薄膜体声波谐振器的研究与仿真
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摘要
随着5G通信技术的发展,射频前端器件趋向于集成化、微型化,使得薄膜体声波谐振器(FBAR)技术成为通信领域的研究热点之一。该文对FBAR谐振单元选择不同阶数的梯形级联方式,通过射频仿真软件ADS建立MBVD等效电路模型,实验仿真其性能参数输出曲线,设计出频带区间在工信部规划的5G通信频段(4.8～5.0 GHz)标准内的高频窄带滤波器。实验仿真结果表明,所设计的FBAR频带在4.849～4.987 GHz,增加FBAR单元的级联阶数可以提高带外抑制,其插入损耗很小,满足5G通信系统对滤波器的性能参数要求。
With the development of 5 G communication technology, RF front-end devices tend to be integrated and miniaturized, making the film bulk acoustic resonator(FBAR) technology one of the research hotspots in the field of communication. In this article, the trapezoidal cascade method is selected for different order number of FBAR resonant unit, and the MBVD equivalent circuit model is established by using the RF simulation software ADS. The performance parameter output curve of FBAR is simulated by experiment, and a high frequency narrowband filter within the 5 G frequency band(4.8～5.0 GHz) standard planned by the Ministry of Industry and Information Technology is designed. The experimental results show that the designed FBAR frequency band is at the range of 4.849～4.987 GHz. It is found that the increase of cascade order of FBAR unit can significantly improve the out-of-band rejection and the insertion loss is low, which satisfies the performance parameters requirements of the 5 G communication system for the filter.
With the development of 5 G communication technology, RF front-end devices tend to be integrated and miniaturized, making the film bulk acoustic resonator(FBAR) technology one of the research hotspots in the field of communication. In this article, the trapezoidal cascade method is selected for different order number of FBAR resonant unit, and the MBVD equivalent circuit model is established by using the RF simulation software ADS. The performance parameter output curve of FBAR is simulated by experiment, and a high frequency narrowband filter within the 5 G frequency band(4.8～5.0 GHz) standard planned by the Ministry of Industry and Information Technology is designed. The experimental results show that the designed FBAR frequency band is at the range of 4.849～4.987 GHz. It is found that the increase of cascade order of FBAR unit can significantly improve the out-of-band rejection and the insertion loss is low, which satisfies the performance parameters requirements of the 5 G communication system for the filter.
引文
[1] 莫绍孟.薄膜体声波谐振器的分析与设计[D].昆明:昆明理工大学,2008.
[2] RUBY R C,BRADLEY P,OSHMYANSKY Y,et al.Thin film bulk wave acoustic resonators (FBAR) for wireless applications[J].Proceedings of the IEEE Ultrasonics Symposium,2001,1:813-821.
[3] GIRAUD S,BILA S,CHATRAS M,et al.Bulk acoustic wave filter synthesis and optimization for UMTS applications[J].Freq Contr Symp,2009,157(4):890-893.
[4] ZHANG X,XU W C,CHAE J S.Temperature effects on a high Q FBAR in liquid[J].Sens Acuators A:Phys,2009,158(5):466-469.
[5] 徐学良,陆玉姣,杨柳,等.薄膜体声波谐振器的发展现状[J].压电与声光,2017,39(2):163-166.XU Xueliang,LU Yujiao,YANG Liu,et al.The state-of-the-art of film bulk acoustic wasve resonators filter[J].Piezoelectrics & Acoustooptics,2017,39(2)163-166.
[6] 蒋松涛,吴孟强,吴勇,等.薄膜体声波滤波器的材料、设计及应用[J].材料导报,2006,20(11):22-23.
[7] 卞晓磊.新型电调薄膜体声波谐振器(FBAR)研究[D].杭州:浙江大学,2015.
[8] 陈国豪.新型FBAR及传感技术的研究[D].杭州:浙江大学,2016.
[9] AIGNER R.RF-MEMS filters manufactured on silicon:Key facts about BAW technology[C]//Grainau,Germany:Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,IEEE,2003.
[10] 宁金叶.FBAR用AlN薄膜的MOCVD制备[D].成都:电子科技大学,2015.
