微量水分对SF_6局部过热分解特征组分生成的作用机制
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  • 英文篇名:Effect Mechanism of Trace Moisture on Generation of Decomposition Characteristic Components of SF_6 Under Partial Over-thermal Fault
  • 作者:陈晓琳 ; 雷志城 ; 陈林聪 ; 苗玉龙 ; 姚强 ; 张施令
  • 英文作者:CHEN Xiaolin;LEI Zhicheng;CHEN Lincong;MIAO Yulong;YAO Qiang;ZHANG Shiling;Electric Power Research Institute of State Grid Hainan Electric Power Company;School of Electrical Engineering, Wuhan University;Electric Power Research Institute of State Grid Chongqing Electric Power Company;
  • 关键词:微量水分 ; 局部过热缺陷 ; SF_6分解组分 ; 分解特性
  • 英文关键词:trace moisture;;partial over-thermal fault;;SF6decomposition component;;decomposition characteristic
  • 中文刊名:JYCT
  • 英文刊名:Insulating Materials
  • 机构:海南电网有限责任公司电力科学研究院;武汉大学电气工程学院;国网重庆市电力公司电力科学研究院;
  • 出版日期:2019-07-19 16:49
  • 出版单位:绝缘材料
  • 年:2019
  • 期:v.52
  • 基金:中国南方电网有限责任公司科技项目(07300KK52170005)
  • 语种:中文;
  • 页:JYCT201907011
  • 页数:7
  • CN:07
  • ISSN:45-1287/TM
  • 分类号:67-73
摘要
SF_6气体绝缘设备在运行过程中,其内部不可避免地会存在接触不良、磁饱和、磁短路等缺陷,或出现过载故障,可能导致SF_6气体绝缘设备出现局部过热性故障(POF)。在POF作用下,SF_6分解特性与设备中微量的H_2O含量关系极为密切。本文依据微量H_2O对各分解特征组分的生成影响机制,进一步研究了微量H_2O与表征POF故障属性的特征量之间的内在联系。结果表明:微量H_2O对各分解产物特征的生成量有不同程度的影响,但微量H_2O与生成各特征组分的中间产物作用的速率具有明显差异,导致了不同分解特征组分生成量与微量H_2O含量的内在关系区别显著。
        During the operation of SF_6 gas-insulated equipment, the equipment inside exists poor contact,magnetic circuit saturation, and magnetic short-circuit defects inevitablely or appears overload fault, which may cause partial over-thermal fault(POF) of SF_6 gas-insulated equipment. Under the action of POF, the decomposition characteristics of SF_6 are closely related to the content of trace H_2O in the equipment. According to the effect mechanism of trace H_2O on the generation of each decomposition characteristic component, the inner relationship between trace H_2O and the feature parameters of POF were further studied.The results show that trace H_2 O has different effects on the generation amount of different characteristic decomposition products. There are obvious difference in the reaction rates between the intermediate products of each characteristic product and trace H_2O, which leads to the obvious difference of the internal relations between the generation amount of each decomposition characteristic product and the content of trace H_2O.
引文
[1] TOMINAGA S, KUWAHARA H, HIROOKA K, et al. SF6gas analysis technique and its application for evaluation of internal conditions in SF6gas equipment[J]. IEEE Transactions on Power Apparatus and System,1981,PAS-100(9):4196-4206.
    [2]朱宁,雷志城,徐肖庆,等.负极性直流局部放电下SF6分解特性[J].绝缘材料,2019,52(2):58-63,69.
    [3] CHRISTOPHOROU L G, OLTHOFF J K, BRUNT VAN R J. Sulfur hexafluoride and the electric power industry[J].IEEE Electrical Insulation Magazine,1997,13(5):20-24.
    [4] CHU F Y. SF6decomposition in gas-insulated equipment[J].IEEE Transactions on Electrical Insulation,1986,21(5):693-725.
    [5]程林,唐炬,黄秀娟,等. SF6局部过热状态下涉及有机绝缘材料的分解产物生成特性[J].高电压技术,2015,41(2):453-460.
    [6]唐炬,曾福平,孙慧娟,等.微H2O对过热故障下SF6分解特性的影响及校正[J].中国电机工程学报,2015,35(9):2342-2350.
    [7]唐炬,杨东,曾福平,等.基于分解组分分析的SF6设备绝缘故障诊断方法与技术的研究现状[J].电工技术学报,2016,31(20):41-54.
    [8] VAN BRUNT R J, HERRON J T. Plasma chemical model for decomposition of SF6in a negative glow corona discharge[J]. Physica Scripta,1994,T53:9-29.
    [9] International Electrotechnical Commission. Specification of technical grade sulfur hexafluoride(SF6)for use in electrical equipment:IEC 60376-2005[S]. Geneva:IEC,2005.
    [10] International Electrotechnical Commission. Guidelines for the checking and treatment of sulfur hexafluoride(SF6)taken from electrical equipment and specification for its re-use.IEC 60480-2004[S]. Geneva:IEC,2004.
    [11] AUGER P, POGGIALE J C. Emergence of population growth models:fast migration and slow growth[J]. Journal of Theoretical Biology,1996,182(2):99-108.
    [12] SIBLY R M, BARKER D, DENHAM M C, et al. On the regulation of populations of mammals, birds, fish, and insects[J]. Science,2005,309(5734):607-610.

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