蓝宝石的焊接方法研究现状
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摘要
针对目前的研究较为偏重蓝宝石焊接的工艺效果,在蓝宝石/焊接材料界面结合机理和反应动力学方面的研究仍不够深入的问题。综述了蓝宝石焊接过程中的界面结合和热应力两个核心问题。蓝宝石具有较高的化学惰性,不易与焊缝填充材料发生扩散和化学反应,导致界面结合问题。蓝宝石的热膨胀系数较低,与焊缝填充材料的热膨胀系数可能具有较大差异,在焊接的热循环中会导致加大的热应力。归纳与总结了三种主要焊接方法,即陶瓷粉末烧结连接、扩散焊和钎焊,焊接过程中蓝宝石与焊接材料的反应原理、界面结合过程和接头强度,提出目前研究中所存在的主要问题及建议未来应关注的内容,希望对该领域的研究及应用提供参考。
Aiming at that current research in welding and joining of sapphire mainly focuses on the processing effectiveness,and that the sapphire/metal interface bonding mechanism and reaction dynamics have not been sufficiently investigated,two main concerns of interfacial bonding and thermal stresses are reviewed. Because of sapphire's chemical inertia,diffusion and reaction between sapphire and weld seam filler materials is very difficult to achieve,which leads to interfacial bonding problems. And because coefficient of thermal expansion of sapphire is relatively low,which can be different from the filler materials,significant thermal stress can be produced in the joints. Three mainstream methods for sapphire welding,i. e. ceramics powder sintering,diffusion bonding and brazing,are reviewed. The reaction mechanism,bonding process and mechanical properties of the sapphire joints are summarized. Noticeable issues and aspects that shall be concerned in the future is proposed. It is expected to provide a valuable reference for the fundamental research and engineering applications in this field.
Aiming at that current research in welding and joining of sapphire mainly focuses on the processing effectiveness,and that the sapphire/metal interface bonding mechanism and reaction dynamics have not been sufficiently investigated,two main concerns of interfacial bonding and thermal stresses are reviewed. Because of sapphire's chemical inertia,diffusion and reaction between sapphire and weld seam filler materials is very difficult to achieve,which leads to interfacial bonding problems. And because coefficient of thermal expansion of sapphire is relatively low,which can be different from the filler materials,significant thermal stress can be produced in the joints. Three mainstream methods for sapphire welding,i. e. ceramics powder sintering,diffusion bonding and brazing,are reviewed. The reaction mechanism,bonding process and mechanical properties of the sapphire joints are summarized. Noticeable issues and aspects that shall be concerned in the future is proposed. It is expected to provide a valuable reference for the fundamental research and engineering applications in this field.
引文
[1]Dobrovinskaya E R,Lytvynov L A,Pishchik V.Sapphire:material,manufacturing,applications[M].Springer,New York,USA,2009:95-205.
[2]Xie J,Ling W J.High power mode-locked picosecond Ti:sapphire laser based on fast SESAM[J].Laser Journal,2017,38(7):10-12.
[3]Gürel K,Wittwer V J,Hakobyan S,et al.Carrier envelope offset frequency detection and stabilization of a diodepumped mode-locked Ti:sapphire laser[J].Optics Letters,2017,42(6):1035-1038.
[4]Drozhzhin O A,Tereshchenko I V,Emerich H,et al.An electrochemical cell with sapphire windows for operando synchrotron X-ray powder diffraction and spectroscopy studies of high-power and high-voltage electrodes for metal-ion batteries[J].Journal of Synchrotron Radiation,2018,25(2):468-472.
[5]Lin Z Q,Wang G G,Tian J L,et al.Broad-band anti-reflective pore-like sub-wavelength surface nanostructures on sapphire for optical windows[J].Nanotechnology,2018,29(5):1-10.
[6]Liu S,Wang Z P,Cui W,et al.Sealing of sapphire infrared windows by ultrasonic interfacial deposition soldering[J].Advanced Materials Research,2014,941-944:2074-2078.