[11] FELMETSGER V V,LAPTEV P N,TANNER S M.Crystal orientation and stress in AC reactively sputtered AlN films on Mo electrodes for electro-acoustic devices[C]//Beijing,China:IEEE Ultrasonics Symposium Proceeding,2008:2146-2149.
[12] LARSON J,BRADLEY P,WARTENBERG S,et al.Modified Butewrorth-Van Dyke circuit for FBAR resonators and automated measurement system[J].Proceedings of the IEEE Ultrasonics Symposium,2001,1:863-868.
[13] 赵坤丽.S波段窄带带通BAW滤波器设计[D].绵阳:西南科技大学,2017.
[14] LAKIN K M,KLINE G R,MCCARRON K T.High-Q microwave acoustic resonators and filters[J].Microwave Theory and Techniques,1993,41(12):2139-2146.
[15] 蔡洵,高阳,黄振华,等.薄膜体声波谐振器的测试与表征[J].微纳电子技术,2015,52(10):661-664.
[16] 夏熙,许晓婷.一种宽负载的 LLC 谐振变换器的优化控制方法[J].重庆理工大学学报(自然科学),2017(6):166-170.XIA Xi,XU Xiaoting.An optimized control for LLC resonant converter with wide load range[J].Journal of Chongqing University of Technology(Natural Science),2017(6):166-170.
[2] RUBY R C,BRADLEY P,OSHMYANSKY Y,et al.Thin film bulk wave acoustic resonators (FBAR) for wireless applications[J].Proceedings of the IEEE Ultrasonics Symposium,2001,1:813-821.
[3] GIRAUD S,BILA S,CHATRAS M,et al.Bulk acoustic wave filter synthesis and optimization for UMTS applications[J].Freq Contr Symp,2009,157(4):890-893.
[4] ZHANG X,XU W C,CHAE J S.Temperature effects on a high Q FBAR in liquid[J].Sens Acuators A:Phys,2009,158(5):466-469.
[5] 徐学良,陆玉姣,杨柳,等.薄膜体声波谐振器的发展现状[J].压电与声光,2017,39(2):163-166.XU Xueliang,LU Yujiao,YANG Liu,et al.The state-of-the-art of film bulk acoustic wasve resonators filter[J].Piezoelectrics & Acoustooptics,2017,39(2)163-166.
[6] 蒋松涛,吴孟强,吴勇,等.薄膜体声波滤波器的材料、设计及应用[J].材料导报,2006,20(11):22-23.
[7] 卞晓磊.新型电调薄膜体声波谐振器(FBAR)研究[D].杭州:浙江大学,2015.
[8] 陈国豪.新型FBAR及传感技术的研究[D].杭州:浙江大学,2016.
[9] AIGNER R.RF-MEMS filters manufactured on silicon:Key facts about BAW technology[C]//Grainau,Germany:Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,IEEE,2003.
[10] 宁金叶.FBAR用AlN薄膜的MOCVD制备[D].成都:电子科技大学,2015.
[11] FELMETSGER V V,LAPTEV P N,TANNER S M.Crystal orientation and stress in AC reactively sputtered AlN films on Mo electrodes for electro-acoustic devices[C]//Beijing,China:IEEE Ultrasonics Symposium Proceeding,2008:2146-2149.
[12] LARSON J,BRADLEY P,WARTENBERG S,et al.Modified Butewrorth-Van Dyke circuit for FBAR resonators and automated measurement system[J].Proceedings of the IEEE Ultrasonics Symposium,2001,1:863-868.
[13] 赵坤丽.S波段窄带带通BAW滤波器设计[D].绵阳:西南科技大学,2017.
[14] LAKIN K M,KLINE G R,MCCARRON K T.High-Q microwave acoustic resonators and filters[J].Microwave Theory and Techniques,1993,41(12):2139-2146.
[15] 蔡洵,高阳,黄振华,等.薄膜体声波谐振器的测试与表征[J].微纳电子技术,2015,52(10):661-664.
[16] 夏熙,许晓婷.一种宽负载的 LLC 谐振变换器的优化控制方法[J].重庆理工大学学报(自然科学),2017(6):166-170.XIA Xi,XU Xiaoting.An optimized control for LLC resonant converter with wide load range[J].Journal of Chongqing University of Technology(Natural Science),2017(6):166-170.