利用有机磁效应探究基于DCJTB电荷转移态发光器件的微观机制
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  • 英文篇名:Understanding the mechanisms of light emission from DCJTB charge-transfer states in OLEDs using organic magnetic field effects
  • 作者:许静 ; 汤仙童 ; 邓金秋 ; 潘睿亨 ; 屈芬兰 ; 赵茜 ; 熊祖洪
  • 英文作者:Jing Xu;Xiantong Tang;Jinqiu Deng;Ruiheng Pan;Fenlan Qu;Xi Zhao;Zuhong Xiong;School of Physical Science and Technology,Southwest University;
  • 关键词:电荷转移态 ; 磁电致发光 ; 能量转移 ; 电荷捕获 ; 微观过程
  • 英文关键词:charge transfer state;;magneto-electroluminescence;;energy transfer;;charge trapping;;micro-mechanism
  • 中文刊名:KXTB
  • 英文刊名:Chinese Science Bulletin
  • 机构:西南大学物理科学与技术学院;
  • 出版日期:2019-01-30 17:08
  • 出版单位:科学通报
  • 年:2019
  • 期:v.64
  • 基金:国家自然科学基金(11874305)资助项目
  • 语种:中文;
  • 页:KXTB201907006
  • 页数:11
  • CN:07
  • ISSN:11-1784/N
  • 分类号:68-78
摘要
能量转移(energy transfer,ET)和直接电荷捕获(direct charge trapping,DCT)是掺杂型有机发光二极管(organic light-emitting diode,OLED)中两种相互竞争的微观过程.最近研究表明,磁电致发光(magnetoelectroluminescence,MEL)可作为探测OLED中微观机制的有效手段.本文以电荷转移(charge transfer,CT)态材料4-(二氰基亚甲基)-2-叔丁基-6-(1,1,7,7-四甲基久罗尼定基-4-乙烯基)-4H-吡喃(4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran,DCJTB)为客体,以具有不同三重态激子能量的三(8-羟基喹啉)铝、4,4-二(9-咔唑)联苯(4,4′-bis(N-carbazolyl)-1,1′-biphenyl,CBP)和2,4,6-三[3-(二苯基膦氧基)苯基]-1,3,5-三唑(2,4,6-tris[3-(diphenylphosphinyl)phenyl]-1,3,5-triazine,PO-T2T)为主体制备了3种OLED,并测量了它们的MEL.实验发现器件的MEL都由低场(|B|<5 mT)和高场(5 mT≤|B|<300 mT)两部分组成,其高场部分均表现为由三重态激子-电荷反应和三重态激子对湮灭导致的随磁场正相关或负相关的MEL.但它们的低场变化则完全不同:Alq3:DCJTB器件表现为主体极化子对(polaron-pair,PP)的系间窜越过程(PPT)导致的正MEL,而CBP:DCJTB器件和PO-T2T:DCJTB器件则表现为客体电荷转移态的反向系间窜越过程导致的负MEL.这两类器件分别对应ET和DCT过程,再加之主体三重态能级的高低对反向系间窜越过程的影响,从而导致不同器件中多变的MEL线型;另外,低温环境更有利于DCJTB中三重电荷转移态参与的反向系间窜越和三重态激子对湮灭过程的发生.本研究工作对基于DCJTB发光器件的内部微观机制有了更深入的理解.
        Although energy transfer(ET) and direct charge trapping(DCT) are two competing mechanisms that are known to occur in dye-doped organic light-emitting diodes(OLEDs), which of these processes governs the electroluminescence is not clear. Additionally, each process influences the formation of excitons, and the interactions between excitons, differently. If ET is the dominate process, the mechanism that governs an OLED involves both the host and guest materials. In contrast, if DCT is the dominant process, the mechanism that governs an OLED will only involve the guest material. Magneto-electroluminescence(MEL) is an effective technique for exploring and understanding the mechanisms that occur within OLEDs. It exhibits sensitive fingerprint responses to intersystem crossing(ISC), reverse intersystem crossing(RISC), triplet-triplet annihilation(TTA) and triplet-charge annihilation(TQA). In this work, we fabricated three different OLEDs and measured their MEL curves. Tris-8-hydroxyquinoline aluminum(Alq3), 4,4′-N,N′-dicarbazolebiphenyl(CBP) and 2,4,6-tris[3-(diphenylphosphinyl)phenyl]-1,3,5-triazine(PO-T2T) were used as the host materials, each of which had a different triplet exciton energy. 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4 H-pyran(DCJTB) was used as a charge-transfer(CT) dopant that had a small energy difference between the singlet and triplet excited states. By analyzing the energy level structure of the different devices, the absorption spectrum of the dopant, and the emission spectra of the host materials, we determined that ET was the dominant process when DCJTB was used as a dopant with Alq3. However, DCT dominated when DCJTB was used as a dopant with both CBP and PO-T2T. The current-and temperature-dependent MEL curves from all devices were composed of low field components(|B|<5 m T) and high field components(5 mT≤|B|<300 mT). The high field components of the MEL curves exhibited a positive or negative correlation with B because both TTA and TQA were competing processes, but their low-field changes were completely different. The MEL curves from the DCJTB/Alq3 device exhibited a positive MEL because polaron-pair(PP) states can occur on the host material via ISC(PPS→PPT). Conversely, the DCJTB/CBP and DCJTB/PO-T2T devices exhibited negative MEL responses because RISC(1 CT←3 CT) occurred in the CT states of the dopant. However, the triplet energy levels of the host material simultaneously impacted RISC. Hence, these devices exhibited a diverse range of MEL curves. Low temperatures enhanced RISC and TTA of the triple CT state within DCJTB, which was attributed to the increased concentration and lifetime of triplet excitons at low temperature. This work serves as a reference for improving the internal quantum efficiency of fluorescent OLEDs by enhancing the use of triplet states, and importantly gives a deeper understanding of the mechanisms that govern light-emission from devices that incorporate DCJTB CT materials.
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