D,et al. High-performance SnSe thermoelectric materials:Progress and future challenge[J]. Progress in Materials Science,2018,97:283-346.
[18] Snyder G J,Toberer E S. Complex thermoelectric materials[M]. Materials For Sustainable Energy:A Collection of Peer-Reviewed Research and Review Articles from Nature Publishing Group,2011:101-110.
[19] Popuri S R,Pollet M,Decourt R,et al. Large thermoelectric power factors and impact of texturing on the thermal conductivity in polycrystalline SnSe[J]. Journal of Materials Chemistry C,2016,4(8):1685-1691.
[20]王娜,申慧,金敏,等.全无机铅卤钙钛矿CsPbX3半导体晶体研究进展[J].硅酸盐学报,2019,47(7):1-11.
[21] Cao Y,Wang N,Tian H,et al. Perovskite light-emitting diodes based on spontaneously formed submicrometre-scale structures[J]. Nature,2018,562(7726):249.
[22] Zheng W,Huang P,Gong Z,et al. Near-infrared-triggered photon upconversion tuning in all-inorganic cesium lead halide perovskite quantum dots[J]. Nature Communications,2018,9(1):3462.
[23]赵军伟,陈媛芝,申慧,等.新型铅卤基钙钛矿材料及其应用[J].应用技术学报,2018,18(4):12-24.
[24] Stoumpos C C,Malliakas C D,Peters J A,et al. Crystal growth of the perovskite semiconductor CsPbBr3:a new material for high-energy radiation detection[J]. Crystal Growth&Design,2013,13(7):2722-2727.
[25] Rakita Y,Kedem N,Gupta S,et al. Low-temperature solution-grown CsPbBr3single crystals and their characterization[J]. Crystal Growth&Design,2016,16(10):5717-5725.
[26] Zhang P,Zhang G,Liu L,et al. Anisotropic optoelectronic properties of melt-grown bulk CsPbBr3single crystal[J]. The Journal of Physical Chemistry Letters,2018,9(17):5040-5046.
[27] Song J,Cui Q,Li J,et al. Ultralarge All-Inorganic Perovskite Bulk Single Crystal for High-Performance Visible-Infrared Dual-Modal Photodetectors[J]. Advanced Optical Materials,2017,5(12):1700157.
[28] Xu J Y,Liang X X,Jin M,et al. Growth and characterization of all-inorganic perovskite CsPbBr3crystal by a traveling zone melting method[J].Inorganic Materials,2018,33(11):1253-1258.
[29] Chen W,Chen H,Xu G,et al. Precise control of crystal growth for highly efficient CsPbI2Br perovskite solar cells[J]. Joule,2019,3(1):191-204.
[30] Turren-Cruz S H,Hagfeldt A,Saliba M. Methylammonium-free,high-performance,and stable perovskite solar cells on a planar architecture[J].Science,2018,362(6413):449-453.
[31] Song J,Li J,Li X,et al. Quantum dot light-emitting diodes based on inorganic perovskite cesium lead halides(CsPbX3)[J]. Adv Mater,2016,27(44):7162-7167.
[32] Li J,Xu L,Wang T,et al. 50-Fold EQE improvement up to 6. 27%of solution-processed all-inorganic perovskite CsPbBr3QLEDs via surface ligand density control[J]. Advanced Materials,2017,29(5):1603885.
[33] Xiang R,Liang X,Xi Q,et al. A chromaticity-tunable white LED by screen-printing red phosphor coating on Pi G plates[J]. Ceramics International,2016,42(16):19276-19282.
[34] Chen D,Xiang W,Liang X,et al. Advances in transparent glass-ceramic phosphors for white light-emitting diodes-A review[J]. Journal of the European Ceramic Society,2015,35(3):859-869.
[35] Chen Q,Wu J,Ou X,et al. All-inorganic perovskite nanocrystal scintillators[J]. Nature,2018,561(7721):88.
[36] Wang Y,Ren Y,Zhang S,et al. Switching excitonic recombination and carrier trapping in cesium lead halide perovskites by air[J].Communications Physics,2018,1(1):96.
[37] Durand-Charre M. The microstructure of superalloys[M]. London:Routledge,2017.
[38] Mathur H N,Panwisawas C,Jones C N,et al. Nucleation of recrystallisation in castings of single crystal Ni-based superalloys[J]. Acta Materialia,2017,129:112-123.
