Al_2O_3掺杂BaTi_(0.85)Sn_(0.15)O_3陶瓷的制备及性能表征
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摘要
通过传统固相二次烧结法来制备xwt%Al_2O_3(x=0、1.0、1.5)/BaTi_(0.85)Sn_(0.15)O_3(BTS)陶瓷。研究了掺杂不同含量Al_2O_3对BTS陶瓷的微观结构、介电性能及挠曲电性能的影响。结果表明,掺杂Al_2O_3的BTS陶瓷不改变陶瓷的晶体结构,仍为标准钙钛矿结构晶型;Al_2O_3的掺入能够有效降低晶粒尺寸,具有明显的细晶作用。随着Al_2O_3含量的增大,Al_2O_3/BTS陶瓷的介电常数减小,介电损耗得到明显改善,居里峰逐渐宽化且向温度高的方向偏移。Al_2O_3/BTS陶瓷的挠曲电系数随着Al_2O_3含量的增加和测试环境温度的升高均减小。此外,Al_2O_3/BTS陶瓷的挠曲电系数和介电常数之间存在一种近线性关系,但当温度非常接近于居里温度时,这种线性关系减弱。
xwt% Al_2O_3(x=0,1.0,1.5)/BaTi_(0.85)Sn_(0.15)O_3(BTS)ceramics were prepared by the traditional secondary solid state reaction method.And the effects of BTS ceramics doped with Al_2O_3 on the microstructure,dielectricity and flexoelectricity were studied.The results show that BTS ceramics doped with Al_2O_3 are still the standard perovskite crystal structure,Al_2O_3 reduces the size of the grain effectively.When Al_2O_3 doping amount increases,the dielectric constant of Al_2O_3/BTS ceramics decreases,the dielectric loss of Al_2O_3/BTS ceramics decreases,the Curie peaks broaden and shift to the high temperature direction.With the increase of Al_2O_3 content and test temperature,the flexoelectric coefficient of Al_2O_3/BTS ceramics decreases.And there is a near linear relationship between the coefficient of deflection and dielectric constant of Al_2O_3/BTS ceramics,but when the temperature is very close to the Curie temperature,the linear relationship is weakened.
xwt% Al_2O_3(x=0,1.0,1.5)/BaTi_(0.85)Sn_(0.15)O_3(BTS)ceramics were prepared by the traditional secondary solid state reaction method.And the effects of BTS ceramics doped with Al_2O_3 on the microstructure,dielectricity and flexoelectricity were studied.The results show that BTS ceramics doped with Al_2O_3 are still the standard perovskite crystal structure,Al_2O_3 reduces the size of the grain effectively.When Al_2O_3 doping amount increases,the dielectric constant of Al_2O_3/BTS ceramics decreases,the dielectric loss of Al_2O_3/BTS ceramics decreases,the Curie peaks broaden and shift to the high temperature direction.With the increase of Al_2O_3 content and test temperature,the flexoelectric coefficient of Al_2O_3/BTS ceramics decreases.And there is a near linear relationship between the coefficient of deflection and dielectric constant of Al_2O_3/BTS ceramics,but when the temperature is very close to the Curie temperature,the linear relationship is weakened.
引文
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[21]张磊,钟维烈,彭毅萍,等.钛酸锶钡的铁电相变与晶胞体积的关联[J].物理学报,2000,49(7):1371-1376.ZHANG L,ZHONG W L,PENG Y P,et al.A correlation between the ferroelectric phase transition and the cell volume in barium strontium titanate[J].Acta Physica Sinica,2000,49(7):1371-1376(in Chinese).
[22]张鹤凌,梁辉,徐廷献.Fe2O3的掺杂对BaSn0.11Ti0.89O3陶瓷介电性能的影响[J].压电与声光,2003,25(4):312-314.ZHANG H L,LIANG H,XU T X.Influence of Fe2O3doping on dielectric properties of BaSn0.11Ti0.89O3based ceramic[J].Piezoelectric and Acoustooptics,2003,25(4):312-314(in Chinese).
