一款0.6～4.2 GHz宽带低噪声放大器设计
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摘要
采用0.25μm GaAs E-pHEMT工艺设计和制作了一款0.6～4.2 GHz宽带低噪声放大器芯片。芯片采用电流复用技术,降低了整体功耗,且集成了关断(Shutdown)控制电路用于关断低噪声放大器。测试结果表明,在工作频带内,低噪声放大器增益大于23 dB,增益平坦度在2 dB左右,输入输出回波损耗小于-10 dB,噪声系数低于1 dB,输出1 dB压缩点大于17 dBm,开关时间均在30 ns左右。芯片具有宽带、噪声系数低、集成度高和低功耗等特点,在基站接收系统中具有一定的应用价值。
A 0.6～4.2 GHz wideband low noise amplifier(LNA) chip was designed and fabricated with 0.25 μm GaAs E-pHEMT process. The chip reduced power consumption by using current reuse technique, and it integrated a Shutdown control circuit to turn off LNA. Measurement results show that in the operating frequency range, the gain of LNA is larger than 23 dB, the gain flatness is about 2 dB, the input and output return loss is less than-10 dB, the noise figure is less than 1 dB, and the output power at the 1 dB compression point is larger than 17 dBm, the switch time is around 30 ns. The chip features with wideband, low noise figure, high integration density and low power consumption, it has certain application value in base station receiving system.
A 0.6～4.2 GHz wideband low noise amplifier(LNA) chip was designed and fabricated with 0.25 μm GaAs E-pHEMT process. The chip reduced power consumption by using current reuse technique, and it integrated a Shutdown control circuit to turn off LNA. Measurement results show that in the operating frequency range, the gain of LNA is larger than 23 dB, the gain flatness is about 2 dB, the input and output return loss is less than-10 dB, the noise figure is less than 1 dB, and the output power at the 1 dB compression point is larger than 17 dBm, the switch time is around 30 ns. The chip features with wideband, low noise figure, high integration density and low power consumption, it has certain application value in base station receiving system.
引文
[1] 魏碧华, 蔡道民, 武继斌. 9-15GHz GaAs E-PHEMT 高性能线性功率放大器[J]. 半导体技术, 2017(7):489-492, 498.
[2] 徐鑫, 张波, 徐辉, 等. S 频段 pHEMT 双通道低噪声放大器芯片的设计[J]. 微波学报, 2015(01):83-87.
[3] 程远垚, 宋树祥, 蒋品群. 2.4 GHz CMOS 低噪声放大器设计[J]. 广西师范大学学报 (自然科学版), 2016,34(03): 7-13.
[4] 郑远, 吴键, 艾萱, 等. 采用电流复用技术的 8mm 频段低噪声放大器[J]. 固体电子学研究与进展, 2013, 33(2): 124-129.
[5] Jhon H S, Jeon J, Kang M. Extremely low power LNA biased with 0.25-V drain-to-source voltage for 3-to-5 GHz UWB-IR application[J]. Microelectronics Journal, 2017, 61(1): 1-5.
[6] 李远鹏, 魏洪涛, 刘永强. 一款宽带低噪声放大器MMIC[J]. 半导体技术, 2016, 41(04):276-279.
[7] 曹杰杰, 李斌. 一种pHEMT小信号等效电路模型提取方法[J]. 中国科学院上海天文台年刊, 2012(1):66-73.
[2] 徐鑫, 张波, 徐辉, 等. S 频段 pHEMT 双通道低噪声放大器芯片的设计[J]. 微波学报, 2015(01):83-87.
[3] 程远垚, 宋树祥, 蒋品群. 2.4 GHz CMOS 低噪声放大器设计[J]. 广西师范大学学报 (自然科学版), 2016,34(03): 7-13.
[4] 郑远, 吴键, 艾萱, 等. 采用电流复用技术的 8mm 频段低噪声放大器[J]. 固体电子学研究与进展, 2013, 33(2): 124-129.
[5] Jhon H S, Jeon J, Kang M. Extremely low power LNA biased with 0.25-V drain-to-source voltage for 3-to-5 GHz UWB-IR application[J]. Microelectronics Journal, 2017, 61(1): 1-5.
[6] 李远鹏, 魏洪涛, 刘永强. 一款宽带低噪声放大器MMIC[J]. 半导体技术, 2016, 41(04):276-279.
[7] 曹杰杰, 李斌. 一种pHEMT小信号等效电路模型提取方法[J]. 中国科学院上海天文台年刊, 2012(1):66-73.