CF_4和O_2等离子体刻蚀改善氮化硅薄膜形貌研究
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摘要
探讨PA工艺因介电层高低差发生金属线路内部断裂的改善方案。以不同光刻条件和刻蚀条件为基础,对介电层(Si3N4)进行ICP刻蚀。研究表明,增加曝光焦距,刻蚀完的侧壁倾斜角改变不大;而光刻胶对氮化硅的刻蚀选择比越高,刻蚀完氮化硅侧壁斜角变化越大。当光刻胶对氮化硅的刻蚀选择比为2.4时,刻蚀完氮化硅的侧壁斜角可控制在45°～65°。
This paper is a mechanism discussion of improvement solution for metal circuit cracking which caused by the difference height of dielectric layer in PA process. The dielectric layer(Si3 N4)ICP etching is base on different lithography and etching conditions. The result shows that increasing the exposure focus, the variation of bevel angle is almost unchanged after etched; but the raise huge changing under the high selectivity ratio of photoresist to silicon nitride, when the etching selectivity ratio of photo resist to silicon nitride is 2.4, the silicon nitride profile angle can be controlled in 45°～ 65°.
This paper is a mechanism discussion of improvement solution for metal circuit cracking which caused by the difference height of dielectric layer in PA process. The dielectric layer(Si3 N4)ICP etching is base on different lithography and etching conditions. The result shows that increasing the exposure focus, the variation of bevel angle is almost unchanged after etched; but the raise huge changing under the high selectivity ratio of photoresist to silicon nitride, when the etching selectivity ratio of photo resist to silicon nitride is 2.4, the silicon nitride profile angle can be controlled in 45°～ 65°.
引文
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[2]赵毅红,陈荣发,刘伯实.Si3N4薄膜的成分与结构研究[J].真空,2004(04):71-73.
[3]肖方,汪辉,罗仕洲.氮化硅湿法蚀刻中热磷酸的蚀刻率[J].半导体技术,2007(10):847-850.
[4]Ying WANG,Lero LUO.Ultrahigh-Selectivity Silicon Nitride Etch Process Using An Inductively Coupled Plasma Source[J].American Vacuum Society,1998,16(3):1582-1587.
[5]Baris Fidan,Rasen I G,Tyler Parent.MultiVariable Adaptive Control of CF4-O2Plasma Etching of Silicon Nitride Thin Films[C].Proceedings of the American Control Conference.2001:1280-1285.
[6]赵智昊.感应耦合等离子体刻蚀及应用研究[D].广东:华南师范大学,2003.
[7]樊中朝,余金中,陈少武.ICP刻蚀技术及其在光电子器件制作中的应用[J].微细加工技术,2003(02):21-28.
[8]邓其明.PECVD氮化硅薄膜的制备工艺及仿真研究[D].四川:电子科技大学,2010.