离子源在太阳电池减反射膜沉积中的应用研究
|
摘要
在无烘烤条件下,使用离子源辅助沉积技术进行空间用三结砷化镓太阳电池(GaInP/GaInAs/Ge)的减反射膜沉积。对比不同离子源参数下的减反射膜薄膜折射率、太阳电池表面反射率、短路电流及转换效率增益,分析出当阳极电压为150～180 V、束流为5～6 A时可获得较好的增益效果。通过太阳电池外量子效率测试发现,由辅助沉积粒子所引起的电池结构损伤主要表现为顶结电池的光谱响应下降。
The anti-reflection coating of three junction solar cell(GaInP/GaInAs/Ge) is deposited by ion source assistance without heating. Setting of ion source influences the refractive index of anti-reflection coating. The reflectance, short current and efficiency enhancement of solar cell are also measured after coating deposition. When anode voltage is 150 V to 180 V and emission current is 5 A to 6 A, the efficiency enhancement of solar cell is optimal. According to the result of external quantum efficiency(EQE), structural damage of solar cell caused by ion source occurs at top junction.
The anti-reflection coating of three junction solar cell(GaInP/GaInAs/Ge) is deposited by ion source assistance without heating. Setting of ion source influences the refractive index of anti-reflection coating. The reflectance, short current and efficiency enhancement of solar cell are also measured after coating deposition. When anode voltage is 150 V to 180 V and emission current is 5 A to 6 A, the efficiency enhancement of solar cell is optimal. According to the result of external quantum efficiency(EQE), structural damage of solar cell caused by ion source occurs at top junction.
引文
[1] SUN L, ZHANG M, FANG X, et al. Recent progress of high-efficiency III-V multi-junction solar cells[C]//Photovoltaic Specialists Conference. Tampa, FL, USA:IEEE, 2013:2832-2834.
[2]孙希鹏,肖志斌,杜永超.新型砷化镓太阳电池的宽带减反射膜设计[J].光学学报, 2016, 4:329-336.
[3]唐晋发,顾培夫.现代光学薄膜技术[M].浙江:杭州大学出版社, 2006:61-66.
[4] NIEDERWALD H. Low-temperature deposition of optical coatings using ion assistance[J]. Thin Solid Films, 2000, 377/378:21-26.
[5]赵乃石,张本义,周世敦.考夫曼离子源物理基础及其应用[J].真空, 1988, 3:64-69.
[6]潘永强,朱昌,方勇,等.用于离子束辅助镀膜的两种模式端部霍尔离子源的比较[J].真空, 2004, 41(5):38-41.
[7] KENNEDY S R, BRETT M J. Porous broadband antireflection coating by glancing angle deposition[J]. Applied Optics, 2003, 42(22):4573-4579.
[8]欧伟,郄毅鹏,铁剑锐,等. IMM四结太阳电池辐照实验方法研究[J].电源技术, 2015, 39(10):2179-2181.
[9]刘汉英,肖志斌,张岩松,等. GJB 7392-2011空间用三结砷化镓太阳电池通用规范[S].北京:总装备部军标出版发行部,2012.
[2]孙希鹏,肖志斌,杜永超.新型砷化镓太阳电池的宽带减反射膜设计[J].光学学报, 2016, 4:329-336.
[3]唐晋发,顾培夫.现代光学薄膜技术[M].浙江:杭州大学出版社, 2006:61-66.
[4] NIEDERWALD H. Low-temperature deposition of optical coatings using ion assistance[J]. Thin Solid Films, 2000, 377/378:21-26.
[5]赵乃石,张本义,周世敦.考夫曼离子源物理基础及其应用[J].真空, 1988, 3:64-69.
[6]潘永强,朱昌,方勇,等.用于离子束辅助镀膜的两种模式端部霍尔离子源的比较[J].真空, 2004, 41(5):38-41.
[7] KENNEDY S R, BRETT M J. Porous broadband antireflection coating by glancing angle deposition[J]. Applied Optics, 2003, 42(22):4573-4579.
[8]欧伟,郄毅鹏,铁剑锐,等. IMM四结太阳电池辐照实验方法研究[J].电源技术, 2015, 39(10):2179-2181.
[9]刘汉英,肖志斌,张岩松,等. GJB 7392-2011空间用三结砷化镓太阳电池通用规范[S].北京:总装备部军标出版发行部,2012.