摘要
高纯三氟化硼是半导体离子注入用的重要掺杂离子源,在电子工业中有着广泛的应用。采用六西格玛流程改善方法,通过D-定义、M-测量、A-分析、I-改进、C-控制五个阶段,找出影响三氟化硼纯度的主要因子,然后对因子进行改进,通过试运行后,最终将三氟化硼纯度从99. 5%提高到99. 95%。
Highly purified boron trifluoride is an important doping ion source for semiconductor ion implantation. It is widely used in electronics industry. Taking the method which is improved by 6-Sigma procedure and through five stages of D-definition,M-measurement,A-analysis,I-improvement,and C-control,the main factors affecting purity of boron trifluoride is found out.According to the test,the purity of boron trifluoride is increased from 99. 5% to 99. 95% by improving these factors.
引文
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