氮化铝粉体制备技术的研究进展
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摘要
氮化铝(AlN)因具备优良的理化性能,目前已被广泛应用于微电子及半导体器件的基板和封装领域中,同时在功率器件、深紫外LED及半导体衬底方面也具有广阔发展前景。AlN粉体作为AlN产品的主要原料是决定其性能的关键因素。在对AlN的结构与性能综合分析基础上,系统介绍了当前AlN粉体制备技术的研究进展和应用现状,同时对各制备工艺的特点进行了分析探讨。指出在微米AlN粉体制备方面,碳热还原法和直接氮化法仍具有明显优势,而化学气相沉积法和等离子体法则在纳米AlN粉体制备方面具有良好的应用前景。获得更高纯度、粒度可控、形貌均匀分散的粉体是AlN制备技术的研究方向。
Aluminum nitride(AlN) has been widely used in the field of substrates and packaging of microelectronics and semiconductor devices due to its excellent physical and chemical properties. And it has broad prospects in power devices, deep ultraviolet LEDs and semiconductor substrates. As the main raw material of AlN products, AlN powder is the key factor in determining its performance. Based on the comprehensive analysis of the structure and properties of AlN, the research progress and application status of the current preparation technology of AlN powder are systematically introduced, and the characteristics of each preparation process are analyzed and discussed. It is pointed out that the carbothermal reduction method and the direct nitridation method still have obvious advantages in the preparation of micron-sized AlN powder, while the chemical vapor deposition method and the plasma method have good application prospects in the preparation of nano-sized AlN powder. The research direction of the AlN preparation technology is to obtain powders with higher purity, controllable particle size and uniformly dispersed morphology.
Aluminum nitride(AlN) has been widely used in the field of substrates and packaging of microelectronics and semiconductor devices due to its excellent physical and chemical properties. And it has broad prospects in power devices, deep ultraviolet LEDs and semiconductor substrates. As the main raw material of AlN products, AlN powder is the key factor in determining its performance. Based on the comprehensive analysis of the structure and properties of AlN, the research progress and application status of the current preparation technology of AlN powder are systematically introduced, and the characteristics of each preparation process are analyzed and discussed. It is pointed out that the carbothermal reduction method and the direct nitridation method still have obvious advantages in the preparation of micron-sized AlN powder, while the chemical vapor deposition method and the plasma method have good application prospects in the preparation of nano-sized AlN powder. The research direction of the AlN preparation technology is to obtain powders with higher purity, controllable particle size and uniformly dispersed morphology.
引文
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[16] SAKURAI T,YAMADA O,MIYAMOTO Y.Combustion synthesis of fine AlN powder and it reaction control [J].Materials Science and Engineering:A,2006,416(1/2):40-44.
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[20] CHAURASIA H,TRIPATHI S K,BILGAIYAN K,et al.Preparation and properties of AlN (aluminum nitride) powder/thin films by single source precursor [J].New Journal of Chemistry,2019,43(4):1900-1909.
[21] WU N C,TASI M S,WANG M C,et al.The morphology and formation mechanism of aluminum nitride nanocrystals synthesized by chemical vapor deposition [J].Journal of Crystal Growth,2000,208(1/2/3/4):189-196.
[22] LI L,NI G H,ZHAO Y J,et al.Synthesis of nano-AlN powders from Al wire by arc plasma at atmospheric pressure [J].Ceramics International,2018,44(17):21810-21815.
[23] KIM K J.Plasma synthesis and characterization of nanocrystalline aluminum nitride particles by aluminum plasma jet discharge [J].Journal of Crystal Growth,2005,283(3/4):540-546.
[24] LI C H,KAO L H,CHEN M J,et al.Rapid preparation of aluminum nitride powders by using microwave plasma [J].Journal of Alloys and Compounds,2012,542:78-84.
[25] KIM K I,CHOI S C,KIM J H,et al.Synthesis and characterization of high-purity aluminum nitride nano-powder by RF induction thermal plasma [J].Ceramics International,2014,40(6):8117-8123.