[7]Horng R H,Chiang C C,Hsiao H Y,et al.Improved thermal management of Ga N/sapphire light-emitting diodes embedded in reflective heat spreaders[J].Applied Physics Letters,2008,93(11):310-313.
[8]Sarkisyan D,Sarkisyan A S,Guéna J,et al.Alkali-vapor cell with metal coated windows for efficient application of an electric field[J].Review of Scientific Instruments,2005,76(5):87-92.
[9]吕汉雄.蓝宝石生长方法和晶向对晶体质量与性能影响规律研究[D].哈尔滨:哈尔滨工业大学硕士学位论文,2017.
[10]殷胜昔,楚建新.蓝宝石整流罩与金属弹体新型的连接方法研究[J].航空精密制造技术,2010,46(1):54-57.
[11]Scott C,Tran V B.Diffusion bonding of ceramics[J].A-merican Ceramic Society Bulletin,1985,64:1129-1131.
[12]Pazol B G,McGuire P,Gentilman R L,et al.Large area flat and curved sapphire window blanks[C].Inorganic Optical MaterialsⅡ,San Diego,USA,2000:52-58.
[13]Dillon S J,Harmer M P.Mechanism of“solid-state”singlecrystal conversion in alumina[J].Journal of the American Ceramic Society,2007,90(3):993-995.
[14]Sandhage K H,Yurek G J.Indirect dissolution of sapphire into calcia magnesia alumina silica melts electron microprobe analysis of the dissolution process[J].Journal of the American Ceramic Society,1990,73(12):3643-3649.
[15]上媛媛.扩散连接单晶!-Al2O3工艺的研究[D].哈尔滨:哈尔滨工业大学硕士学位论文,2009.
[16]赵德才.蓝宝石连接性能研究[D].哈尔滨:哈尔滨工业大学硕士学位论文,2005.
[17]Fiore D F.High strength diffusion bonding of sapphire[D].Doctorial thesis of Worcester Polytechnic Institute,Worcester,USA,2002:95-135.
[18]Fujitsu S,Ono S,Nomura H,et al.Joining of single-crystal sapphire to alumina using silicate glasses[J].Journal of the Ceramic Society of Japan,2003,111(7):448-451.
[19]Zhang L Y,Xing D W,Sun J F,et al.Bonding layer microstructures and mechanical behavior of sapphire/sapphire joints diffusion-bonded using MgO-Al2O3-Si O2interlayer[J].International Journal of Applied Ceramic Technology,2011,8(5):1183-1191.
[20]Cao J,Li C,Song X G,et al.Microstructure evolution of alumina/alumina joint bonded by boron oxide-alumina nonmetal powder interlayer[J].International Journal of Applied Ceramic Technology,2015,12(3):652-657.
[21]Guo W,Lin T S,He P,et al.Microstructure and characterization of interfacial phases of sapphire/sapphire joint bonded using Bi2O3-B2O3-Zn O glass[J].Journal of the European Ceramic Society,2017,37(3):1073-1081.
[22]D9hler F,Zscheckel T,Kasch S,et al.A glass in the Ca O/MgO/Al2O3/Si O2system for the rapid laser sealing of alumina[J].Ceramics International,2017,43(5):4302-4308.
[23]Pablos-Martin A D,Tismer S,Benndorf G,et al.Laser soldering of sapphire substrates using a Ba Ti Al6O12thin-film glass sealant[J].Optics&Laser Technology,2016,81:153-161.
[24]Ning X S,Lin Y B,Xu W,et al.Development of a directly bonded aluminum/alumina power electronic substrate[J].Materials Science and Engineering B,2003,99(1-3):479-482.
[25]Montesa C M,Shibata N,Choi S Y,et al.High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces[J].Materials Transactions,2009,50(5):1037-1040.
[26]Suganuma K,Saiz E,Tomsia A P.Microstructure and strength of interface between pure aluminum and alpha-alumina[J].Journal of the Japan Institute of Metals,1998,62(1):92-97.
