银掺杂氧化亚铜薄膜的制备及其光电性能
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摘要
采用水热法以Cu片为基底,Cu(NO_3)_2为铜源,十二烷基苯磺酸钠(SDBS)为添加剂,通过调节Ag~+浓度,制备不同Ag掺杂Cu_2O(Ag/Cu_2O)薄膜。研究了样品的光电性能及电容-电压特性等,并用X射线衍射(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)对其晶体结构、形貌及组成进行了表征。结果表明,当体系中Ag~+浓度为0.03 mmol/L时,Ag/Cu_2O薄膜的光电性能最佳,光电压和光电流密度分别为0.458 5 V和3.011 mA·cm~(-2),比Cu_2O薄膜分别提高了0.205 1 V和1.359 mA·cm~(-2);Ag/Cu_2O薄膜的载流子浓度达到3.10×10~(20) cm~(-3),比Cu_2O薄膜提高了2.38×10~(20) cm~(-3)。XRD,SEM和EDS结果显示,Ag/Cu_2O薄膜的结晶性比Cu_2O薄膜好,但其粒径有所增大,Ag/Cu_2O薄膜中Ag元素的原子数分数为0.13%。
Using hydrothermal method,the Ag-doped Cu_2O(Ag/Cu_2O) film was prepared by adjusting the Ag~+ concentration, with Cu films as the substrate, Cu(NO_3)_2 as the copper source, and sodium dodecyl benzene sulfonate(SDBS) as the additive. The photoelectric properties and capacitance-voltage characteristics of the samples were studied. And the crystal structure, morphology and composition were characterized by the X-ray diffraction(XRD), scanning transmission electron microscopy(SEM)and energy dispersive spectroscopy(EDS). The results show that the Ag/Cu_2O film has the best photo-electric property when the Ag~+ concentration in the system is 0.03 mmol/L. The photovoltage and photocurrent densities were 0.458 5 V and 3.011 mA·cm~(-2), respectively, which were 0.205 1 V and 1.359 mA·cm~(-2) higher than those of the Cu_2O film. The carrier concentration of the Ag/Cu_2O film was 3.10×10~(20) cm~(-3), and the concentration of the Ag/Cu_2O film was 2.38×10~(20) cm~(-3) higher than that of the Cu_2O film. The results of the XRD, SEM and EDS show that the crystallinity of the Ag/Cu_2O film is better than that of the Cu_2O film, and the particle size of Ag/Cu_2O is increased. The atom fraction of Ag element in Ag/Cu_2O film is 0.13%.
Using hydrothermal method,the Ag-doped Cu_2O(Ag/Cu_2O) film was prepared by adjusting the Ag~+ concentration, with Cu films as the substrate, Cu(NO_3)_2 as the copper source, and sodium dodecyl benzene sulfonate(SDBS) as the additive. The photoelectric properties and capacitance-voltage characteristics of the samples were studied. And the crystal structure, morphology and composition were characterized by the X-ray diffraction(XRD), scanning transmission electron microscopy(SEM)and energy dispersive spectroscopy(EDS). The results show that the Ag/Cu_2O film has the best photo-electric property when the Ag~+ concentration in the system is 0.03 mmol/L. The photovoltage and photocurrent densities were 0.458 5 V and 3.011 mA·cm~(-2), respectively, which were 0.205 1 V and 1.359 mA·cm~(-2) higher than those of the Cu_2O film. The carrier concentration of the Ag/Cu_2O film was 3.10×10~(20) cm~(-3), and the concentration of the Ag/Cu_2O film was 2.38×10~(20) cm~(-3) higher than that of the Cu_2O film. The results of the XRD, SEM and EDS show that the crystallinity of the Ag/Cu_2O film is better than that of the Cu_2O film, and the particle size of Ag/Cu_2O is increased. The atom fraction of Ag element in Ag/Cu_2O film is 0.13%.
引文
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[5]PANG H,GAO F,LU Q.Morphology effect on antibacterial activity of cuprous oxide[J].Chemical Communications,2009,9(9):1076-1078.
[6]AKL A A,MAHMOUD S A,AL-SHOMAR S M,et al.Improving microstructural properties and minimizing crystal imperfections of nanocrystalline Cu2O thin films of different solution molarities for solar cell applications[J].Materials Science in Semiconductor Processing,2018,74C:183-192.
[7]简蓝,万霞,铁绍龙.Cu2O/Ag复合催化剂的合成及红外光激发下的光催化性能研究[J].华南师范大学学报(自然科学版),2015,47(5):44-49.JIAN L,WAN X,TIE S L.Synthesis of Cu2O/Ag composite catalysts and their photocatalytic property under infrared light irradiation[J].Journal of South China Normal University(Natural Science Edition),2015,47(5):44-49(in Chinese).
[8]LEE Y S,HEO J,WINKLER M T,et al.Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thinfilm solar cells[J].Journal of Materials Chemistry:A,2013,1(48):15416-15422.
[9]YOO J J,YU J,SONG J Y,et al.Single-walled carbon nanotubes as a dopant in p-type cuprous oxide films[J].Carbon,2011,49(8):2659-2664.
[10]RESENDE J,JIMENEZ C,NGUYENG N D,et al.Magnesium-doped cuprous oxide(Mg∶Cu2O)thin films as a transparent p-type semiconductor[J].Physica Status Solidi,2016,213(9):2296-2302.
[11]JIANG Y Y,LI Y,WANG D Y,et al.Photovoltaic performance of an alternating cold-hot method deposited Cd Se thin films[J].Micro&Nano Letters,2017,12(6):391-395.
[12]FATTAH-ALHOSSEINI A.Passivity of AISI 321stainless steel in 0.5 M H2SO4,solution studied by Mott-Schottky analysis in conjunction with the point defect model[J].Arabian Journal of Chemistry,2016,9(7):S1342-S1348.
[13]ZHANG Z H,WANG P.Highly stable copper oxide composite as an effective photocathode for water splitting via a facile electrochemical synthesis strategy[J].Journal of Materials Chemistry,2012,22(6):2456-2464.
[14]庄朋强,肖占文,朱向东,等钽阳极氧化膜的半导体性研究[J].电子元件与材料,2011,30(8):35-39.ZHUANG P Q,XIAO Z W,ZHU X D.et al.Study on semiconductor properties of anodic oxide films on tantalum[J].Electronic Components and Materials,2011,30(8):35-39(in Chinese).
[15]YUAN W Y,YUAN J,XIE J L,et al.Polymermediated self-assembly of Ti O2@Cu2O core-shell nanowire array for highly efficient photoelectrochemical water oxidation[J].ACS Applied Materials&Interfaces,2016,8(9):6082-6092.
[16]钟福新,余彩莉,刘铮.大学化学[M].北京:清华大学出版社,2012:112-113