反铁磁状态层状Co基复合氧化物Ca_2Co_2O_5电子学性质的研究
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  • 英文篇名:Investigation of electronic properties of anti-ferromagnetic state Co-based layered Ca_2Co_2O_5 compound oxide
  • 作者:张飞鹏 ; 张久兴 ; 施加利 ; 张静文 ; 杜玲枝 ; 张坤书 ; 李辉 ; 王朝勇
  • 英文作者:ZHANG Feipeng;ZHANG Jiuxing;SHI Jiali;ZHANG Jingwen;DU Lingzhi;ZHANG Kunshu;LI Hui;WANG Chaoyong;Henan Provincial Engineering Laboratory of Building-Photovoltaics,School of Mathematics and Physics,Henan University of Urban Construction;School of Materials Sciences and Engineering,Shijiazhuang Tiedao University;Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices,College of Materials Science and Engineering,Hefei University of Technology;
  • 关键词:光电子学 ; 材料 ; Ca_2Co_2O_5 ; 反铁磁态 ; 电子学性质
  • 英文关键词:optoelectronics;;materials;;Ca_2Co_2O_5;;anti-ferromagnetic;;electronical properties
  • 中文刊名:LDXU
  • 英文刊名:Chinese Journal of Quantum Electronics
  • 机构:河南城建学院数理学院建筑光伏一体化技术河南省工程实验室;石家庄铁道大学材料科学与工程学院;合肥工业大学材料科学与工程学院新型功能材料与器件安徽省重点实验室;
  • 出版日期:2019-05-15
  • 出版单位:量子电子学报
  • 年:2019
  • 期:v.36;No.188
  • 基金:国家自然科学基金,51572066;; 河南省自然科学基金,162300410007;; 河南省科技计划项目,132300410071~~
  • 语种:中文;
  • 页:LDXU201903019
  • 页数:7
  • CN:03
  • ISSN:34-1163/TN
  • 分类号:117-123
摘要
基于密度泛函理论方法分析研究了一种低自旋反铁磁状态Co基层状复合氧化物Ca_2Co_2O_5的电子学性质。结果表明,其能带中均包括5个子带,其中费米能级附近的能带中的能级数量较多,具有较宽的分布。向上自旋的电子形成半导体型能带,带宽为0.0112 eV,向下自旋的电子形成金属型能带。在费米能级附近,s、p、d电子对其态密度的贡献程度逐渐提高。CaCoO层对总态密度贡献较大,CoO层对总态密度贡献较小。Ca中电子主要在远离费米能的位置形成能带,Co中电子主要在费米能附近形成能带,O中电子主要在-19 eV和费米能形成能带,Co d电子和O p电子贡献这种反铁磁状态层状Co基复合氧化物Ca_2Co_2O_5的电子学性质。
        The electronical properties of a kind of anti-ferromagnetic Co-based layered compound oxide Ca_2 Co_2 O_5 are investigated by the density functional theory method. The results show that there are five sub-bands for spin up and down electrons, and there are many energy bands near Fermi energy which show wider allocation. The spin up electrons forms semiconductor type band structure with indirect band gap of 0.0112 eV, nevertheless the spin down electrons forms the metallic band structure. The contribution of s state electrons to density of states is the least, that of p state electrons is in the middle, while d state electrons contribute the most. The electrons of the CaCoO sub-layer contribute to the system much more than that of the electrons of CoO sub-layer. The Ca electrons contribute to density of state far from Fermi level,the Co electrons contribute to density of states near Fermi level, and the O electrons form bands near Fermi level as well as-19 eV. The Co d and O p electrons contribute to electronic properties of the anti-ferromagnetic Co-based layered oxide Ca_2 Co_2 O_5.
引文
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