硅-玻璃-硅阳极键合机理及力学性能
详细信息    查看全文 | 推荐本文 |
  • 英文篇名:Mechanism and mechanical property of Si-glass-Si anodic bonding process
  • 作者:陈大明 ; 胡利方 ; 时方荣 ; 孟庆森
  • 英文作者:CHEN Daming;HU Lifang;SHI Fangrong;MENG Qinsen;Department of Materials Science and Engineering, Taiyuan University of Technology;Shanxi Key Laboratory of Advanced Magnesium-based Materials, Taiyuan University of Technology;
  • 关键词:阳极键合 ; 硅-玻璃-硅 ; 电子封装 ; 键合强度
  • 英文关键词:anodic bonding;;Si-glass-Si;;electronic packaging;;bonding strength
  • 中文刊名:HJXB
  • 英文刊名:Transactions of the China Welding Institution
  • 机构:太原理工大学新材料界面科学与工程教育部重点实验室;太原理工大学先进镁基材料山西省重点实验室;
  • 出版日期:2019-02-25
  • 出版单位:焊接学报
  • 年:2019
  • 期:v.40
  • 基金:国家自然科学基金资助项目(51405328)
  • 语种:中文;
  • 页:HJXB201902023
  • 页数:6
  • CN:02
  • ISSN:23-1178/TG
  • 分类号:129-133+172
摘要
采用两步法阳极键合技术成功实现了硅-玻璃-硅的连接.两次键合过程中,电流特征有明显差异,第一次键合电流先迅速增大到峰值电流,然后迅速衰减至一较小值.受先形成Na+离子耗尽层的影响,第二次键合电流从峰值电流衰减的过程中,出现二次增大然后衰减的现象.利用扫描电镜对键合界面进行观察,结果表明玻璃两侧界面均键合良好,玻璃表面可观察到大量析出物.利用万能材料试验机对键合强度进行测试,结果表明,界面强度随着键合电压的升高而增大.断裂主要发生在玻璃基体内部靠近第二次键合界面一侧.
        Si-glass-Si was successfully bonded together through a two-step anodic bonding process. The bonding current in each step of the two-step bonding process was investigated, and found to be quite different. The first bonding current decreased quickly to a relatively small value.But for the second bonding step, there were two current peaks,the current varified as decrease-increase-decreased rule. SEM was conducted to investigate the interfacial structure of the Siglass-Si samples. Tensile tests indicated that the fracture occurred at the glass substrate and bonding strength increased with the increment of the bonding voltage.
引文
[1]Wallis G,Pomerantz I.Field assisted glass-metal sealing[J].Journal of Applied Physics,1969,40(10):3946-3949.
    [2]Xiong D,Cheng J,Li H,et al.Anodic bonding of glass-ceramics to stainless steel coated with intermediate SiO2 layer[J].Microelectronic Engineering,2010,87(9):1741-1746.
    [3]Joyce R,Singh K,Varghese S,et al.Stress reduction in silicon/oxidized silicon-Pyrex glass anodic bonding for MEMSdevice packaging:RF switches and pressure sensors[J].Journal of Materials Science Materials in Electronics,2014,26(1):411-423.
    [4]Hsu Y W,Chen J Y,Chien H T,et al.New capacitive low-g triaxial accelerometer with low cross-axis sensitivity[J].Journal of Micromechanics&Microengineering,2010,20(5):477-480.
    [5]Gopal R.Fabrication of MEMS xylophone magnetometer by anodic bonding technique using SOI wafer[J].Springer-Verlag,2017,23(1):81-90.
    [6]刘翠荣,孟庆森,胡立方,等.Pyrex玻璃与Kovar合金阳极键合界面微观结构及其形成机制[J].焊接学报,2008,29(2):73-76.Liu Cuirong,Meng Qingsen,Hu Lifang,et al.Microstructure and bonding mechanism of anodic bonded interface between Pyrex glass and Kovar alloy[J].Transactions of the China Welding Institution,2008,29(2):73-76.
    [7]Yang C R,Wu J W,Chang L Y.Design and implementation of a novel conical electrode for fast anodic bonding[J].Journal of Micromechanics&Microengineering,2014,24(10):105003.
    [8]Tang J,Cai C,Ming X,et al.Morphology and stress at siliconglass interface in anodic bonding[J].Applied Surface Science,2016,387:139-148.
    [9]阴旭,刘翠荣,杜超,等.无机填料对高分子固体电解质与金属铝键合性能的影响[J].焊接学报,2015,136(11):37-40.Yin Xu,Liu Cuirong,Du Chao,et al.Solid electrolyte and anodic properties of the polymer Al[J].Transactions of the China Welding Institution,2015,136(11):37-40.
    [10]Daschner R,Baur H,Pfau T.Triple stack glass-to-glass anodic bonding for optogalvanic spectroscopy cells with electrical feedthroughs[J].Applied Physics Letters,2014,105(4):041107-041107-4.
    [11]秦会峰,孟庆森.玻璃/铝/玻璃三层结构阳极键合机理分析[J].兵器材料科学与工程,2012,35(1):32-34.Qin Huifeng,Meng Qingsen.Mechanism analysis of anodic bonding between glass/aluminum/glass layer[J].Ordnance Material Science and Engineering,2012,35(1):32-34.
    [12]陆春意.基于电流控制的阳极键合工艺方法及实验研究[D].苏州:苏州大学,2015.
    [13]Albaugh K B,Rasmussen D H.Rate processes during anodic bonding[J].Journal of the American Ceramic Society,1992,75(75):2644-2648.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700