[23]CATALAN G,SINNAMON L J,GREGG J M.The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films[J].Journal of Physics:Condensed Matter,2004,16(13):2253-2264.
[24]HONG J W,VANDERBILT D.First-principles theory and calculation of flexoelectricity[J].Physical Review B,2013,88(17):174107.
[25]BIANCOLI A,FANCHER C M,JONES J L,et al.Breaking of macroscopic centric symmetry in paraelectric phases of ferroelectric materials and implications for flexoelectricity[J].Nature Materials,2015,14(2):224-229.
[2]HUANG W,KWON S R,ZHANG S,et al.A trapezoidal flexoelectric accelerometer[J].Journal of Intelligent Material Systems and Structures,2014,25(3):271-277.
[3]KWON S R,HUANG W,ZHANG S,et al.Flexoelectric sensing using a multilayered barium strontium titanate structure[J].Smart Materials and Structures,2013,22(11):115017.
[4]MA W,CROSS L E.Observation of the flexoelectric effect in relaxor Pb(Mg1/2Nb2/3)O3ceramics[J].Applied Physics Letters,2001,78(19):2920-2921.
[5]MA W,CROSS L E.Flexoelectric of barium titanate[J].Applied Physics Letters,2006,88(23):232902-232903.
[6]吴再辉,秦珊,白帆,等.阻抗渐变高介电钛酸钡/聚酰亚胺复合薄膜的设计与制备[J].复合材料学报,2016,33(12):2712-2717.WU Z H,QING S,BAI F,et al.Design and fabrication of high-dielectric BaTiO3/polyimide composite film with impedance gradient[J].Acta Materiae Compositae Sinica,2016,33(12):2712-2717(in Chinese).
[7]IANCULESCU A,BERGER D,VIVIANI M,et al.Investigation of Ba1-xSrxTiO3ceramics prepared from powders synthesized by the modified Pechini route[J].Journal of the European Ceramic Society,2007,27(13-15):3655-3658.
[8]BEDNORZ J G,MULLER K A.Sr1-xCaxTiO3:An XY quantum ferroelectric with transition to randomness[J].Physical Review Letters,1984,52(25):2289-2292.
[9]QI J Q,LIU B B.Dielectric properties of barium zirconate titanate(BZT)ceramics tailored by different donors for high voltage applications[J].Solid State Sciences,2012,14(10):1520-1524.
[10]王丽娟,高玫香,谢遵园,等.BaTiO3@Cu核-壳复合粒子电/磁双响应性能[J].复合材料学报,2017,34(4):844-849.WANG L J,GAO M X,XIE Z Y,GAO L X.Electromagnetic response of BaTiO3@Cucore-shell composite particles[J].Acta Materiae Compositae Sinica,2017,34(4):844-849(in Chinese).
[11]汪宁,张波萍,赵磊,等.(Ba1-xCax)(Ti0.94Zr0.056Sn0.004)O3无铅压电陶瓷电学性能和Curie温度的协同调控[J].硅酸盐学报,2016,44(12):1686-1693.WANG N,ZHANG B P,ZHAO L,et al.Optimization of electrical properties and curie temperature of(Ba1-xCax)(Ti0.94Zr0.056Sn0.004)O3lead-free piezoelectric ceramics[J].Journal of the Chinese Ceramic Society,2016,44(12):1686-1693(in Chinese).
[12]殷佳,黄新友,岳振星,等.Nd2O3掺杂对BCZT无铅压电陶瓷性能和结构的影响[J].电子元件与材料,2016,35(2):22-25.YIN J,HUANG X Y,YUE Z X,et al.Influence of Nd2O3doping on the properties and structure of BCZT lead-free piezoelectric ceramics[J].Electronic Components and Materials,2016,35(2):22-25(in Chinese).
[13]CUI Y R,LIU X Y,YUAN C L,et al.Preparation and properties of Sm2O3doped(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3lead-free piezoelectric ceramics[J].Journal of Inorganic Materials,2012,27(7):731-734.
