套刻成像技术中波长可调性的准确度优化
摘要
随着半导体制造技术的发展和集成电路元件尺寸的缩减,套刻预算也相应被削减。由于测量系统自身的光学瑕疵,以及光束与测量目标的几何不对称之间的相互作用,套刻预算已经接近测量误差的范围。测量误差对元件良率的影响显著,因而不能将其忽略。在本文中,我们研究了一种基于图像套刻(IBO)测量的新方法。其中采用了波长可调套刻图像量测技术,并优化准确度而非对比精确度,以及研究其对总目标性能的影响。我们展示了基于理论推导的新准确度指标,并将其识别测量准确度与CD-SEM套刻测量的效果进行了比较。本文包括理论论证、模拟结果以及测量数据,这些数据显示了可调性结合新的准确度指标可以提高准确度性能。
引文
[1]Mike Adel,Mark Ghinovker,Boris Golovanevsky,Pavel Izikson,Elyakim Kassel,Dan Yaffe,Alfred M.Bruckstein,Roman Goldenberg,Yossi Rubner,Michael Rudzsky,“Optimized Overlay Metrology Marks:Theory and Experiment”IEEE Trans.on Semiconductor Manufacturing(2004).
[2]C.P.Ausschnitt,J.Morningstar,W.Muth,J.Schneider,R.J.Yerdon,L.A.Binns,and N.P.Smith,“Multi-layer overlay metrology”,Proc.SPIE 6152,615210(2006).
[3]Mike Adel,John A.Allgair,David C.Benoit,Mark Ghinovker,Elyakim Kassel,C.Nelson,John C.Robinson,and Gary S.Seligman,“Performance study of new segmented overlay marks for advanced wafer processing”,Proc.SPIE 5038,453(2003).
[4]Mike Adel,Mark Ghinovker,Jorge M.Poplawski,Elyakim Kassel,Pavel Izikson,Ivan K.Pollentier,Philippe Leray,and David W.Laidler,“Characterization of overlay mark fidelity”,Proc.SPIE 5038,437(2003).
[5]Kazuaki Suzuki(Editor),Bruce W.Smith(Editor),Microlithography:Science and Technology,Part IIIChapter 14,CRC Press,Taylor&Francis Group,2007.
[6]Yeung Joon Sohn,Brian M.Barnes,Lowell Howard,Richard M.Silver,Ravikiran Attota,and Michael T.Stocker“Koehler illumination in high-resolution optical metrology”Proc.SPIE 6152,61523S(2006).Originally published in SPIE Proceedings Volume10585,Metrology,Inspection,and Process Control for Microlithography XXXII;1058532(2018)https://doi.org/10.1117/12.2300153.
[2]C.P.Ausschnitt,J.Morningstar,W.Muth,J.Schneider,R.J.Yerdon,L.A.Binns,and N.P.Smith,“Multi-layer overlay metrology”,Proc.SPIE 6152,615210(2006).
[3]Mike Adel,John A.Allgair,David C.Benoit,Mark Ghinovker,Elyakim Kassel,C.Nelson,John C.Robinson,and Gary S.Seligman,“Performance study of new segmented overlay marks for advanced wafer processing”,Proc.SPIE 5038,453(2003).
[4]Mike Adel,Mark Ghinovker,Jorge M.Poplawski,Elyakim Kassel,Pavel Izikson,Ivan K.Pollentier,Philippe Leray,and David W.Laidler,“Characterization of overlay mark fidelity”,Proc.SPIE 5038,437(2003).
[5]Kazuaki Suzuki(Editor),Bruce W.Smith(Editor),Microlithography:Science and Technology,Part IIIChapter 14,CRC Press,Taylor&Francis Group,2007.
[6]Yeung Joon Sohn,Brian M.Barnes,Lowell Howard,Richard M.Silver,Ravikiran Attota,and Michael T.Stocker“Koehler illumination in high-resolution optical metrology”Proc.SPIE 6152,61523S(2006).Originally published in SPIE Proceedings Volume10585,Metrology,Inspection,and Process Control for Microlithography XXXII;1058532(2018)https://doi.org/10.1117/12.2300153.