基于GaN器件的平衡式逆F类功率放大器的研究与设计
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摘要
针对功率放大器效率低和输入输出端反射损耗较大的缺陷,采用平衡式结构研究了工作于2.6 GHz的逆F类功率放大器,并基于GaN器件CGH40010F设计该放大器验证电路。根据功放管输出寄生参数的等效网络,将负载阻抗转换到封装参考面上,在输出匹配电路中对二、三次谐波进行抑制处理。并且考虑栅源寄生电容对输入信号的影响,在输入拓扑结构中加入二次谐波抑制电路,进一步提高了放大器的效率。同时,在栅漏极偏置电路中,采用扇形微带线代替短路电容,使电路结构更为紧凑。经仿真优化,采用Rogers4350b板材制作该功放电路板。实测表明,饱和输出功率为42.32 d Bm,最大漏极效率为77.91%,最大功率附加效率(power added efficiency,PAE)达到72.16%,输入输出驻波系数(voltage standing wave ratio,VSWR)均小于2。实测结果与仿真数据基本吻合,验证了设计方法的可行性。
In order to deal with low efficiency and large input/output return loss of power amplifier,a 2.6 GHz balanced inverse Class F power amplifier test circuit based on GaN device CGH40010 F was designed. According to the approximated equivalent network of output parasitics,the load impedances are transferred into the package plane,the second and third harmonic are suppressed in the output matching circuit. Taking into account the effect of the gate source parasitic capacitance on the input signal,the second harmonic suppression circuit is added into the input topology to further enhance the efficiency of the power amplifier. Meanwhile,the circuit size is smaller and compact by utilizing microstrip radial stub in the bias circuit. By making simulation and optimization,the power amplifier circuit board is made of Rogers4350 b.The measure results demonstrate that the PA provides saturated output power of 42.32 d Bm with maximum PAE of 72.16% and maximum drain efficiency of 77.91%,input and output standing wave ratio is less than 2. Experimental results are in good agreement with the simulation results,which confirmed feasibility of design methodology.
In order to deal with low efficiency and large input/output return loss of power amplifier,a 2.6 GHz balanced inverse Class F power amplifier test circuit based on GaN device CGH40010 F was designed. According to the approximated equivalent network of output parasitics,the load impedances are transferred into the package plane,the second and third harmonic are suppressed in the output matching circuit. Taking into account the effect of the gate source parasitic capacitance on the input signal,the second harmonic suppression circuit is added into the input topology to further enhance the efficiency of the power amplifier. Meanwhile,the circuit size is smaller and compact by utilizing microstrip radial stub in the bias circuit. By making simulation and optimization,the power amplifier circuit board is made of Rogers4350 b.The measure results demonstrate that the PA provides saturated output power of 42.32 d Bm with maximum PAE of 72.16% and maximum drain efficiency of 77.91%,input and output standing wave ratio is less than 2. Experimental results are in good agreement with the simulation results,which confirmed feasibility of design methodology.
引文
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[15]何强.2.4 GHz逆F类Ga N HEMT功率放大器的实现[J].南京工业职业技术学院学报,2015,15(3):5-8.HE Qiang. Realization of 2.4 GHz Inverse Class-F Ga N HEMT PA[J]. Journal of Nanjing Institute of Industry Technology,2015,15(3):5-8.
[16]尤览,丁瑶,杨光,等.采用寄生补偿的高效率逆F类Ga N HEMT功率放大器[J].微波学报,2011,27(5):50-54.YOU Lan,DING Yao,YANG Guang,et al. A High Efficiency Ga N HEMT Inverse Class-F Power Amplifier Using Parasitic Compensation[J]. Journal of Microwaves,2011,27(5):50-54.
[17]刘长军,黄卡玛,闫丽萍.射频通信电路设计[M].北京:科学出版社,2005:226-235.LIU Changjun,HUANG Kama,YAN Liping. RF Communication Circuits Design[M]. Beijing:Science Press,2005:226-235.
[18]邓向科.基于F类功率放大器的Outphasing发射机研究[D].成都:电子科技大学,2007.DENG Xiangke. Research on Outphasing transmitter based on class F power amplifier[D]. Chengdu:University of Electronic Science and Technology of China,2007.
[2] SAND P,ANDERSSON K. A highly efficient 3.5 GHz inverse class-F Ga N HEMT power amplifier[J]. International Journal of Microwave and Wireless Technologies,2010,2(3-4):317-324.
[3] YOUNG YUN WOO,YOUNGOO YANG,BUMMAN KIM. Analysis and experiments for high-efficiency classF and invere class-F power amplifiers[J]. IEEE Transactions on Microwave Theory and Techniques,2006,54(5):1969-1974.
