MOCVD生长AlGaInAs/InP多量子阱激光器
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摘要
为研制符合高线性大功率的应变多量子阱激光器,文章在理论上计算了应变补偿,实验选用了金属有机物化学气相沉淀(MOCVD)工艺来研制生长AlGaInAs应变补偿多量子阱结构,最终有源区采用了7组张压应变交替的势垒和势阱层。激光器样本芯片采用共面电极结构,使得激光器的工作电流无需通过衬底,从而降低了激光器工作电容,其电容与传统激光器相比得到相应地减小,提高了激光器的光电特性。实验室制作出了应变多量子阱激光器样本芯片,光荧光分析得出光致发光谱,激射波长为1 304nm;阈值电流为Ith≤9mA;单面斜率效率为0.44 W/A。测试结果表明该器件有良好的性能参数。
In order to develop a strain high Multiple Quantum Well(MQW)laser with high linearity and high power,the strain compensation is theoretically calculated.Metal Organic Chemical Vapor Deposition(MOCVD)process is used to develop the AlGaInAs strain compensated MQW structure.In the final active region,seven sets of tensional strain alternation potential barrier and well layer are used.Since the device adopts the structure of the coplanar electrode,the working current of the laser does not need to pass through the substrate,resulting the reduction of the operating capacitance of laser.The capacitance is reduced when compared with the conventional one and the photoelectric characteristic of the laser is improved.We also fabricate a sample of a strained MQW laser.The Photoluminescence(PL)spectra are obtained by fluorescence analysis.The lasing wavelength is 1 304 nm.The threshold current is Ith ≤9 mA.The slope efficiency of one side is 0.44 W/A.Test results indicate the device has good performance parameters,which has the characteristics of high linearity and high power.
In order to develop a strain high Multiple Quantum Well(MQW)laser with high linearity and high power,the strain compensation is theoretically calculated.Metal Organic Chemical Vapor Deposition(MOCVD)process is used to develop the AlGaInAs strain compensated MQW structure.In the final active region,seven sets of tensional strain alternation potential barrier and well layer are used.Since the device adopts the structure of the coplanar electrode,the working current of the laser does not need to pass through the substrate,resulting the reduction of the operating capacitance of laser.The capacitance is reduced when compared with the conventional one and the photoelectric characteristic of the laser is improved.We also fabricate a sample of a strained MQW laser.The Photoluminescence(PL)spectra are obtained by fluorescence analysis.The lasing wavelength is 1 304 nm.The threshold current is Ith ≤9 mA.The slope efficiency of one side is 0.44 W/A.Test results indicate the device has good performance parameters,which has the characteristics of high linearity and high power.
引文
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[3]Selmic S R,Chou Tso-Min,Sih Jiehping,et al.Design and Characterization of 1.3-μm AlGaInAs-InP MultipleQuantum-Well Lasers[J].IEEE Journal of Selected Topics in Quantum Electronics,2001,7(2):340-349.
[4]何斌太,刘国军,魏志鹏,等.1.3μm InGaAsSb/GaAsSb量子阱激光器有源区结构设计[J].激光与红外,2015,(5):505-508.
[5]陈远祥,余建国,王任凡,等.基于自零差检测的高速模式复用无源光网络[J].光通信研究,2017,(5):1-5.
[6]徐遵图.980nm大功率InGaAs/GaAs和InGaAs/InGaAsP应变量子阱激光器的研制[D].北京:北京工业大学,1999.
[7]徐华伟.852nm半导体激光器结构设计与外延生长[D].北京:中国科学院研究生院,2012.
[8]李小波.基于大失配外延GaAs基InGaAsP激光器材料生长和器件的研究[D].北京:北京邮电大学,2015.
[9]金哲军.InP基InGaAIAs/InGaAsSb应变量子阱激光器材料与设计研究[D].长春:长春理工大学,2008.
[10]刘崇,葛剑虹,陈军.外腔反馈半导体激光器的损耗和阈值特性研究[J].中国激光,2004,31(12):1413-1416.
[11]Yekta V B,Kaatuzian H,Yekta V B,et al.Simulation and Temperature Characteristics Improvement of 1.3μm AlGaInAs Multiple Quantum Well Laser[J].International Journal of Optics&Applications,2014,4(2):46-53.
[12]韩威.1.55μm高速激光器材料结构设计及外延生长[D].天津:河北工业大学,2006.
[13]Yan C L,Qin L,Ning Y Q,et al.Calculation of Energy Band Structure of GaInAs/GaAs Quantum Well[J].Laser Journal,2004,25(5):29-31.
[14]Ke Q,Tan S Y,Liu S T,et al.Fabrication and Optimization of 1.55μm InGaAsP/In High-Power Semiconductor Diode Laser[J].Journal of Semiconductors,2015,36(9):93-96.
[15]华玲玲,杨阳.应变量子阱能带偏置的分析与计算[J].激光与光电子学进展,2013,50(5):168-175.
[16]马宏,易新建,金锦炎,等.MOVPE生长1.3μm无致冷AlGaInAs/InP应变补偿量子阱激光器研究[J].中国激光,2002,29(3):193-196.
[17]Sato N,Shirao M,Sato T,et al.Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-μm Wavelength[J].IEEE Journal of Selected Topics in Quantum Electronics,2013,19(4):1502608.