[27]Saiz E,Tomsia A P,Suganuma K.Wetting and strength issues at Al/alpha-alumina interfaces[J].Journal of the European Ceramic Society,2003,23(15):2787-2796.
[28]Ott J P,Michal G M,Chottiner G S.Shear-strength of aluminum-sapphire interfaces[J].Materials Letters,1989,8(11-12):481-485.
[29]Akatsu T,Sasaki G,Hosoda N,et al.Microstructure and strength of Al-sapphire interface by means of the surface activated bonding method[J].Journal of Materials Research,1997,12(3):852-856.
[30]Park Y J,Enoki M,Suga T,et al.Relation between plasticity of al and bonded area fraction in Al/sapphire joint fabricated by SAB[J].Journal of the Japan Institute of Metals,1999,63(12):1485-1489.
[31]Sinnott S B,Dickey E C.Ceramic/metal interface structures and their relationship to atomic and meso scale properties[J].Materials Science and Engineering R,2003,43(1-2):1-59.
[32]Ernst F.Metal-oxide interfaces[J].Materials Science&Engineering R,1995,14(3):97-156.
[33]Scheu C,Liu Y,Oh S H,et al.Interface structure and strain development during compression tests of Al2O3/Nb/Al2O3sandwiches[J].Journal of Materials Science,2006,41(23):7798-7807.
[34]Soyez G,Elssner G,Ruhle M,et al.Crack formation in sapphire/niobium/sapphire joints under compression[J].Journal of Materials Science,2000,35(5):1087-1096.
[35]Hong S M,Bartlow C C,Reynolds T B,et al.Ultrarapid transient-liquid-phase bonding of Al2O3ceramics[J].Advanced Materials,2008,20(24):4799-4801.
[36]Marks R A,Chapman D R,Danielson D T,et al.Joining of alumina via copper/niobium/copper interlayers[J].Acta Materialia,2000,48(18-19):4425-4438.
[37]Saiz E,Cannon R M,Tomsia A P.Reactive spreading:adsorption,ridging and compound formation[J].Acta Materialia,2000,48(18-19):4449-4462.
[38]Durov O V,Krasovskyy V P.In situ observation of Ag-CuTi liquid alloy/solid oxide interfaces[J].Materials Science and Engineering A,2008,495(1-2):164-167.
[39]Stephens J J,Hosking F M,Headley T J,et al.Reaction layers and mechanisms for a Ti-activated braze on sapphire[J].Metallurgical and Materials Transactions A,2003,34(12):2963-2972.
[40]Kozlova O,Voytovych R,Eustathopoulos N.Initial stages of wetting of alumina by reactive Cu-Ag-Ti alloys[J].Scripta Materialia,2011,65(1):13-16.
[41]Chang S Y,Chuang T H,Yang C L.Low temperature bonding of alumina/alumina and alumina/copper in air using Sn3.5Ag4Ti(Ce,Ga)filler[J].Journal of Electronic Materials,2007,36(9):1193-1198.
[42]Koleňák R,Chachula M,?ebo P,et al.Wettability and shear strength of active Sn2Ti solder on Al2O3ceramics[J].Soldering&Surface Mount Technology,2011,23(4):224-228.
[43]Naka M,Maeda M.Ultrasonic brazing of alumina to copper using Zn-Al-Cu fillers[J].Transactions of J W R I,1991,20(3):91-96.
[44]Kolenak R,Zubor P.Soldering of ceramic materials using ultrasonic energy[J].Welding in the World,2005:546-553.
[45]Kolenak R,Ebo P,Provaznik M,et al.Shear strength and wettability of active Sn3.5Ag4Ti(Ce,Ga)solder on Al2O3ceramics[J].Materials and Design,2011,32(7):3997-4003.
[46]Cui W,Wang C W,Yan J C,et al.Wetting and reaction promoted by ultrasound between sapphire and liquid Al-12Si alloy[J].Ultrasonics Sonochemistry,2013,20(1):196-201.
