C波段高效率30W功率放大器研制
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摘要
随着第三代半导体GaN器件技术的不断发展,GaN高电子迁移率晶体管(HEMT)功率器件在电子系统中逐步得到了广泛应用。GaN功率器件具有工作效率高、功率密度大和击穿场强高的特点,非常适合用于大功率、连续波功率放大器设计。基于GaN功率器件大信号模型,采用Microwave Office 2009微波设计软件对功率放大器进行仿真优化,设计并研制出了C波段高效率30 W连续波功率放大器。该放大器功率器件采用了CREE公司C波段GaN HEMT功率器件,实现放大器尺寸为190 mm×50 mm×15 mm,端口阻抗为50Ω。放大器在5 650~5 950 MHz频带内、28 V工作条件下,连续波输出功率大于30 W,增益大于45 dB,效率大于30%。
With the development of the third generation semiconductor GaN devices technology, GaN high electron mobility transistor( HEMT) power devices are more and more widely applied in many electronic systems. The GaN power devices can be competitive candidates in continuous wave( CW) power amplification since they have the advantages of large output power density,high efficiency and high breakdown voltage. Based on the large signal model of GaN power devices and the power amplifier was simulated and optimized using microwave design software( Microwave Office 2009). The C-band high efficient 30 W microwave CW power amplifier was designed and manufactured. The amplifier in C-band was successfully developed by GaN HEMT power devices of CREE. Dimensions of the power amplifier are 190 mm × 50 mm × 15 mm. The input and output impedance of the power amplifier is 50 Ω. The amplifier can deliver continuous wave output power more than 30 W with 45 dB power gain and 30% efficiency under the condition of 28 V operation,in the range of 5 6505 950 MHz.
With the development of the third generation semiconductor GaN devices technology, GaN high electron mobility transistor( HEMT) power devices are more and more widely applied in many electronic systems. The GaN power devices can be competitive candidates in continuous wave( CW) power amplification since they have the advantages of large output power density,high efficiency and high breakdown voltage. Based on the large signal model of GaN power devices and the power amplifier was simulated and optimized using microwave design software( Microwave Office 2009). The C-band high efficient 30 W microwave CW power amplifier was designed and manufactured. The amplifier in C-band was successfully developed by GaN HEMT power devices of CREE. Dimensions of the power amplifier are 190 mm × 50 mm × 15 mm. The input and output impedance of the power amplifier is 50 Ω. The amplifier can deliver continuous wave output power more than 30 W with 45 dB power gain and 30% efficiency under the condition of 28 V operation,in the range of 5 6505 950 MHz.
引文
[1]余振坤,刘登宝.S波段宽带GaN芯片高功率放大器的应用研究[J].微波学报,2011,27(2):68-70.
[2]SAAD P,FAGER C,CAO H,et al.Design of a highly efficient 2-4 GHz octave bandwidth GaN HEMT power amplifier[J].IEEE Transactions on Microwave Theory and Techniques,2010,58(7):1677-1685.
[3]雷奇,何松柏,董磊.基于氮化镓特征的高效功率放大器拓扑设计[J].信息与电子工程,2011,6(5):569-572.
[4]YOU F,HE S,TANG X,et al.Performance study of a class E power amplifier with tunable series-parallel resonator network[J].IEEE Transactions on Microwave Theory and Techniques,2008,56(10):2190-2200.
[5]张肇仪,周乐柱,吴德明.微波工程[M].第3版.北京:电子工业出版社,2009:467-470.
[6]尤览,丁瑶,杨光,等.采用寄生补偿的高效率逆F类GaN HEMT功率放大器[J].微波学报,2011,27(5):50-54.
[2]SAAD P,FAGER C,CAO H,et al.Design of a highly efficient 2-4 GHz octave bandwidth GaN HEMT power amplifier[J].IEEE Transactions on Microwave Theory and Techniques,2010,58(7):1677-1685.
[3]雷奇,何松柏,董磊.基于氮化镓特征的高效功率放大器拓扑设计[J].信息与电子工程,2011,6(5):569-572.
[4]YOU F,HE S,TANG X,et al.Performance study of a class E power amplifier with tunable series-parallel resonator network[J].IEEE Transactions on Microwave Theory and Techniques,2008,56(10):2190-2200.
[5]张肇仪,周乐柱,吴德明.微波工程[M].第3版.北京:电子工业出版社,2009:467-470.
[6]尤览,丁瑶,杨光,等.采用寄生补偿的高效率逆F类GaN HEMT功率放大器[J].微波学报,2011,27(5):50-54.