关联电子材料的自旋态限域调控与自旋电子器件应用研究进展
|
摘要
关联电子材料具有丰富的自旋序,包括铁磁、反铁磁、亚铁磁、螺旋磁序等,这些自旋序与电子轨道态、电荷空间分布等其他量子态存在强烈耦合,因而可以通过外场来实现不同自旋序的时域和空域调控。相对于存在化学界面的传统异质结构,在关联电子材料中利用外场限域调控,可以实现无化学界面的不同自旋序结构的空间可控排列,从而构筑基于同一材料的新型自旋电子器件。本项目围绕关联电子体系多量子态的调控规律展开,通过自旋电子学与量子物理、表面物理以及电介质物理的交叉,探索具有多场(磁场、电场、光场、应变场)可控性的新型关联自旋电子材料,发展新型的多场调控技术,揭示自旋序与量子态耦合机理,设计新型自旋电子器件,进而实现在同一关联电子材料中集成非挥发性自旋存储与逻辑运算功能。
The correlated electronic materials can display various spin orders including ferromagnetic order, antiferromagnetic order, ferrimagnetic order and heli-magnetic order, which are strongly coupled with charge, orbital and lattice degrees of freedom. As a result, the spin ordering properties in correlated electronic materials are very sensitive to external tuning fields. Compared with the traditional heterostructures built on chemical interfaces, the use of correlated electronic materials with spatial confinement can offers a new way to realize the spatial controllable arrangement of different spin structures without chemical interfaces, which is useful for fabricating spintronic device based on the same material. In this work, we studied a new type of spintronic material that can be controlled by multiple tuning fields such as magnetic field, electric field, light field and strain field. Through the investigation of the coupling mechanism between spin order and various quantum states, we developed new multiple-tuning-field techniques and designed new spintronic devices which can realize the integration of non-volatile multibit memory and logical operation functions in the same correlated electronic materials.
The correlated electronic materials can display various spin orders including ferromagnetic order, antiferromagnetic order, ferrimagnetic order and heli-magnetic order, which are strongly coupled with charge, orbital and lattice degrees of freedom. As a result, the spin ordering properties in correlated electronic materials are very sensitive to external tuning fields. Compared with the traditional heterostructures built on chemical interfaces, the use of correlated electronic materials with spatial confinement can offers a new way to realize the spatial controllable arrangement of different spin structures without chemical interfaces, which is useful for fabricating spintronic device based on the same material. In this work, we studied a new type of spintronic material that can be controlled by multiple tuning fields such as magnetic field, electric field, light field and strain field. Through the investigation of the coupling mechanism between spin order and various quantum states, we developed new multiple-tuning-field techniques and designed new spintronic devices which can realize the integration of non-volatile multibit memory and logical operation functions in the same correlated electronic materials.
引文
[1] Zhai K,Wu Y,Shen S P,et al.Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites [J].Nature Comm,2017,8:519
[2] Shen S P,Liu X Z,Chai Y S,et al.Hidden spin-order-induced room-temperature ferroelectricity in a peculiar conical magnetic structure [J].Phys.Rev.B,2017,95:094405
[3] Chang Y F,Zhai K,Chai Y S,et al.Room-temperature magnetoelectric effects in multiferroic Y-type hexaferrites [J].J.Phys.D:Appl.Phys,2018,51:264002,
[4] Shen J X,Cong J Z,Chai Y S,et al.Nonvolatile memory based on nonlinear magnetoelectric effects [J].Phys.Rev.Applied,2016,6:021001
[5] Shen J X,Shang D S,Chai Y S,et al.Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb (Mg 1/3 Nb 2/3) O 3] 0.7 [PbTiO 3] 0.3/Ni Heterostructure [J].Phys.Rev.Applied,2016,6:064028
[6] Shen J X,Cong J Z,Shang D S,et al.A multilevel nonvolatile magnetoelectric memory [J].Sci.Rep,2016:34473
[7] Lu P P,Shang D S,Shen J X,et al.Nonvolatile transtance change random access memory based on magnetoelectric P (VDF-TrFE)/Metglas heterostructures [J].Appl.Phys.Lett,2016,109:252902
[8] Shen J X,Shang D S,Chai Y S,et al.Mimicking Synaptic Plasticity and Neural Network Using Memtranstors [J].Adv.Mater,2018,30:1706717
[9] Zhai K,Shang D S,Chai Y S,et al.Room-Temperature Nonvolatile Memory Based on a Single-Phase Multiferroic Hexaferrite [J].Adv.Fun.Mater,2018,29:1705771
[10] Lan Q Q,Zhang X J,Shen X,et al.Tuning the magnetism of epitaxial cobalt oxide thin films by electron beam irradiation [J].Physical Review Materials,2017,1:024403
[11] Zhu Y Y,Du K,Niu J B,et al.Chemical ordering suppresses large-scale electronic phase separation in doped manganites [J].Nature Comm,2016,7:11260
[12] Yue D,Lin W W,Li J J,et al.Spin-to-Charge Conversion in Bi Films and Bi / Ag Bilayers [J].Phys.Rev.Lett,2018,121:037201
[2] Shen S P,Liu X Z,Chai Y S,et al.Hidden spin-order-induced room-temperature ferroelectricity in a peculiar conical magnetic structure [J].Phys.Rev.B,2017,95:094405
[3] Chang Y F,Zhai K,Chai Y S,et al.Room-temperature magnetoelectric effects in multiferroic Y-type hexaferrites [J].J.Phys.D:Appl.Phys,2018,51:264002,
[4] Shen J X,Cong J Z,Chai Y S,et al.Nonvolatile memory based on nonlinear magnetoelectric effects [J].Phys.Rev.Applied,2016,6:021001
[5] Shen J X,Shang D S,Chai Y S,et al.Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb (Mg 1/3 Nb 2/3) O 3] 0.7 [PbTiO 3] 0.3/Ni Heterostructure [J].Phys.Rev.Applied,2016,6:064028
[6] Shen J X,Cong J Z,Shang D S,et al.A multilevel nonvolatile magnetoelectric memory [J].Sci.Rep,2016:34473
[7] Lu P P,Shang D S,Shen J X,et al.Nonvolatile transtance change random access memory based on magnetoelectric P (VDF-TrFE)/Metglas heterostructures [J].Appl.Phys.Lett,2016,109:252902
[8] Shen J X,Shang D S,Chai Y S,et al.Mimicking Synaptic Plasticity and Neural Network Using Memtranstors [J].Adv.Mater,2018,30:1706717
[9] Zhai K,Shang D S,Chai Y S,et al.Room-Temperature Nonvolatile Memory Based on a Single-Phase Multiferroic Hexaferrite [J].Adv.Fun.Mater,2018,29:1705771
[10] Lan Q Q,Zhang X J,Shen X,et al.Tuning the magnetism of epitaxial cobalt oxide thin films by electron beam irradiation [J].Physical Review Materials,2017,1:024403
[11] Zhu Y Y,Du K,Niu J B,et al.Chemical ordering suppresses large-scale electronic phase separation in doped manganites [J].Nature Comm,2016,7:11260
[12] Yue D,Lin W W,Li J J,et al.Spin-to-Charge Conversion in Bi Films and Bi / Ag Bilayers [J].Phys.Rev.Lett,2018,121:037201