基于M57962AL芯片的大功率IGBT驱动与保护设计
|
摘要
根据大功率绝缘栅双极型晶体管(IGBT)对驱动电路和保护的要求,提出一种基于M57962AL的实用型大功率IGBT驱动电路及其保护的设计方案,该设计方案选取IGBT输出特性曲线的拐点作为短路保护阈值点,可有效防止误保护。以FF1200R17KE3_B2为例,根据提出的设计方案设计合适的驱动参数、保护参数及外围电路。通过短路保护测试及大功率实验结果验证该驱动电路具有良好的驱动和保护能力。
According to requirement of drive and protection circuit for high-power insulated gate bipolar transistor(IGBT),the design of drive and protection circuit for high-power IGBT which based on M57962 AL is proposed.This design selects turning-point of output characteristic curve of IGBT as the threshold of short circuit protection,which can avoid fault of protection effectively.Based on the design scheme,the drive and protection circuit for FF1200R17KE3_B2is proposed.All of the excellent functions are validated by short circuit protection test and the high-power experiment.
According to requirement of drive and protection circuit for high-power insulated gate bipolar transistor(IGBT),the design of drive and protection circuit for high-power IGBT which based on M57962 AL is proposed.This design selects turning-point of output characteristic curve of IGBT as the threshold of short circuit protection,which can avoid fault of protection effectively.Based on the design scheme,the drive and protection circuit for FF1200R17KE3_B2is proposed.All of the excellent functions are validated by short circuit protection test and the high-power experiment.
引文
[1]徐政.柔性直流输电系统[M].北京:机械工业出版社.2013.
[2]Mori M.Oyama K.Arai T.et.al.A Planar-gate High-conductivity IGBT(HiGT)With Hole-barrier layer[J].IEEE Trans.on Electron Devices,2007,54(6):1515-1520.
[3]Rahimo M.Kopta A.Eicher S.Next Generation Planar IGBTs With SPT Technology[J].Power Electronics Europe Magazine,2005,6(9):1-5.
[4]Yuan Shoucai.LIU Yamei,Two-mask Silicides Fully Selfaligned for Trench Gate Power IGBTs With Superjunction Structure[J].IEEE Electron Device Letters,2008,29(8):931-933.
[5]袁寿财,刘亚媚.平面工艺IGBT制作及导通压降的PIN模型计算[J].西南交通大学学报,2009,44(5):648-653.
[6]唐勇,胡安,陈明.IGBT栅极特性与参数提取[J].电工技术学报,2009,24(7):76-80.
[7]曾繁玲.IGBT驱动与保护电路的研究[J].仪表技术,2007,11(7):61-63.
[8]陶健.中大功率IGBT驱动及串并联特性应用研究[D].西安:西安理工大学.2003.
[9]丛晓艳,尚雷,陆业明.PFN充电高压电源的IGBT驱动电路设计[J].高电压技术,2006,32(2);78-80.
[10]刘胜利.现代高频开关电源实用技术[M].北京:电子工业出版社.2001.
[11]杜芬.CPLD在高功率C02激光器开关电源驱动中的应用[D].武汉:华中科技大学,2007.
[12]黄先进,蒋晓春,叶斌,等.智能化IGBT驱动电路研究[J].电工技术学报,2005,20(4):89-93.
[2]Mori M.Oyama K.Arai T.et.al.A Planar-gate High-conductivity IGBT(HiGT)With Hole-barrier layer[J].IEEE Trans.on Electron Devices,2007,54(6):1515-1520.
[3]Rahimo M.Kopta A.Eicher S.Next Generation Planar IGBTs With SPT Technology[J].Power Electronics Europe Magazine,2005,6(9):1-5.
[4]Yuan Shoucai.LIU Yamei,Two-mask Silicides Fully Selfaligned for Trench Gate Power IGBTs With Superjunction Structure[J].IEEE Electron Device Letters,2008,29(8):931-933.
[5]袁寿财,刘亚媚.平面工艺IGBT制作及导通压降的PIN模型计算[J].西南交通大学学报,2009,44(5):648-653.
[6]唐勇,胡安,陈明.IGBT栅极特性与参数提取[J].电工技术学报,2009,24(7):76-80.
[7]曾繁玲.IGBT驱动与保护电路的研究[J].仪表技术,2007,11(7):61-63.
[8]陶健.中大功率IGBT驱动及串并联特性应用研究[D].西安:西安理工大学.2003.
[9]丛晓艳,尚雷,陆业明.PFN充电高压电源的IGBT驱动电路设计[J].高电压技术,2006,32(2);78-80.
[10]刘胜利.现代高频开关电源实用技术[M].北京:电子工业出版社.2001.
[11]杜芬.CPLD在高功率C02激光器开关电源驱动中的应用[D].武汉:华中科技大学,2007.
[12]黄先进,蒋晓春,叶斌,等.智能化IGBT驱动电路研究[J].电工技术学报,2005,20(4):89-93.