摘要
设计了一种Si基片上的Al线栅偏振器,在Al线栅和Si基片间引入一层低折射率SiO介质层,适用于3.0~5.0μm的中波红外波段。采用有限时域差分(FDTD)方法,对SiO介质层和金属线栅材料(Al,Au,Ag,Cu和Rh)分别进行了优化。SiO介质层的引入削弱了Al线栅和Si基片之间界面上激发的表面等离子体激元,横磁(TM)偏振光的透过率提高,横电(TE)偏振光的反射增强,消光比上升。对Al,Au,Ag,Cu和Rh五种金属线栅材料分析表明,Al是最合适的材料。当SiO介质层厚度为300 nm、线栅周期为400 nm和占空比为0.5时,Al线栅偏振器在4.0μm波长处的TM偏振光的透过率达到94.8%,消光比为28.3 dB,在3.0~5.0μm波段具有良好的偏振性能。
An Al wire-grid polarizer for the mid-infrared band of 3.0-5.0μm was designed with a SiO dielectric layer with low refractive index inserted between Al wire-grid and Si substrate.The SiO dielectric layer and metal wire-grid materials(Al,Au,Ag,Cu and Rh)were optimized by the finite-difference time-domain(FDTD)method.The surface plasmon polaritons at the interface between Al wire-grid and Si substrate are weakened by the introduction of the SiO dielectric layer,leading to the improvement in the transmittance of transverse magnetic(TM)polarized light and the increases of the reflection of transverse electric(TE)polarized light and extinction ratio.The analyses of different metal wire-grid materials(Al,Au,Ag,Cu and Rh)show that Al is the most appropriate material.When the thickness of the SiO dielectric layer is 300 nm,the period of the wire-grid is 400 nm and the duty cycle is 0.5,the TM polarized light transmittance and extinction ratio of the Al wire-grid polarizer are 94.8% and 28.3 dB at the wavelength of4.0μm,respectively.The Al wire-grid polarizer has excellent polarization performance in the wavelength range of 3.0-5.0μm.
引文
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