[47]Cui W,Yan J C,Dai Y,et al.Building a nano-crystalline alpha-alumina layer at a liquid metal/sapphire interface by ultrasound[J].Ultrasonics Sonochemistry,2015,22:108-112.
[48]Cui W,Li S Q,Yan J C,et al.Microstructure and mechanical performance of composite joints of sapphire by ultrasonic-assisted brazing[J].Journal of Materials Processing Technology,2018,257:1-6.
[49]Cui W,Li S Q,Yan J C,et al.Ultrasonic-assisted brazing of sapphire with high strength Al-4.5Cu-1.5Mg alloy[J].Ceramics International,2015,41(6):8014-8022.
[50]Zheng J W,Gao D M,Qiao L,et al.Influence of the Cu2Omorphology on the metallization of Al2O3ceramics[J].Surface&Coatings Technology,2016,285:249-254.
[51]齐立君,陆艳杰,张小勇,等.蓝宝石钨金属化层显微分析[J].真空电子技术,2015(4):23-27.
[52]Xin C L,Liu W B,Li N,et al.Metallization of Al2O3ceramic by magnetron sputtering Ti/Mo bilayer thin films for robust brazing to Kovar alloy[J].Ceramics International,2016,42(8):9599-9604.
[53]Donner K-R,Gaertner F,Klassen T.Metallization of thin Al2O3layers in power electronics using cold gas spraying[J].Journal of Thermal Spray Technology,2011,20(1-2):299-306.
[2]Xie J,Ling W J.High power mode-locked picosecond Ti:sapphire laser based on fast SESAM[J].Laser Journal,2017,38(7):10-12.
[3]Gürel K,Wittwer V J,Hakobyan S,et al.Carrier envelope offset frequency detection and stabilization of a diodepumped mode-locked Ti:sapphire laser[J].Optics Letters,2017,42(6):1035-1038.
[4]Drozhzhin O A,Tereshchenko I V,Emerich H,et al.An electrochemical cell with sapphire windows for operando synchrotron X-ray powder diffraction and spectroscopy studies of high-power and high-voltage electrodes for metal-ion batteries[J].Journal of Synchrotron Radiation,2018,25(2):468-472.
[5]Lin Z Q,Wang G G,Tian J L,et al.Broad-band anti-reflective pore-like sub-wavelength surface nanostructures on sapphire for optical windows[J].Nanotechnology,2018,29(5):1-10.
[6]Liu S,Wang Z P,Cui W,et al.Sealing of sapphire infrared windows by ultrasonic interfacial deposition soldering[J].Advanced Materials Research,2014,941-944:2074-2078.
[7]Horng R H,Chiang C C,Hsiao H Y,et al.Improved thermal management of Ga N/sapphire light-emitting diodes embedded in reflective heat spreaders[J].Applied Physics Letters,2008,93(11):310-313.
[8]Sarkisyan D,Sarkisyan A S,Guéna J,et al.Alkali-vapor cell with metal coated windows for efficient application of an electric field[J].Review of Scientific Instruments,2005,76(5):87-92.
[9]吕汉雄.蓝宝石生长方法和晶向对晶体质量与性能影响规律研究[D].哈尔滨:哈尔滨工业大学硕士学位论文,2017.
[10]殷胜昔,楚建新.蓝宝石整流罩与金属弹体新型的连接方法研究[J].航空精密制造技术,2010,46(1):54-57.
[11]Scott C,Tran V B.Diffusion bonding of ceramics[J].A-merican Ceramic Society Bulletin,1985,64:1129-1131.
[12]Pazol B G,McGuire P,Gentilman R L,et al.Large area flat and curved sapphire window blanks[C].Inorganic Optical MaterialsⅡ,San Diego,USA,2000:52-58.
[13]Dillon S J,Harmer M P.Mechanism of“solid-state”singlecrystal conversion in alumina[J].Journal of the American Ceramic Society,2007,90(3):993-995.
