Ni(W)Si/Si肖特基势垒二极管电学特性研究
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摘要
首次提出在Ni中掺入夹层W的方法来提高NiSi的热稳定性。具有此结构的薄膜,经600~800℃快速热退火后,薄层电阻保持较低值,小于2Ω/。经Raman光谱分析表明,薄膜中只存在NiSi相,而没有NiSi2生成。Ni(W)Si的薄层电阻由低阻转变为高阻的温度在800℃以上,比没有掺W的镍硅化物转变温度的上限提高了100℃。Ni(W)Si/Si肖特基势垒二极管能够经受650~800℃不同温度的快速热退火,肖特基接触特性良好,肖特基势垒高度为0.65 eV,理想因子接近于1。
In the paper, a novel technique of adding a thin W interlayer in the nickel film is at first time proposed for better thermal stability of nickel silicide. After RTA temperature reaches about 600~800 ℃, Ni(W)Si film exhibits low sheet resistances of less than 2 Ω/□. Raman spectral analysis shows that there exists only NiSi phase and no NiSi2 phase in the Ni(W)Si film. The transformation temperature from low resistance phase to high resistance phase increases to 800 ℃ at least, 100 ℃ higher than that of NiSi. The electrical properties of fabricated Ni(W)Si/Si Schottky Barrier Diode is satisfactory. The barrier height and the ideal factor of the devices are about 0.65 e V and close to 1. It further proves that the presence of W element in Nickel silicide is effective in promoting thermal stability and electrical properties of Nickel monosilicide.
In the paper, a novel technique of adding a thin W interlayer in the nickel film is at first time proposed for better thermal stability of nickel silicide. After RTA temperature reaches about 600~800 ℃, Ni(W)Si film exhibits low sheet resistances of less than 2 Ω/□. Raman spectral analysis shows that there exists only NiSi phase and no NiSi2 phase in the Ni(W)Si film. The transformation temperature from low resistance phase to high resistance phase increases to 800 ℃ at least, 100 ℃ higher than that of NiSi. The electrical properties of fabricated Ni(W)Si/Si Schottky Barrier Diode is satisfactory. The barrier height and the ideal factor of the devices are about 0.65 e V and close to 1. It further proves that the presence of W element in Nickel silicide is effective in promoting thermal stability and electrical properties of Nickel monosilicide.
引文
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[3]P S Lee,K L Pey,D Mangelinck,J Ding,D Z Chi and L Chan.New Salicidation Technology With Ni(Pt)Alloy for MOSFETs[J].IEEE ELECTRON DEVICES LETTERS,2001,22(12):568-570.
[4]P S Lee,K L Pey,D Mangelinck,J Ding,D Z Chi and L Chan.Improved Ni Si Salicide Process Using Presilicide N2+Implant for MOSFETs[J].IEEE ELECTRON DEVICES LETTERS,2000,21(12):566-568.
[2]D Mangelinck,J Y Dai,J S Pan,S K Lahiri.Enhancement of thermal stability of Ni Si film on(100)Si and(111)Si by Pt addition[J].APPLIED PHYSICS LETTERS,1999,75(12).
[3]P S Lee,K L Pey,D Mangelinck,J Ding,D Z Chi and L Chan.New Salicidation Technology With Ni(Pt)Alloy for MOSFETs[J].IEEE ELECTRON DEVICES LETTERS,2001,22(12):568-570.
[4]P S Lee,K L Pey,D Mangelinck,J Ding,D Z Chi and L Chan.Improved Ni Si Salicide Process Using Presilicide N2+Implant for MOSFETs[J].IEEE ELECTRON DEVICES LETTERS,2000,21(12):566-568.