窄线宽1064 nm分布布拉格反射半导体激光器
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摘要
1064nm分布布拉格反射(DBR)半导体激光器具有窄线宽、输出稳定的特性,在自由空间激光通信用种子光源等方面具有广阔的应用前景。设计了一种单模、窄线宽的1064nm DBR半导体激光器,利用金属有机化合物气相沉积技术生长出InGaAs应变量子阱半导体激光器材料,并制备出腔长为1200μm的脊型波导1064nm DBR半导体激光器。当注入电流为70mA时,室温下该激光器的连续输出功率可达到7mW,3dB光谱线宽为0.12nm。
The 1064 nm distributed Bragg reflector(DBR)semiconductor laser has the characteristics of narrow linewidth and stable output,and it has a broad application prospect in the field of free space laser communication used as seed light source.A single mode and narrow linewidth 1064 nm DBR semiconductor laser is designed.Metalorganic chemical vapor deposition(MOCVD)technique is used to grow InGaAs strained quantum well laser material,and a ridge waveguide 1064 nm DBR semiconductor laser with the cavity length of 1200μm is fabricated.When injection current is 70 mA,the continuous output power of the laser can reach 7 mW,and 3 dB spectral linewidth of the laser is 0.12 nm at room temperature.
The 1064 nm distributed Bragg reflector(DBR)semiconductor laser has the characteristics of narrow linewidth and stable output,and it has a broad application prospect in the field of free space laser communication used as seed light source.A single mode and narrow linewidth 1064 nm DBR semiconductor laser is designed.Metalorganic chemical vapor deposition(MOCVD)technique is used to grow InGaAs strained quantum well laser material,and a ridge waveguide 1064 nm DBR semiconductor laser with the cavity length of 1200μm is fabricated.When injection current is 70 mA,the continuous output power of the laser can reach 7 mW,and 3 dB spectral linewidth of the laser is 0.12 nm at room temperature.
引文
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[17]Decker J,Crump P,Fricke J,et al.Narrow stripe broad area lasers with high order distributed feedback surface gratings[J].Photonics Technology Letters,2014,26(8):829-832.
[18]Zhang Y M.Applied optics[M].Beijing:China Machine Press,2006.张以谟.应用光学[M].北京:机械工业出版社,2006.
[19]Su S T,Tang S F,Chen T C,et al.Temperaturedependent VCSEL optical characteristics based on graded AlxGa1-xAs/GaAs distributed Bragg reflectors:reflectivity and beam profile analyses[C].SPIE,2006,6132:61320L.
[2]Wang Z F,Li T,Yang G W,et al.Development of808nm quasi-continuous wave laser diode bar with600 W output power[J].Chinese Journal of Lasers,2017,44(6):0601004.王贞福,李特,杨国文,等.808nm准连续600W高功率半导体激光芯片研制[J].中国激光,2017,44(6):0601004.
[3]Liu M H,Cui B F,He X,et al.Study of high power semiconductor laser with low threshold current[J].Chinese Journal of Lasers,2016,43(5):0502001.刘梦涵,崔碧峰,何新,等.大功率低阈值半导体激光器研究[J].中国激光,2016,43(5):0502001.
[4]Pan B W,Yu L Q,Lu D,et al.20kHz narrow linewidth fiber Bragg grating external cavity semiconductor laser[J].Chinese Journal of Lasers,2015,42(5):0502007.潘碧玮,余力强,陆丹,等.20kHz窄线宽光纤光栅外腔半导体激光器[J].中国激光,2015,42(5):0502007.
[5]Liu D D,Wang Y,Ye Z,et al.Grating fabrication of 808nm distributed feedback semiconductor laser by holographic photo lithography[J].Chinese Journal of Lasers,2015,42(2):0202008.刘丹丹,王勇,叶镇,等.全息光刻制备808nm分布反馈半导体激光器的光栅[J].中国激光,2015,42(2):0202008.
[6]Li Z Y,Tan R Q,Huang W,et al.Laser diode with long external cavity of volume Bragg grating[J].Chinese Journal of Lasers,2012,39(11):1102006.李志永,谭荣清,黄伟,等.长腔长体布拉格光栅外腔半导体激光器[J].中国激光,2012,39(11):1102006.
[7]McIntosh K A,Brown E R,Nichols K B,et al.High-power high-modulation-speed 1060-nm DBR lasers for green-light emission[J].IEEE Photonics Technology Letters,2006,18(4):616-618.
[8]Paschke K,Spiebberger S,Kaspari C,et al.Highpower distributed Bragg reflector ridge-waveguide diode laser with very small spectral linewidth[J].Optics Letters,2010,35(3):402-404.
[9]Feise D,Blume G,Pohl J,et al.Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings[C].SPIE,2003,8640:86400A.
[10]Park J H,Jedrzejczyk D,Feise D.Compact blue light source by single-pass second harmonic generation of DBR tapered laser radiation[J].IEEE Photonics Technology Letters,2014,26(19):1936-1939.
[11]Jedrzejczyk D,Asbahr P,Pulka M.Coupling of DBR tapered diode laser radiation into a single-mode-fiber at high powers[C].SPIE,2014,8965:89651A.
[12]Ryasnyanskiy A,Vorobiev N,Smirnov V,et al.DBR and DFB lasers in neodymium-and ytterbiumdoped photothermorefractive glasses[J].Optics Letters,2014,39(7):2156-2159.
[13]Achtenhagen M,Amarasinghe N V,Evans G A.High-power distributed Bragg reflector lasers operating at 1065nm[J].Electronics Letters,2007,43(14):755-757.
[14]Martin H H,Hong K N,Kechang S,et al.Highpower distributed Bragg reflector lasers for greenlight generation[C].SPIE,2006,6116:61160M.
[15]Hasler K H,Sumpf B,Adamiec P,et al.5-W DBR tapered lasers emitting at 1060 nm with a narrow spectral linewidth and a nearly diffraction-limited beam quality[J].IEEE Photonics Technology Letters,2008,20(19):1648-1650.
[16]Spieberger S,Schiemangk M,Wicht A,et al.DBR laser diodes emitting near 1064 nm with a narrow intrinsic linewidth of 2kHz[J].Applied Physics B,2011,104(4):813-818.
[17]Decker J,Crump P,Fricke J,et al.Narrow stripe broad area lasers with high order distributed feedback surface gratings[J].Photonics Technology Letters,2014,26(8):829-832.
[18]Zhang Y M.Applied optics[M].Beijing:China Machine Press,2006.张以谟.应用光学[M].北京:机械工业出版社,2006.
[19]Su S T,Tang S F,Chen T C,et al.Temperaturedependent VCSEL optical characteristics based on graded AlxGa1-xAs/GaAs distributed Bragg reflectors:reflectivity and beam profile analyses[C].SPIE,2006,6132:61320L.