[14]Sandhage K H,Yurek G J.Indirect dissolution of sapphire into calcia magnesia alumina silica melts electron microprobe analysis of the dissolution process[J].Journal of the American Ceramic Society,1990,73(12):3643-3649.
[15]上媛媛.扩散连接单晶!-Al2O3工艺的研究[D].哈尔滨:哈尔滨工业大学硕士学位论文,2009.
[16]赵德才.蓝宝石连接性能研究[D].哈尔滨:哈尔滨工业大学硕士学位论文,2005.
[17]Fiore D F.High strength diffusion bonding of sapphire[D].Doctorial thesis of Worcester Polytechnic Institute,Worcester,USA,2002:95-135.
[18]Fujitsu S,Ono S,Nomura H,et al.Joining of single-crystal sapphire to alumina using silicate glasses[J].Journal of the Ceramic Society of Japan,2003,111(7):448-451.
[19]Zhang L Y,Xing D W,Sun J F,et al.Bonding layer microstructures and mechanical behavior of sapphire/sapphire joints diffusion-bonded using MgO-Al2O3-Si O2interlayer[J].International Journal of Applied Ceramic Technology,2011,8(5):1183-1191.
[20]Cao J,Li C,Song X G,et al.Microstructure evolution of alumina/alumina joint bonded by boron oxide-alumina nonmetal powder interlayer[J].International Journal of Applied Ceramic Technology,2015,12(3):652-657.
[21]Guo W,Lin T S,He P,et al.Microstructure and characterization of interfacial phases of sapphire/sapphire joint bonded using Bi2O3-B2O3-Zn O glass[J].Journal of the European Ceramic Society,2017,37(3):1073-1081.
[22]D9hler F,Zscheckel T,Kasch S,et al.A glass in the Ca O/MgO/Al2O3/Si O2system for the rapid laser sealing of alumina[J].Ceramics International,2017,43(5):4302-4308.
[23]Pablos-Martin A D,Tismer S,Benndorf G,et al.Laser soldering of sapphire substrates using a Ba Ti Al6O12thin-film glass sealant[J].Optics&Laser Technology,2016,81:153-161.
[24]Ning X S,Lin Y B,Xu W,et al.Development of a directly bonded aluminum/alumina power electronic substrate[J].Materials Science and Engineering B,2003,99(1-3):479-482.
[25]Montesa C M,Shibata N,Choi S Y,et al.High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces[J].Materials Transactions,2009,50(5):1037-1040.
[26]Suganuma K,Saiz E,Tomsia A P.Microstructure and strength of interface between pure aluminum and alpha-alumina[J].Journal of the Japan Institute of Metals,1998,62(1):92-97.
[27]Saiz E,Tomsia A P,Suganuma K.Wetting and strength issues at Al/alpha-alumina interfaces[J].Journal of the European Ceramic Society,2003,23(15):2787-2796.
[28]Ott J P,Michal G M,Chottiner G S.Shear-strength of aluminum-sapphire interfaces[J].Materials Letters,1989,8(11-12):481-485.
[29]Akatsu T,Sasaki G,Hosoda N,et al.Microstructure and strength of Al-sapphire interface by means of the surface activated bonding method[J].Journal of Materials Research,1997,12(3):852-856.
[30]Park Y J,Enoki M,Suga T,et al.Relation between plasticity of al and bonded area fraction in Al/sapphire joint fabricated by SAB[J].Journal of the Japan Institute of Metals,1999,63(12):1485-1489.
[31]Sinnott S B,Dickey E C.Ceramic/metal interface structures and their relationship to atomic and meso scale properties[J].Materials Science and Engineering R,2003,43(1-2):1-59.
[32]Ernst F.Metal-oxide interfaces[J].Materials Science&Engineering R,1995,14(3):97-156.
[33]Scheu C,Liu Y,Oh S H,et al.Interface structure and strain development during compression tests of Al2O3/Nb/Al2O3sandwiches[J].Journal of Materials Science,2006,41(23):7798-7807.
[34]Soyez G,Elssner G,Ruhle M,et al.Crack formation in sapphire/niobium/sapphire joints under compression[J].Journal of Materials Science,2000,35(5):1087-1096.
