一种可变门极电阻的大功率IGBT驱动
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摘要
通过分析大功率IGBT寄生参数及主功率回路寄生参数对IGBT驱动的影响,提出了一种基于可变门极电阻的驱动电路,提高了驱动模块的产品兼容性,实现了驱动器对IGBT开关特性的精确控制,有效抑制开关过程中由于di/dt引起的电压尖峰。最后在Sabor中搭建了型号为FZ1500R33HE3的大功率IGBT的仿真模型,并进行仿真分析;通过搭建实物平台进行了双脉冲实验。仿真和实验结果表明,该驱动电路具有可行性。
By analyzing the parasitic parameters of high power IGBT and main power circuit,a novel driving circuit based on the variable gate resistances is put forward.This method can improve the compatibility of the drive module,realize accurate control of the drive of IGBT switching characteristics,and effectively reduce the voltage spikes through switching process due to the di/dt.In the end,the simulation model of IGBT is built in Sabor,and a double pulse experiment is completed based on the platform of FZ1500R33HE3.Simulation and experiment results show the feasibility of the driving circuit.
By analyzing the parasitic parameters of high power IGBT and main power circuit,a novel driving circuit based on the variable gate resistances is put forward.This method can improve the compatibility of the drive module,realize accurate control of the drive of IGBT switching characteristics,and effectively reduce the voltage spikes through switching process due to the di/dt.In the end,the simulation model of IGBT is built in Sabor,and a double pulse experiment is completed based on the platform of FZ1500R33HE3.Simulation and experiment results show the feasibility of the driving circuit.
引文
[1]佘烁杰,杜倩倩,谢雪松,等.IGBT的进展、应用及其可靠性研究[C]//2010第十五届可靠性学术年会论文集.2010.
[2]Sanchezruiz-Ruiz A,Mazuela M,Alvarez S,et al.Medium voltage-high power converter topologies comparison procedure,for a 6.6 kV drive application using 4.5 kV IGBT modules[J].IEEE Transactions on Industrial Electronics,2012,59(3):1462-1476.
[3]Grbovic P J.An IGBT gate driver for feed-forward control of turn-on losses and reverse recovery current[J].IEEE Transactions on Power Electronics,2008,23(2):643-652.
[4]Park S,Jahns T M.Flexible dv/dt and di/dt control method for insulated gate power switches[J].IEEE Transactions on Industry Applications,2001,39(3):657-664.
[5]雷明,程善美,于孟春,等.基于变门极电阻的IGBT软关断实现[J].电力电子技术,2012,46(12):46-48.
[6]丁强,何湘宁.采用Saber模型研究IGBT工作极限特性[J].电工技术学报,2001,16(2):65-59.
[7]蒋玉想,李征.基于双脉冲的IGBT及驱动电路测试方法[J].电子技术,2012(7):78-80.
[2]Sanchezruiz-Ruiz A,Mazuela M,Alvarez S,et al.Medium voltage-high power converter topologies comparison procedure,for a 6.6 kV drive application using 4.5 kV IGBT modules[J].IEEE Transactions on Industrial Electronics,2012,59(3):1462-1476.
[3]Grbovic P J.An IGBT gate driver for feed-forward control of turn-on losses and reverse recovery current[J].IEEE Transactions on Power Electronics,2008,23(2):643-652.
[4]Park S,Jahns T M.Flexible dv/dt and di/dt control method for insulated gate power switches[J].IEEE Transactions on Industry Applications,2001,39(3):657-664.
[5]雷明,程善美,于孟春,等.基于变门极电阻的IGBT软关断实现[J].电力电子技术,2012,46(12):46-48.
[6]丁强,何湘宁.采用Saber模型研究IGBT工作极限特性[J].电工技术学报,2001,16(2):65-59.
[7]蒋玉想,李征.基于双脉冲的IGBT及驱动电路测试方法[J].电子技术,2012(7):78-80.