[14]SHU L L,WEI X Y,JIN L,et al.Enhanced direct flexoelectricity in paraelectric phase of Ba(Ti0.87Sn0.13)O3ceramics[J].Applied Physics Letters,2013,102(15):152904.
[15]张茜,董桂霞,吕易楠,等.ZnAl2O4和La2O3对Ca0.61Nd0.26TiO3-MgTiO3复合陶瓷介电性能的影响[J].复合材料学报,2017,34(4):859-864.ZHANG X,DONG G X,LV Y N,et al.Effect of ZnAl2O4and La2O3 on dielectric properties of Ca0.61 Nd0.26 TiO3-MgTiO3composite ceramics[J].Acta Materiae Compositae Sinica,2017,34(4):859-864(in Chinese).
[16]林榕,黄瑞南,胡勇,等.MgTiO3掺杂对BST基电容器陶瓷介电性能的影响[J].电子元件与材料,2015,34(10):23-26.LIN R,HUANG R N,HU Y,et al.Influence of MgTiO3doping on dielectric properties of BST based capacitor ceramics[J].Electronic Componets and Materials,2015,34(10):23-26(in Chinese).
[17]沈振江,邴丽娜.固相法烧结温度对钛酸钡陶瓷介电性能的影响[J].硅酸盐通报,2015,34(2):320-324.SHE Z J,BING L N.Influence of sintering temperature on the dielectric properties of barium titanate ceramics synthesized by solid state reaction[J].Bulletin of the Chinese Ceramic Society,2015,34(2):320-324(in Chinese).
[18]吕静,党智敏.低热膨胀系数纳米碳化硅/聚酞亚胺复合薄膜的制各与性能[J].复合材料学报,2011,28(6):41-45.LV J,DANG Z M.Preparation and properties of nano SiC/polyimide composite films with low thermal expansion characteristic[J].Acta Materiae Compositae Sinica,2011,28(6):41-45(in Chinese).
[19]何伟,李斌,张其土.低介电常数无铅高压陶瓷电容器材料[J].材料科学与工程学报,2008,26(2):281-283.HE W,LI B,ZHANG Q T.Lead-free ceramics capacitor materials of low dielectric constant and high voltage[J].Journal of Materials Science&Engineering,2008,26(2):281-283(in Chinese).
[20]陈维,王冲,陈寿田.MgTiO3对SrTiO3-Bi2O3nTiO2系统的微观结构和介电性能的影响[J].西安交通大学学报,1997,31(4):7-11.CHEN W,WANG C,CHEN S T.The influence of microstructure and dielectric property of MgTiO3 in SrTiO3-Bi2O3·nTiO2system[J].Journal of Xi’an Jiaotong University,1997,31(4):7-11(in Chinese).
[21]张磊,钟维烈,彭毅萍,等.钛酸锶钡的铁电相变与晶胞体积的关联[J].物理学报,2000,49(7):1371-1376.ZHANG L,ZHONG W L,PENG Y P,et al.A correlation between the ferroelectric phase transition and the cell volume in barium strontium titanate[J].Acta Physica Sinica,2000,49(7):1371-1376(in Chinese).
[22]张鹤凌,梁辉,徐廷献.Fe2O3的掺杂对BaSn0.11Ti0.89O3陶瓷介电性能的影响[J].压电与声光,2003,25(4):312-314.ZHANG H L,LIANG H,XU T X.Influence of Fe2O3doping on dielectric properties of BaSn0.11Ti0.89O3based ceramic[J].Piezoelectric and Acoustooptics,2003,25(4):312-314(in Chinese).
[23]CATALAN G,SINNAMON L J,GREGG J M.The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films[J].Journal of Physics:Condensed Matter,2004,16(13):2253-2264.
[24]HONG J W,VANDERBILT D.First-principles theory and calculation of flexoelectricity[J].Physical Review B,2013,88(17):174107.
[25]BIANCOLI A,FANCHER C M,JONES J L,et al.Breaking of macroscopic centric symmetry in paraelectric phases of ferroelectric materials and implications for flexoelectricity[J].Nature Materials,2015,14(2):224-229.