[39] Wu X,Wollgramm P,Somsen C,et al. Double minimum creep of single crystal Ni-base superalloys[J]. Acta Materialia,2016,112:242-260.
[40]梁肖肖,童健,马昕迪,等.镍基高温合金单晶的生长和氧化行为研究[J].应用技术学报,2019,19(2):119-124.
[41] Shi Z X,Li J R,Liu S Z. Isothermal oxidation behavior of single crystal superalloy DD6[J]. Trans. Nonferrous Meter. Soc. China. 2012,3:534-538.
[42]agátováA,Zat’ko B,Necas V,et al. From single Ga As detector to sensor for radiation imaging camera[J]. Applied Surface Science,2018,461:3-9.
[43] Ronghui Z,Yiping Z,Junpeng B,et al. Surface Defects and Micro Defects in LEC Ga As Crystal[J]. Chinese Journal of Semiconductors,2007,28:137-140.
[44] Dropka N,Holena M,Ecklebe S,et al. Fast forecasting of VGF crystal growth process by dynamic neural networks[J]. Journal of Crystal Growth,2019,521:9-14.
[45] Kubanda D,Zat’ko B,agátováA,et al. Performance of bulk semi-insulating Ga As-based sensor and its comparison to Si-based sensor for Timepix radiation camera[J]. Journal of Instrumentation,2019,14(1):C01023.
[46]徐家跃,王冰心,金敏,等. Ga As晶体坩埚下降法生长及掺杂效应[J].人工晶体学报,2015,44(10):2632-2640.
[47]金敏,徐家跃,何庆波.坩埚下降法生长太阳能电池用砷化镓晶体[J].人工晶体学报,2014,43(4):754-757.
[48] Jin M,Shen H,Fan S J,et al. Industrial growth and characterization of Si-doped Ga As crystal by a novel multi-crucible Bridgman method[J].Crystal research and technology,2017,1700052.
[49]金敏,徐家跃,谈惠祖,等.水平定向凝固法合成砷化镓多晶[J].应用技术学报,2014,14(3):1-4.
[50]金敏,徐家跃,房永征,等. LED用硅掺杂Ga As晶体的生长与表征[J].人工晶体学报,2012,41(3):594-598.
[51] Mohmad A R,Bastiman F,Hunter C,et al. The effect of Bi composition to the optical quality of Ga As1-xBix[J]. Applied Physics Letters,2011,99(4):3874.
[52] Lewis R B,Masnadi-Shirazi M,Tiedje T. Growth of high Bi concentration Ga As1-xBixby molecular beam epitaxy[J]. Applied Physics Letters,2012,101(8):963.
[53] Achour H,Louhibi S,Amrani B,et al Structural and electronic properties of Ga As Bi[J]. Superlattices and Microstructures,2008,44(2):223-229.
[54]王冰心,徐家跃,金敏,等.铋掺杂砷化镓晶体的坩埚下降法生长研究[J].人工晶体学报,2015,44(5)1156-1160.
[55] Xu J Y,Wang H,He Q B,et al. Bridgman growth of Bi4Si3O12scintillation crystals[J]. J. Chinese Ceramic Society,2009,37(2):295-298.
[56] Fei Y T,Fan S J,Sun R Y,et al. Crystallizing behavior of Bi2O3-SiO2system[J]. Journal of Materials Science Letters,2000,19(10):893.
[57]徐家跃,冯海威,潘芸芳,等.硅酸铋闪烁晶体及其掺杂改性[J].硅酸盐学报,2017,45(12):1757.
[58] Xu J Y,Jie Wang,Wei Chen,et al. Synthesis,growth and scintillation properties of large size Bi4Si3O12crystals[J]. J. Inorganic Materials,2016,31(10):1147-1150.
[59] Xu J Y,Yang Bobo,Zhang Yan,Development of Doped Bi4Si3O12Crystals for Scintillation,Laser and LED Applications[J]. Materials Focus,2015,4(3):20-27.
[60] Zhang Y,Xu J Y,Lu B L. Spectroscopic properties of Dy3+∶Bi4Si3O12single crystal[J]. J. Alloys and Compounds.,2014,582:635-639.
[61] Zhang Y,Xu J Y,Cui Q Z,et al. Eu3+-doped Bi4Si3O12red phosphor for solid state lighting:microwave synthesis,characterization,photoluminescence properties and thermal quenching mechanisms[J]. Scientific Reports,2017,7:42464.
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