[26] CHAUDHURI M G,BASU J,DAS G C,et al.A novel method of synthesis of nanostructured aluminum nitride through sol-gel route by in situ generation of nitrogen [J].Journal of the American Ceramic Society,2013,96(2):385-390.
[27] CHIKAMI H,FUKUSHIMA J,HAYASHI Y,et al.Low-temperature synthesis of aluminum nitride from transition alumina by microwave processing [J].Journal of the American Ceramic Society,2016,99(11):3540-3545.
[28] 戴乐阳,张宝剑,林少芬,等.等离子体辅助球磨活化Al2O3合成AlN [J].中国有色金属学报,2015,25(1):171-178.DAI L Y,ZHANG B J,LIN S F,et al.Synthesis of AlN from Al2O3 activated by plasma assisted ball milling [J].The Chinese Journal of Nonferrous Metals,2015,25(1):171-178(in Chinese).
[29] HE Q,QIN M L,HUANG M,et al.Mechanism and kinetics of combustion-carbothermal synthesis of AlN nanopowders [J].Ceramics International,2017,43(12):8755-8762.
[30] JIN L,CHENG H J,CHEN J L,et al.Controlling morphology evolution of AlN nanostructures:influence of growth conditions in physical vapor transport [J].Journal of Semiconductors,2018,39(7):073001-1-073001-5.
[2] HUANG D,LIU Z,HARRIS J,et al.High thermal conductive AlN substrate for heat dissipation in high-powder LEDs [J].Ceramics International,2019,45(1):1412-1415.
[3] 张伟儒,陈建荣.宽禁带半导体AlN晶体发展现状及展望 [J].新材料产业,2015(12):18-23.
[4] TRAN B T,MAEDA N,JO M,et al.Performance improvement of AlN crystal quality grown on patterned Si(111) substrate for deep UV-LED applications [J].Scientific Reports,2016(6):35681-1-35681-6.
[5] 赵超亮,宋波,张幸红,等.氮化铝晶体生长技术的研究进展 [J].材料导报,2012,26(9):11-14,26.ZHAO C L,SONG B,ZHANG X H,et al.Research progress in growth of aluminum nitride crystal [J].Materials Review,2012,26(9):11-14,26(in Chinese).
[6] FRANK L,STEFAN K,CARSTEN H,et al.Precipitates originating from tungsten crucible parts in AlN bulk crystals grown by the PVT method [J].Crystal Research & Technology,2016,51(2):129-136.
[7] 汪佳,曹凯,刘理想,等.单晶生长用AlN粉料的烧结提纯工艺实验研究 [J].半导体光电,2017,38(6):830-833.WANG J,CAO K,LIU L X,et al.Experimental research on AlN powder source purification by sintering process for AlN crystal growth [J].Semiconductor Opto-electronics,2017,38(6):830-833 (in Chinese).
[8] CHU A M,QIN M L,RAFI U D,et al.Effect of aluminum source on the synthesis of AlN powders from combustion synthesis precursors [J].Materials Research Bulletin,2012,47(9):2475-2479.
[9] MAO X X,LI J,ZHENG H L,et al.Synthesis of AlN powder by carbothermal reduction-nitridation of alumina/carbon black foam [J].Journal of Inorganic Materials,2017,32(10):1115-1120.
[10] JUNG W S.Synthesis of aluminum nitride powder from δ-alumina nanopowders under a mixed gas flow of nitrogen and hydrogen [J].Ceramics International,2012,38(1):871-874.
[11] KIM J K,JUNG W S.Nitridation of δ-alumina to aluminum nitride under a flow of ammonia and its mechanism [J].Journal of the Ceramic Society of Japan,2011,119(5):351-354.
[12] FU L,QIAO L,ZHENG J W,et al.Phase,microstructure and sintering of aluminum nitride powder by the carbothermal reduction-nitridation process with Y2O3 additon [J].Journal of the European Ceramic Society,2018,38(4):1170-1178.
[13] 姜珩,康志君,谢元锋,等.铝粉直接氮化法制备氮化铝粉末[J].稀有金属,2013,37(3):396-400.JIANG H,KANG Z J,XIE Y F,et al.Synthesis of aluminum nitride powder by aluminum powder direct nitridation[J].Chinese Journal of Rare Metals,2013,37(3):396-400(in Chinese).
