高纯贵金属靶材在半导体制造中的应用与制备技术
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摘要
高纯Au、Ag、Pt、Ru贵金属及其合金溅射靶材是半导体PVD工艺制程中的溅射源材料,广泛用于半导体制造工艺中,成为保证半导体器件性能和发展半导体技术必不可少及不可替代的材料。材料的高纯化、高性能贵金属及其合金靶材的制备(金属熔铸、热机械处理、粉末烧结、焊接等)以及贵金属靶材残靶及加工余料残屑的提纯回收利用是研究发展的重点,以实现贵金属靶材产品的高效增值。
High-purity Au,Ag,Pt,Ru precious metals and alloys material targets make a very important role in semiconductor manufacturing.Purifying of raw materials,fabricating of high performance target(melting casting,thermal mechanical processing,powder sintering and bonding,etc.),recycling and refining of spent precious materials are important processes for precious metal target product development and application.
High-purity Au,Ag,Pt,Ru precious metals and alloys material targets make a very important role in semiconductor manufacturing.Purifying of raw materials,fabricating of high performance target(melting casting,thermal mechanical processing,powder sintering and bonding,etc.),recycling and refining of spent precious materials are important processes for precious metal target product development and application.
引文
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[11]张宏亮,李继亮,李代颖.贵金属钌粉制备技术及应用研究进展[J].船电技术,2012,32(8):54-56.Zhang Hongliang,Li Jiliang,Li Daiying.The preparation and application of ruthenium powder[J].Marine Electric&Electronic Technology,2012,32(8):54-56.
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[2]张永俐.半导体微电子技术用贵金属材料的应用与发展[J].贵金属,2005,26(4):49-57.Zhang Yongli.Application and development of precious metal materials for semiconductor-microelectronic technology[J].Precious Metals,2005,26(4):49-57.
[3]尚再艳,江轩,李勇军,等.集成电路制造用溅射靶材[J].稀有金属,2005,29(4):475-477.Shang Zaiyan,Jiang Xuan,Li Yongjun,et al.Sputtering targets used in integrated circuit[J].Rare Metals,2005,29(4):475-477.
[4]张利春,高玉芝,宁宝俊,等.功率晶体管背面金属化研究[J].北京大学学报:自然科学版,1993,29(1):87-95.Zhang Lichun,Gao Yuzhi,Ning Baojun,et al.Investigation of power transistor back metallization[J].Acta Scientiarum Naturalium Universitatis Pekinensis,1993,29(1):87-95.
[5]杨碧梧.铂-镍硅化物/硅接触肖特基势垒的形成方法[J].半导体技术,1995,6(3):18-21.
[6]Pey K L,Lee P S,Mangelinck D.Ni(Pt)alloy silicidation on(100)Si and poly-silicon lines[J].Thin Solid Films,2004,462:137-145.
[7]李骥.RuTi基单层薄膜作为铜互连扩散阻挡层研究[D].上海:复旦大学,2010.
[8]杨邦朝,胡永达,崔红玲.溅射靶材的应用及发展趋势[J].真空,2002(1):1-4.Yang Bangchao,Hu Yongda,Cui Hongling.Trend in development and applications of sputtering target materials[J].Vacuum,2002(1):1-4.
[9]Vikram Pavate,Murali Abburi,Sunny Chiang,et al.Correlation between aluminum alloy sputtering target metallurgical characteristics,arc initiation,and in-film defect intensity[C].Proceeding of SPIE,Austin,1997,3214:42-47.
[10]赵嘉学,金凡亚.常见磁控溅射靶材利用率及其计算方法的探讨[J].核聚变与等离子体物理,2007,27(1):66-72.Zhao Jiaxue,Jin Fanya.Investigation of utilization ratio and calculating method of familiar magnetron sputtering targets[J].Nuclear Fusion and Plasma Physics,2007,27(1):66-72.
[11]张宏亮,李继亮,李代颖.贵金属钌粉制备技术及应用研究进展[J].船电技术,2012,32(8):54-56.Zhang Hongliang,Li Jiliang,Li Daiying.The preparation and application of ruthenium powder[J].Marine Electric&Electronic Technology,2012,32(8):54-56.
[12]吴晓峰,汪云华,范兴祥,等.贵金属提取冶金技术现状及发展趋势[J].贵金属,2007,28(4):63-68Wu Xiaofeng,Wang Yunhua,Fan Xingxiang,et al.Present research status and development in extractive metallurgy of precious metals[J].Precious Metals,2007,28(4):63-68.