自蔓延合成β-SiC粉制备碳化硅陶瓷
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摘要
本研究采用自蔓延合成β-SiC粉体,添加硼、碳烧结助剂,在不同的烧结温度下,经过无压烧结制备了碳化硅陶瓷。测试了试样密度、烧失率及收缩率,分析研究了不同烧结温度下样品的致密度。通过对比三组不同烧结助剂配方对烧成品致密的影响,并结合样品的显微结构和相组成分析表征,研究了陶瓷微观形态与表观性能的关系。实验结果表明:烧结助剂B含量为1 wt%、C含量为1.5 wt%时,2000℃下烧结得到的材料致密度最佳,其值为2.77g/cm~3。
SiC ceramics were prepared by using self-propagating synthesized β-SiC powder mixed with B and C sintering additives, pressureless sintering at different sintering temperatures. The densities of the sintered samples were tested and the weight loss rates and shrinkage rates of the samples were calculated. The effect of sintering temperature and also the compositions on the density of the sintered bodies were analyzed. The experimental results show that the density of sintered samples reached the highest at sintering temperature of 2000℃ with B content of 1 wt% and C content of 1.5 wt%.
SiC ceramics were prepared by using self-propagating synthesized β-SiC powder mixed with B and C sintering additives, pressureless sintering at different sintering temperatures. The densities of the sintered samples were tested and the weight loss rates and shrinkage rates of the samples were calculated. The effect of sintering temperature and also the compositions on the density of the sintered bodies were analyzed. The experimental results show that the density of sintered samples reached the highest at sintering temperature of 2000℃ with B content of 1 wt% and C content of 1.5 wt%.
引文
[1]陈宇红,韩凤兰,吴澜尔.碳化硅陶瓷的无压烧结技术[J].宁夏工程技术,2002,(1):32-34.
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[7]吴澜尔,张树阁,陈百义.自蔓延燃烧合成SiC-Si3N4复合粉末的研究[R].第八届全国颗粒制备与处理学术和应用研讨会.银川:中国颗粒学会颗粒制备与处理专业委员会,2007.
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[9]李县辉.大尺寸碳化硅结构陶瓷件制备研究[D].北京:北京科技大学博士学位论文,2015.
[10]GROSS E,DAHAN DB,KAPLAN WD.The role of carbon and Si O2 in solid-state sintering of SiC[J].Journal of the European Ceramic Society,2015,35(7):2001–2005.
[11]GROSS E,SAUNDERS T,PORWAL H,et al.Ultra-high temperature spark plasma sintering ofα-SiC[J].Ceramics International,2015,41(1):225–230.
[12]GUBERNAT A,STOBIERSKI L,LABAJ P.Microstructure and mechanical properties of silicon carbide pressureless sintered with oxide additives[J]Journal of the European Ceramic Society,2007,27(2):781–789.
[2]黄智恒,贾德昌,杨治华,等.碳化硅陶瓷的活化烧结与烧结助剂[J].材料科学与工艺,2004,12(1):103-107.
[3]王静,张玉军,龚红宇.无压烧结碳化硅研究进展[J].陶瓷,2008,(4):17-19.
[4]武安华,曹文斌,李江涛,等.SiC烧结的研究进展[J].粉末冶金工业,2002,12(3):28-31.
[5]杨林福,汪厚植,顾华志.自蔓延高温合成?-SiC超细粉[J],耐火材料,1995,29(4):192-195.
[6]王铁军,王声宏.预热自蔓延合成SiC粉末机理的研究[J].硅酸盐学报,1998,26(2):237-242.
[7]吴澜尔,张树阁,陈百义.自蔓延燃烧合成SiC-Si3N4复合粉末的研究[R].第八届全国颗粒制备与处理学术和应用研讨会.银川:中国颗粒学会颗粒制备与处理专业委员会,2007.
[8]沈强,李然,张联盟.?-SiC的SPS烧结致密化研究[J].武汉理工大学学报,2003,25(6):16-18.
[9]李县辉.大尺寸碳化硅结构陶瓷件制备研究[D].北京:北京科技大学博士学位论文,2015.
[10]GROSS E,DAHAN DB,KAPLAN WD.The role of carbon and Si O2 in solid-state sintering of SiC[J].Journal of the European Ceramic Society,2015,35(7):2001–2005.
[11]GROSS E,SAUNDERS T,PORWAL H,et al.Ultra-high temperature spark plasma sintering ofα-SiC[J].Ceramics International,2015,41(1):225–230.
[12]GUBERNAT A,STOBIERSKI L,LABAJ P.Microstructure and mechanical properties of silicon carbide pressureless sintered with oxide additives[J]Journal of the European Ceramic Society,2007,27(2):781–789.