基于MOSFET的高重复频率高压脉冲源设计
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摘要
设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)的高压脉冲电源。该发生器采用多只MOSFET的串联技术,形成高压、高重复频率开关组件。用高压开关组件开展脉冲发生器设计,搭建了一个15只1kV的高速MOSFET串联的脉冲发生器实验装置,在500Ω负载上获得前沿小于5ns、幅度大于10kV、脉宽约100ns,瞬态频率达400kHz的高压脉冲。设计的高压开关组件结构紧凑,可靠性高,可应用于多种脉冲发生器。
The paper presents a design of high voltage pulse generator based on metal oxide semiconductor field-effect transistor(MOSFET).The high voltage and high repetition rate switch module by stacking many MOSFET in series was investigated to generate high voltage pulse.A pulse generator was designed by the switch module.An experiment setup stacking 15 MOSFETs whose Vdsis 1 kV was set up in series.A high voltage pulse with amplitude of 10 kV on 500Ωload,duration of about 100 ns and repeat frequency of 400 kHz was obtained.Because of the fine characteristic of compact-structure and high reliability,the high voltage switch module could be used in many type of pulse generator.
The paper presents a design of high voltage pulse generator based on metal oxide semiconductor field-effect transistor(MOSFET).The high voltage and high repetition rate switch module by stacking many MOSFET in series was investigated to generate high voltage pulse.A pulse generator was designed by the switch module.An experiment setup stacking 15 MOSFETs whose Vdsis 1 kV was set up in series.A high voltage pulse with amplitude of 10 kV on 500Ωload,duration of about 100 ns and repeat frequency of 400 kHz was obtained.Because of the fine characteristic of compact-structure and high reliability,the high voltage switch module could be used in many type of pulse generator.
引文
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[7]陈静,周晓青.基于固态开关器件的新型高压脉冲驱动源[J].现代电子技术,2012,35(4):208-210.(Chen Jing,Zhou Xiaoqing.New highvoltage pulse driving source based on solid switch device.Modern Electronics Technique,2012,35(4):208-210)
[8]韩永林,梁伟,胡永宏.用金属氧化物半导体场效应晶体管器件实现的高重复率电光Q模块设计[J].中国激光,2006,33(10):1329-1332.(Han Yonglin,Liang Wei,Hu Yonghong.Design of high repetition rate electro-optically Q-switched module with vertical metal oxide semiconductor field effect transistor component.Chinese Journal of Lasers,2006,33(10):1329-1332)
[9]赵鑫,张乔根,白雁力,等.MOSFET在感应叠加型高压双方波脉冲发生装置中的应用[J].高电压技术,2015,41(12):4066-4072.(Zhao Xin,Zhang Qiaogen,Bai Yanli,et al.Application of MOSFET in high voltage double square-wave pulses generator with inductive adder configuration.High Voltage Engineering,2015,41(12):4066-4072)
[10]石小燕,丁恩燕,梁勤金,等.20kV/20kHz/100A高压脉冲源设计[J].强激光与粒子束,2018,30:045002.(Shi Xiaoyan,Din Enyan,Liang Qinjin,et al.Design of 20kV/20kHz/100 A high voltage pulse generator.High Power Laser and Particle Beams,2018,30:045002)
[2]Jiang W,Matsuda T,Yatsui K,et al.MHz pulsed power generator using MOSFET[C]//Power Modulator Symposium and High-Voltage Workshop.2002.
[3]Barnes M J,Wait G D.A 25-kV 75-kHz kicker for measurement of muon lifetime[J].IEEE Trans Plasma Science,2004,32(5):1932-1944.
[4]袁雪林,丁臻捷,俞建国,等.基于雪崩管Marx电路的高稳定度脉冲技术[J].强激光与粒子束,2010,22(4):757-760.(Yuan Xuelin,Ding Zhenjie,Yu Jianguo,et al.Research on high stability pulser based on avalanche transistor Marx circuit.High Power Laser and Particle Beams,2010,22(4):757-760)
[5]Ryoo H J,Gussev G,Jang S R.Development of 10kV,50A,50kHz high repetitive pulsed power modulator based on IGBT stacks[C]//Proceedings of IEEE International Power Modulators and High Voltage Conference.2008.
[6]朱会柱,汪秀,袁斌.基于MOS关的高频高压脉冲源中电磁兼容问题研究[J].电子技术,2011(3):34-36.(Zhu Huizhu,Wang Xiu,Yuan Bin.Investigation on the EMC in HF-HV pulse generator based on MOS switch.Electronics Design &Application,2011(3):34-36)
[7]陈静,周晓青.基于固态开关器件的新型高压脉冲驱动源[J].现代电子技术,2012,35(4):208-210.(Chen Jing,Zhou Xiaoqing.New highvoltage pulse driving source based on solid switch device.Modern Electronics Technique,2012,35(4):208-210)
[8]韩永林,梁伟,胡永宏.用金属氧化物半导体场效应晶体管器件实现的高重复率电光Q模块设计[J].中国激光,2006,33(10):1329-1332.(Han Yonglin,Liang Wei,Hu Yonghong.Design of high repetition rate electro-optically Q-switched module with vertical metal oxide semiconductor field effect transistor component.Chinese Journal of Lasers,2006,33(10):1329-1332)
[9]赵鑫,张乔根,白雁力,等.MOSFET在感应叠加型高压双方波脉冲发生装置中的应用[J].高电压技术,2015,41(12):4066-4072.(Zhao Xin,Zhang Qiaogen,Bai Yanli,et al.Application of MOSFET in high voltage double square-wave pulses generator with inductive adder configuration.High Voltage Engineering,2015,41(12):4066-4072)
[10]石小燕,丁恩燕,梁勤金,等.20kV/20kHz/100A高压脉冲源设计[J].强激光与粒子束,2018,30:045002.(Shi Xiaoyan,Din Enyan,Liang Qinjin,et al.Design of 20kV/20kHz/100 A high voltage pulse generator.High Power Laser and Particle Beams,2018,30:045002)