The effects of Na on the growth of Cu_2ZnSnSe_4 thin films using low-temperature evaporation process
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摘要
Cu_2ZnSnSe_4(CZTSe) absorbers were deposited on borosilicate glass substrate using the low-temperature process, and different Na incorporation methods were applied to investigate the effects of Na on the CZTSe growth.Na was diffused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells.With the post-deposition treatment, the effect of Na on CZTSe growth was excluded, and most of Na was expected to reside at grain boundaries.The conversion efficiency of the completed device was improved due to the enhancement of open circuit voltage and fill factor.The efficiency of 2.85% was achieved at substrate temperature as low as 420℃.
Cu_2ZnSnSe_4(CZTSe) absorbers were deposited on borosilicate glass substrate using the low-temperature process, and different Na incorporation methods were applied to investigate the effects of Na on the CZTSe growth.Na was diffused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells.With the post-deposition treatment, the effect of Na on CZTSe growth was excluded, and most of Na was expected to reside at grain boundaries.The conversion efficiency of the completed device was improved due to the enhancement of open circuit voltage and fill factor.The efficiency of 2.85% was achieved at substrate temperature as low as 420℃.
Cu_2ZnSnSe_4(CZTSe) absorbers were deposited on borosilicate glass substrate using the low-temperature process, and different Na incorporation methods were applied to investigate the effects of Na on the CZTSe growth.Na was diffused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells.With the post-deposition treatment, the effect of Na on CZTSe growth was excluded, and most of Na was expected to reside at grain boundaries.The conversion efficiency of the completed device was improved due to the enhancement of open circuit voltage and fill factor.The efficiency of 2.85% was achieved at substrate temperature as low as 420℃.
引文
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[3]Sun D,Xu S Z,Zhang L,Chen Z,Ge Y,Wang N,Liang X J,Wei C C,Zhao Y and Zhang X D,J.Semicond.36,044009(2015).
[4]Sun D,Ge Y,Zhang L,Xu S Z,Chen Z,Wang N,Liang X J,Wei C C,Zhao Y and Zhang X D,J.Semicond.37,013004(2016).
[5]Zhang L,He Q,Jiang W L,Li C J and Sun Y,Chin.Phys.Lett.25,734(2008).
[6]Kessler F and Rudmann D,Sol.Energy 77,685(2004).
[7]Shafarman W N and Zhu J,Thin Solid Films 361,473(2000).
[8]Marion S and Uwe R,Thin Solid Films 387,141(2001).
[9]Nakada T,Ohbo H,Watanabe T,Nakazawa H,Matsui M and Kunioka A,Sol.Energy Mater.Sol.Cells 49,285(1997).
[10]Shin B,Gunawan O,Zhu Y,Bojarczuk N A,Chey S Jand Guha S,Prog.Photovolt.:Res.Appl.21,72(2013).
[11]Lyahovitskakaya V,J.Appl.Phys.91,4205(2002).
[12]Probst V,Karg F,Rimmasch J,Riedl W,Stetter W,Harms H and Eibl O,MRS Proc.426,165(1996).
[13]Pauw L J,Philips Res.Rep.13,1(1985).
[14]Li J V,Kuciauskas D,Young M R and Repins I L,Appl.Phys.Lett.102,163905(2013).
[15]Zhou H P,Song T B,Hsu W C,Luo S,Ye S L,Duan HS,Hsu C J,Yang W B and Yang Y,J.Am.Chem.Soc.135,15998(2013).