Impressive self-healing phenomenon of Cu_2ZnSn(S, Se)_4 solar cells
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摘要
A study of the self-healing phenomenon of Cu_2ZnSn(S, Se)_4(CZTSSe) solar cells has shown more than 10% enhancement in cell performance after storage at room temperature for a week, with a significant improvement in the open-circuit photovoltage(V_(oc)) and fill factor(F F). In addition, up to 10.45% power conversion efficiency(PCE) has been achieved.No obvious change in crystallinity, crystal phase, optical absorption or elemental distribution in the CZTSSe films was detected on examining the x-ray diffraction(XRD) pattern, Raman spectrum, ultraviolet-visible(UV-Vis), and TOF-SIMS.Further investigations on the charge carrier concentration, charge radiative recombination, and band structure suggest that the enhancement in PCE stems mainly from a reduction in deep defects of the CZTSSe semiconductor film.
A study of the self-healing phenomenon of Cu_2ZnSn(S, Se)_4(CZTSSe) solar cells has shown more than 10% enhancement in cell performance after storage at room temperature for a week, with a significant improvement in the open-circuit photovoltage(V_(oc)) and fill factor(F F). In addition, up to 10.45% power conversion efficiency(PCE) has been achieved.No obvious change in crystallinity, crystal phase, optical absorption or elemental distribution in the CZTSSe films was detected on examining the x-ray diffraction(XRD) pattern, Raman spectrum, ultraviolet-visible(UV-Vis), and TOF-SIMS.Further investigations on the charge carrier concentration, charge radiative recombination, and band structure suggest that the enhancement in PCE stems mainly from a reduction in deep defects of the CZTSSe semiconductor film.
A study of the self-healing phenomenon of Cu_2ZnSn(S, Se)_4(CZTSSe) solar cells has shown more than 10% enhancement in cell performance after storage at room temperature for a week, with a significant improvement in the open-circuit photovoltage(V_(oc)) and fill factor(F F). In addition, up to 10.45% power conversion efficiency(PCE) has been achieved.No obvious change in crystallinity, crystal phase, optical absorption or elemental distribution in the CZTSSe films was detected on examining the x-ray diffraction(XRD) pattern, Raman spectrum, ultraviolet-visible(UV-Vis), and TOF-SIMS.Further investigations on the charge carrier concentration, charge radiative recombination, and band structure suggest that the enhancement in PCE stems mainly from a reduction in deep defects of the CZTSSe semiconductor film.
引文
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[5]Altamura G and Vidal J 2016 Chem.Mater.28 3540
[6]Chen S,Walsh A,Gong X G and Wei S H 2013 Adv.Mater.25 1522
[7]Wang W,Winkler M T,Gunawan O,Gokmen T,Todorov T K,Zhu Y and Mitzi D B 2014 Adv.Energy Mater.4 1301465
[8]Jackson P,Wuerz R,Hariskos D,Lotter E,Witte W and Powalla M2016 Phys.Status Solidi Rapid Res.Lett.10 583
[9]Min X,Shi J J,Guo L B,Yu Q,Zhang P P,Tian Q W,Li D M,Luo Y H,Wu H J,Meng Q B and Wu S X 2018 Chin.Phys.B 27 016402
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[11]Prabhakar T and Jampana N 2011 Sol.Energy Mater.Sol.Cells 95 1001
[12]Li J B,Chawla V and Clemens B M 2012 Adv.Mater.24 720
[13]L o′pez-Marino S,Sa′nchez Y,Esp′?ndola-Rodr′?guez M,Alcobe′X,Xie H,Neuschitzer M,Becerril I,Giraldo S,Dimitrievska M,Placidi M,Fourdrinier L,Izquierdo-Roca V,Pe′rez-Rodr′?guez A and Saucedo E2016 J.Mater.Chem.A 4 1895
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[15]Chen F S,Sung J C,Yang C Y and Lu C H 2015 J.Nanomater.2015579510
[16]Dullweber T,Lundberg O,Malmstrom J,Bodegard M,Stolt L,Rau U,Schock H W and Werner J H 2001 Thin Solid Films 387 11
[17]Dullweber T,Hanna G,Rau U and Schock H W 2001 Sol.Energy Mater.Sol.Cells 67 145
[18]Gloeckler M and Sites J R 2005 J.Phys.Chem.Solids 66 1891
[19]Qi Y F,Kou DX,Zhou W H,Zhou Z J,Tian Q W,Meng Y N,Liu X S,Du Z L and Wu S X 2017 Energy Environ.Sci.10 2401
[20]Yang K J,Son D H,Sung S J,Sim J H,Kim Y I,Park S N,Jeon D H,Kim J,Hwang D K,Jeon C W,Nam D,Cheong H,Kang J K and Kim D H 2016 J.Mater.Chem.A 4 10151
[21]Meng Q B 2017 Personal discussion on“The first copper-based thin film solar cell seminar”
[22]Antunez P D,Bishop D M,Luo Y and Haight R 2017 Nat.Energy 2884
[23]Colina M,Bailo E,Medina-Rodr′?guez B,Kondrotas R,Sa′nchezGonza′lez Y,Sylla D,Placidi M,Blanes M,Ramos F,Cirera A,Pe′rez Rodr′?guez A and Saucedo E 2018 J.Alloys Compd.735 2462
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[26]Cahen D and Noufi R 1989 Appl.Phys.Lett.54 558
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[29]Hironiwa D,Sakai N,Kato T,Sugimoto H,Tang Z,Chantana J and Minemoto T 2015 Thin Solid Films 582 151
[30]Yang Y,Huang L and Pan D 2017 ACS Appl.Mater.Interfaces 9 23878
[31]Hegedus S S and Shafarman W N 2004 Prog.Photovoltaics:Res.Appl.12 155
[32]Huang T J,Yin X S,Qi G J and Gong H 2014 Phys.Status Solidi-Rapid Res.Lett.8 735
[33]Bourdais S,Chone C,Delatouche B,Jacob A,Larramona G,Moisan C,Lafond A,Donatini F,Rey G,Siebentritt S,Walsh A and Dennler G2016 Adv.Energy Mater.6 1502276
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[42]Li J J,Wang D X,Li X L,Zeng Y and Zhang Y 2018 Adv.Sci.51700744
[43]Duan H S,Yang W,Bob B,Hsu C J,Lei B and Yang Y 2013 Adv.Funct.Mater.23 1466
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[47]Zhu H,Kalkan A K,Hou J and Fonash S J 1999 AIP Conf.Proc.462309
[48]Yan Y,Jiang C S,Noufi R,Wei S H,Moutinho H R and Al-Jassim M M 2007 Phys.Rev.Lett.99 235504
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[52]Ito H,Oka M,Ogino T,Takeda A and Mizushima Y 1984 Jpn.J.Appl.Phys.Part 1-Regul.Paper Short Notes Rev.Paper 23 719