超大规模FPGA的单粒子效应脉冲激光测试方法
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摘要
建立了一种28nm HPL硅工艺超大规模SRAM型FPGA的单粒子效应测试方法。采用静态测试与动态测试相结合的方式,通过ps级脉冲激光模拟辐照实验,对超大规模FPGA进行单粒子效应测试。对实验所用FPGA的各敏感单元(包括块随机读取存储器、可配置逻辑单元、可配置存储器)的单粒子闩锁效应和单粒子翻转极性进行了研究。实验结果证明了测试方法的有效性,揭示了多种单粒子闩锁效应的电流变化模式,得出了各单元的单粒子效应敏感性区别。针对块随机读取存储器、可配置逻辑单元中单粒子效应翻转极性的差异问题,从电路结构方面进行了机理分析。
A testing method on single event effects(SEE)of ultra-scale FPGA based on 28 nm HPL silicon technology was established.Through the combination of static and dynamic testing,the ps level pulsed Laser simulation experiment was carried out to test the SEE of ultra-scale FPGA.Single event latch-up and single event upset of various sensitive modules(including BRAM,CLB and CM)were investigated.The tested results proved the effectiveness of the testing method,revealed several current-changing patterns of single event latch-up,and compared the difference of SEE's sensitivity between different modules.The difference of SEE's polarity between block random access module and configurable logic module was elaborated on the level of circuit structure.
A testing method on single event effects(SEE)of ultra-scale FPGA based on 28 nm HPL silicon technology was established.Through the combination of static and dynamic testing,the ps level pulsed Laser simulation experiment was carried out to test the SEE of ultra-scale FPGA.Single event latch-up and single event upset of various sensitive modules(including BRAM,CLB and CM)were investigated.The tested results proved the effectiveness of the testing method,revealed several current-changing patterns of single event latch-up,and compared the difference of SEE's sensitivity between different modules.The difference of SEE's polarity between block random access module and configurable logic module was elaborated on the level of circuit structure.
引文
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[2]肖德元,陈国庆.半导体器件发展历程及其展望[J].固体电子学研究与进展,2006,26(4):510-515.
[3]DODD P E,SHANEYFELT M R,SCHWANK J R,et al.Current and future challenges in radiation effects on CMOS electronics[J].IEEE Trans Nucl Sci,2010,4(57):1747-1763.
[4]LEE D S,WIRTHLIN M,SWIFT G,et al.Singleevent characterization of the 28 nm Xilinx Kintex-7field-programmable gate array under heavy ion irradiation[EB/OL].https://ieeexplore.ieee.org/document/7004595,2014.
[5]何飞,程亚.飞秒激光微加工:激光精密加工领域的新前沿[J].中国激光,2007,34(5):595-622.
[6]梅遂生.激光技术的40年[J].大学物理,2000,19(7):3-6.
[7]雷志锋,罗宏伟.脉冲激光模拟单粒子效应研究进展[C]//第十五届可靠性学术年会.张家界,中国.2010:186-190.
[8]XI K,ZHANG F,LI J,et al.Pulsed-laser testing for single event effects in a stand-alone resistive random access memory[C]//IEEE 24th IPFA.Chengdu,China.2017:1-4.
[9]ZHAN Y Y,CAO S Z,YI Z L,et al.Testing of single event effect on several commercial chips of optical transceivers based on heavy ions and pulse laser methods[C]//16th ICOCN.Wuzhen,China.2017:1-3.
[10]黄建国,韩建伟.脉冲激光诱发单粒子效应的机理[J].中国科学G辑,2004,34(2):121-130.
[11]Xilinx 7 series FPGAs overview v2.0[EB/OL].http://www.xilinx.com/support/documentation/data_sheets/ds180_7Series_Overview.pdf,2017.
[12]邱金娟,徐宏杰,潘雄,等.SRAM型FPGA单粒子翻转测试及加固技术研究[J].电光与控制,2011,18(8):84-88.
[13]ALLEN G,SWIFT G,CARMICHAEL C,et al.Virtex-4QV static SEU characterization summary[J].JPL Publication,2008,4(8):08-16.
[14]HE W,WANG Y K,XING K F,et al.SEU readback interval strategy of SRAM-based FPGA for space application[C]//IEEE Int Conf Comput Sci&Autom Engineer.Shanghai,China.2011:238-241.
[15]AMRBAR M,IROM F,GUERTIN S M.Heavy ion single event effects measurements of Xilinx Zynq-7000FPGA[EB/OL].https://ieeexplore.ieee.org/document/7336714,2015
[16]上官士鹏,冯国强,马英起,等.深亚微米SRAM器件单粒子效应的脉冲激光辐照试验研究[J].原子能科学技术,2012,46(8):1019-1024.