[35]Hong S M,Bartlow C C,Reynolds T B,et al.Ultrarapid transient-liquid-phase bonding of Al2O3ceramics[J].Advanced Materials,2008,20(24):4799-4801.
[36]Marks R A,Chapman D R,Danielson D T,et al.Joining of alumina via copper/niobium/copper interlayers[J].Acta Materialia,2000,48(18-19):4425-4438.
[37]Saiz E,Cannon R M,Tomsia A P.Reactive spreading:adsorption,ridging and compound formation[J].Acta Materialia,2000,48(18-19):4449-4462.
[38]Durov O V,Krasovskyy V P.In situ observation of Ag-CuTi liquid alloy/solid oxide interfaces[J].Materials Science and Engineering A,2008,495(1-2):164-167.
[39]Stephens J J,Hosking F M,Headley T J,et al.Reaction layers and mechanisms for a Ti-activated braze on sapphire[J].Metallurgical and Materials Transactions A,2003,34(12):2963-2972.
[40]Kozlova O,Voytovych R,Eustathopoulos N.Initial stages of wetting of alumina by reactive Cu-Ag-Ti alloys[J].Scripta Materialia,2011,65(1):13-16.
[41]Chang S Y,Chuang T H,Yang C L.Low temperature bonding of alumina/alumina and alumina/copper in air using Sn3.5Ag4Ti(Ce,Ga)filler[J].Journal of Electronic Materials,2007,36(9):1193-1198.
[42]Koleňák R,Chachula M,?ebo P,et al.Wettability and shear strength of active Sn2Ti solder on Al2O3ceramics[J].Soldering&Surface Mount Technology,2011,23(4):224-228.
[43]Naka M,Maeda M.Ultrasonic brazing of alumina to copper using Zn-Al-Cu fillers[J].Transactions of J W R I,1991,20(3):91-96.
[44]Kolenak R,Zubor P.Soldering of ceramic materials using ultrasonic energy[J].Welding in the World,2005:546-553.
[45]Kolenak R,Ebo P,Provaznik M,et al.Shear strength and wettability of active Sn3.5Ag4Ti(Ce,Ga)solder on Al2O3ceramics[J].Materials and Design,2011,32(7):3997-4003.
[46]Cui W,Wang C W,Yan J C,et al.Wetting and reaction promoted by ultrasound between sapphire and liquid Al-12Si alloy[J].Ultrasonics Sonochemistry,2013,20(1):196-201.
[47]Cui W,Yan J C,Dai Y,et al.Building a nano-crystalline alpha-alumina layer at a liquid metal/sapphire interface by ultrasound[J].Ultrasonics Sonochemistry,2015,22:108-112.
[48]Cui W,Li S Q,Yan J C,et al.Microstructure and mechanical performance of composite joints of sapphire by ultrasonic-assisted brazing[J].Journal of Materials Processing Technology,2018,257:1-6.
[49]Cui W,Li S Q,Yan J C,et al.Ultrasonic-assisted brazing of sapphire with high strength Al-4.5Cu-1.5Mg alloy[J].Ceramics International,2015,41(6):8014-8022.
[50]Zheng J W,Gao D M,Qiao L,et al.Influence of the Cu2Omorphology on the metallization of Al2O3ceramics[J].Surface&Coatings Technology,2016,285:249-254.
[51]齐立君,陆艳杰,张小勇,等.蓝宝石钨金属化层显微分析[J].真空电子技术,2015(4):23-27.
[52]Xin C L,Liu W B,Li N,et al.Metallization of Al2O3ceramic by magnetron sputtering Ti/Mo bilayer thin films for robust brazing to Kovar alloy[J].Ceramics International,2016,42(8):9599-9604.
[53]Donner K-R,Gaertner F,Klassen T.Metallization of thin Al2O3layers in power electronics using cold gas spraying[J].Journal of Thermal Spray Technology,2011,20(1-2):299-306.