一种新型的高增益超宽带低噪声放大器
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摘要
文中提出了一种采用增益提高技术的超宽带低噪声放大器(LNA)。为了通过提高电路的输出阻抗,进而实现改善电路增益的目的,该LNA包含了两级共射共基放大器电路,并在共基晶体管基极引入电感。基于0.13μm SiGe BiCMOS工艺对其进行设计,实现了超宽的31GHz~42GHz的工作频率,增益为20.1dB~30.7dB,噪声系数为1.19dB~1.31dB,并且在1.8V单电源电压供电情况下,消耗的功耗为13.2mW。
This paper presents an ultra-wideband low-noise amplifier(LNA) with gain boosting technology. The circuit consists of two stages of cascode amplifiers with inductive common-base termination,which improves the gain by increasing the output impedance. It implemented the design in 0. 13μm SiGe BiCMOS technology,the proposed LNA has an ultra-wideband operating frequency of 31 GHz to 42 GHz. The proposed high-gain LNA has a gain of 20. 1 dB to 30. 7 dB,and a noise figure within 1. 19 dB to 1. 31 dB,as determined from simulations,while drawing 13. 2 mW from a 1. 8 V supply.
This paper presents an ultra-wideband low-noise amplifier(LNA) with gain boosting technology. The circuit consists of two stages of cascode amplifiers with inductive common-base termination,which improves the gain by increasing the output impedance. It implemented the design in 0. 13μm SiGe BiCMOS technology,the proposed LNA has an ultra-wideband operating frequency of 31 GHz to 42 GHz. The proposed high-gain LNA has a gain of 20. 1 dB to 30. 7 dB,and a noise figure within 1. 19 dB to 1. 31 dB,as determined from simulations,while drawing 13. 2 mW from a 1. 8 V supply.
引文
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[3]Ha BW,Seo CW,Cho CS,et al.Wideband high-isolation SPDT RF switch in 0.18μm Si Ge Bi CMOS technology[J].Analog Integrated Circuit and Signal Processing,2016,87(1):11-19.
[4]Ulusoy A C,Kaynak M,Valenta V,et al.A 110 GHz LNA with 20d B gain and 4 d B noise figure in an 0.13μm Si Ge Bi CMOS technology[C]∥IEEE MTT-S Int.Dig.,2013:1-3.
[5]Liu G,Schumacher H.Broadband millimeter-wave LNAs(47–77GHz and 70–140 GHz)using a T-type matching topology[J].IEEE Journal Solid-State Circuits,2013,48(9):2022-2029.
[6]Jang S,Nguyen C.A high-gain power-efficient wideband V-band LNA in 0.18-μm Si Ge Bi CMOS[J].IEEE Microwave and Wireless Components Letters,2016,26(4):276-278.
[7]Fritsche D,Tretter G,Carta C,et al.Millimeter-wave low-noise amplifier design in 28-nm low-power digital CMOS[J].IEEE Transactions on Microwave Theory and Techniques,2015,63(6):1910-1922.
[8]Hu B,Xiao P,Lim W,et al.Analysis and design of ultra-wideband low-noise amplifier with input/output bandwidth optimization and single-ended/differential-input reconfigurability[J].IEEE Transactions on Industrial Electronics,2014,61(10):5672-5680.
[2]Shopov S,Balteanu A,Hasch J,et al.A 234-261-GHz 55-nm Si Ge Bi CMOS signal source with 5.4~7.2d Bm output power,1.3%DC-to-RF efficiency,and 1-GHz divided-down output[J].IEEE Journal of Solid-State Circuit,2016,51(9):2054-2065.
[3]Ha BW,Seo CW,Cho CS,et al.Wideband high-isolation SPDT RF switch in 0.18μm Si Ge Bi CMOS technology[J].Analog Integrated Circuit and Signal Processing,2016,87(1):11-19.
[4]Ulusoy A C,Kaynak M,Valenta V,et al.A 110 GHz LNA with 20d B gain and 4 d B noise figure in an 0.13μm Si Ge Bi CMOS technology[C]∥IEEE MTT-S Int.Dig.,2013:1-3.
[5]Liu G,Schumacher H.Broadband millimeter-wave LNAs(47–77GHz and 70–140 GHz)using a T-type matching topology[J].IEEE Journal Solid-State Circuits,2013,48(9):2022-2029.
[6]Jang S,Nguyen C.A high-gain power-efficient wideband V-band LNA in 0.18-μm Si Ge Bi CMOS[J].IEEE Microwave and Wireless Components Letters,2016,26(4):276-278.
[7]Fritsche D,Tretter G,Carta C,et al.Millimeter-wave low-noise amplifier design in 28-nm low-power digital CMOS[J].IEEE Transactions on Microwave Theory and Techniques,2015,63(6):1910-1922.
[8]Hu B,Xiao P,Lim W,et al.Analysis and design of ultra-wideband low-noise amplifier with input/output bandwidth optimization and single-ended/differential-input reconfigurability[J].IEEE Transactions on Industrial Electronics,2014,61(10):5672-5680.