[14] 裴新美,戴英,南策文.Al粉氮化制备超细AlN粉[J].硅酸盐通报,2001,20(4):49-51.PEI X M,DAI Y,NAN C W.Preparation of ultrafine AlN powders via nitridation of aluminum powders [J].Bulletin of the Chinese Ceramic Society,2001,20(4):49-51(in Chinese).
[15] HIRANAKA A,YI X M,SAITA G,et al.Effects of Al particle size and nitrogen pressure on AlN combustion synthesis [J].Ceramics International,2017,43(13):9872-9876.
[16] SAKURAI T,YAMADA O,MIYAMOTO Y.Combustion synthesis of fine AlN powder and it reaction control [J].Materials Science and Engineering:A,2006,416(1/2):40-44.
[17] ZAKORZHEVSKII V V,BOROVINSKAYA I P.Combustion synthesis of submicron AlN particles [J].Inorganic Materials,2015,51(6):566-571.
[18] KUBO K,ITATANI K,HOWELL F S,et al.Some properties of aluminium-nitride powder prepared by metal-organic chemical vapour deposition [J].Journal of the European Ceramic Society,1995,15(7):661-666.
[19] PANCHULA M L,YING J Y.Nanocrystalline aluminum nitride:I,vapor-phase synthesis in a forced-flow reactor [J].Journal of the American Ceramic Society,2003,86(7):1114-1120.
[20] CHAURASIA H,TRIPATHI S K,BILGAIYAN K,et al.Preparation and properties of AlN (aluminum nitride) powder/thin films by single source precursor [J].New Journal of Chemistry,2019,43(4):1900-1909.
[21] WU N C,TASI M S,WANG M C,et al.The morphology and formation mechanism of aluminum nitride nanocrystals synthesized by chemical vapor deposition [J].Journal of Crystal Growth,2000,208(1/2/3/4):189-196.
[22] LI L,NI G H,ZHAO Y J,et al.Synthesis of nano-AlN powders from Al wire by arc plasma at atmospheric pressure [J].Ceramics International,2018,44(17):21810-21815.
[23] KIM K J.Plasma synthesis and characterization of nanocrystalline aluminum nitride particles by aluminum plasma jet discharge [J].Journal of Crystal Growth,2005,283(3/4):540-546.
[24] LI C H,KAO L H,CHEN M J,et al.Rapid preparation of aluminum nitride powders by using microwave plasma [J].Journal of Alloys and Compounds,2012,542:78-84.
[25] KIM K I,CHOI S C,KIM J H,et al.Synthesis and characterization of high-purity aluminum nitride nano-powder by RF induction thermal plasma [J].Ceramics International,2014,40(6):8117-8123.
[26] CHAUDHURI M G,BASU J,DAS G C,et al.A novel method of synthesis of nanostructured aluminum nitride through sol-gel route by in situ generation of nitrogen [J].Journal of the American Ceramic Society,2013,96(2):385-390.
[27] CHIKAMI H,FUKUSHIMA J,HAYASHI Y,et al.Low-temperature synthesis of aluminum nitride from transition alumina by microwave processing [J].Journal of the American Ceramic Society,2016,99(11):3540-3545.
[28] 戴乐阳,张宝剑,林少芬,等.等离子体辅助球磨活化Al2O3合成AlN [J].中国有色金属学报,2015,25(1):171-178.DAI L Y,ZHANG B J,LIN S F,et al.Synthesis of AlN from Al2O3 activated by plasma assisted ball milling [J].The Chinese Journal of Nonferrous Metals,2015,25(1):171-178(in Chinese).
[29] HE Q,QIN M L,HUANG M,et al.Mechanism and kinetics of combustion-carbothermal synthesis of AlN nanopowders [J].Ceramics International,2017,43(12):8755-8762.
[30] JIN L,CHENG H J,CHEN J L,et al.Controlling morphology evolution of AlN nanostructures:influence of growth conditions in physical vapor transport [J].Journal of Semiconductors,2018,39(7):073001-1-073001-5.