[4] SHEIKH A,ROFF C,BENEDIKT J,et al. Peak class F and inverse class F drain efficiencies using Si LDMOS in a limited bandwidth design[J]. IEEE Microwave and Wireless Components Letters,2009,19(7):473-475.
[5]郭栋,李梁,窦智童,等.基于新一代半导体Ga N的高效率功率放大器的研制[J].现代电子技术,2014,37(15):83-85.GUO Dong,LI Liang,DOU Zhitong,et al. Development of high efficiency power amplifier based on new generation semiconductor Ga N[J]. Modern Electronics Technique,2014,37(15):83-85.
[6]徐涛,唐厚鹭,王昭笔,等. C波段Ga N HEMT内匹配功率放大器[J].无线电工程,2017,47(3):54-57.XU Tao,TANG Houlou,WANG Zhaobi,et al. C-band Ga N HEMT Internally-matched Power Amplifier[J]. Radio Engineering 2017,47(3):54-57.
[7]南敬昌,杜学坤.基于平衡结构的高效率E类功率放大器设计[J].微电子学,2013,43(5):593-597.NAN Jingchang,DU Xuekun. Design of high efficiency Class E power amplifier based on balanced structure[J].Microelectronics,2013,43(5):593-597.
[8]徐樱杰,王晶琦,朱晓维. Ga N逆F类高效率功率放大器及线性化研究[J].电子与信息学报,2012,34(4):981-985.XU Yingjie,WANG Jingqi,ZHU Xiaowei. Investigation on Ga N Inverse Class-F Highly Efficient Power Amplifier and Linearization[J]. Journal of Electronics&Information Technology,2012,34(4):981-985.
[9]王韧,罗孝均,杨仕润,等.S波段Ga N HEMT宽带逆F类高效率功率放大器设计[J].微波学报,2014,30(5):59-62.WANG Ren,LUO Xiaojun,YANG Shirun,et al. Design of S-band Wide-Band Ga N HEMT High Efficiency Inverse Class-F Power Amplifier[J]. Journal of Microwaves,2014,30(5):59-62.
[10] LUDWIG R,BRETCHKO P. RF circuit design:theory and applications[M]. Chicago:Prentice-all,Inc,2000:612-619.
[11]张凯. L波段平衡式功率放大器设计与研制[D].西安:西安电子科技大学,2012.ZHANG Kai. Design and Fabrication of L-Band Balanced Power Amplifier[D].Xi’an:Xidian University,2012.
[12]吴一多,陈晓光,宋汉斌.200 W平衡式脉冲功率放大器的设计与实现[J].电子器件,2010,33(4):471-475.WU Yiduo,CHEN Xiaoguang,SONG Hanbin. Design and realization of 200 W balanced structure pulse power amplifier[J].Chinese Journal of Electron Devices,2010,33(4):471-475.
[13] MORTAZAVI S.Y,KOH K J. Integrated Inverse Class-F Silicon Power Amplifier for High Power Efficiency at Microwave and mm-Wave[J]. IEEE Journal of Solid-State Circuit,2016,51(10):2420-2434.
[14]李玉龙. F类/逆F类功率放大器研究与设计[D].桂林:广西师范大学,2016.LI Yulong. F Class/Inverse F Class Power Amplifier Research and Design[D]. Guilin:Guangxi Normal University,2016.
[15]何强.2.4 GHz逆F类Ga N HEMT功率放大器的实现[J].南京工业职业技术学院学报,2015,15(3):5-8.HE Qiang. Realization of 2.4 GHz Inverse Class-F Ga N HEMT PA[J]. Journal of Nanjing Institute of Industry Technology,2015,15(3):5-8.
[16]尤览,丁瑶,杨光,等.采用寄生补偿的高效率逆F类Ga N HEMT功率放大器[J].微波学报,2011,27(5):50-54.YOU Lan,DING Yao,YANG Guang,et al. A High Efficiency Ga N HEMT Inverse Class-F Power Amplifier Using Parasitic Compensation[J]. Journal of Microwaves,2011,27(5):50-54.
[17]刘长军,黄卡玛,闫丽萍.射频通信电路设计[M].北京:科学出版社,2005:226-235.LIU Changjun,HUANG Kama,YAN Liping. RF Communication Circuits Design[M]. Beijing:Science Press,2005:226-235.
[18]邓向科.基于F类功率放大器的Outphasing发射机研究[D].成都:电子科技大学,2007.DENG Xiangke. Research on Outphasing transmitter based on class F power amplifier[D]. Chengdu:University of Electronic Science and Technology of China,2007.