磁控溅射工艺参数对碳膜表面形貌及浸润性的影响
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摘要
为了分析磁控溅射工艺对碳膜表面形貌及浸润性的影响,在室温下采用磁控溅射技术在硅片表面沉积碳膜,并利用原子力显微镜(AFM)、扫描电镜(SEM)、静态接触角测量仪对所得碳膜进行表征。结果表明:随着溅射功率的提高,碳膜表面粗糙度先减小后增大,致密性逐渐改善,静态接触角先增大后减小;随着溅射时间的延长,碳膜的表面粗糙度逐渐增加,均匀性在一定的溅射时间内逐渐改善,静态接触角呈现先减小后增大再减小的趋势;随着溅射压强的增加,碳膜表面粗糙度先增大后减小,致密性在过高的溅射压强下会变差,静态接触角先减小后增大。
In order to analyze the effect of magnetron sputtering process on the surface morphology and wettability of carbon film,a carbon film was deposited on the surface of silicon wafer by magnetron sputtering at room temperature,and the resulting carbon film was characterized by the atomic force microscope,scanning electron microscope and a measuring instrument of static contact angle. The results show that with the increase of sputtering power,the surface roughness of carbon film decreases first and then increases,the compactness gradually improves,and the static contact angle increases first and then decreases. With the prolongation of sputtering time,the surface roughness of carbon film increases gradually,the uniformity gradually improves in a certain sputtering time,and the static contact angle first decreases,then increases and finally decreases. With the increase of sputtering pressure,the surface roughness of the carbon film first increases and then decreases,the compactness becomes worse at the high sputtering pressure,and the static contact angle decreases first and then increases.
In order to analyze the effect of magnetron sputtering process on the surface morphology and wettability of carbon film,a carbon film was deposited on the surface of silicon wafer by magnetron sputtering at room temperature,and the resulting carbon film was characterized by the atomic force microscope,scanning electron microscope and a measuring instrument of static contact angle. The results show that with the increase of sputtering power,the surface roughness of carbon film decreases first and then increases,the compactness gradually improves,and the static contact angle increases first and then decreases. With the prolongation of sputtering time,the surface roughness of carbon film increases gradually,the uniformity gradually improves in a certain sputtering time,and the static contact angle first decreases,then increases and finally decreases. With the increase of sputtering pressure,the surface roughness of the carbon film first increases and then decreases,the compactness becomes worse at the high sputtering pressure,and the static contact angle decreases first and then increases.
引文
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[2]王永慧.碳膜力学性能表征和改善研究[D].北京:中国地质大学,2016.
[3]周英.非晶碳薄膜润湿性能的可控性研究[D].北京:北京工业大学,2006.
[4]Tay B K,Sheeja D,Lau S P,et al.Study of Surface Energy of Tetrahedral Amorphous Carbon Films Modified in Various Gas Plasma[J].Diamond&Amp;Related Materials,2003,12(10):2072-2076.
[5]Leezenberg P B,Johnston W H,Tyndall G W.Chemical Modification of Sputtered Amorphous-Carbon Surfaces[J].Appl.Phys.,2001,89(6):3498-3507.
[6]Chen J S,Lau S P,Tay B K,et al.Surface Energy of Amorphous Carbon Films Containing Iron[J].Appl.Phys.,2001,89(12):7814-7819.
[7]袁小红,魏取福,陈东生,等.磁控溅射工艺参数对涤纶机织物基纳米金属薄膜抗静电性能的影响[J].材料科学与工程学报,2014,32(6):848-852.
[8]黄佳木,李璐,刘园园,等.磁控溅射制备非晶态WO3薄膜的光催化性能[J].化工进展,2010,29(10):1923-1926.
[9]陈志华,王凤翔,宋红莲,等.溅射气压对Ti O2薄膜结构性质的影响[J].山东建筑大学学报,2012,27(6):575-578.
[10]谭晓婉.磁控溅射法制备Mg Al SnO薄膜及其特性的研究[D].深圳:深圳大学,2017.
[11]李爽.ZnO薄膜的制备及其光学性质的研究[D].济南:山东建筑大学,2010.
[12]孙海燕,耿广州,黄家寅,等.溅射气压对ZnO薄膜的影响[J].青岛大学学报(自然科学版),2011,24(1):38-41.
[13]张西鹏,李伟,范洪远.工艺参数对溅射薄膜附着性的影响[J].金属热处理,2003,(1):29-31.
[14]傅宇东,闫牧夫,郭在在,等.磁控溅射工艺参数对NdFeB薄膜表面形貌及相结构的影响[J].硅酸盐通报,2009,28(S1):66-69.
[15]栾亚.磁控溅射参数对含铬类石墨碳膜沉积速率、组织与性能影响的研究[D].西安:西安理工大学,2006.
[16]Chen Y,Wang R,Wang B,et al.Effects of mean free path on the preferentially orientated growth of Al N thin films[J].Journal of Crystal Growth.2005;283:315-9.
[17]陈志华,王凤翔,宋红莲,等.溅射气压对Ti O2薄膜结构性质的影响[J].山东建筑大学报,2012,27:575-578.
[18]鸣明,姚善泾.Na CS/PDMDAAC聚电解质复合膜的制备及静态接触角测定[J].化工学报,2009,60(3):654-659.