直拉法硅单晶生长中断棱与掉苞问题的探讨
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摘要
在直拉法硅单晶生长过程中,由于位错的产生经常会导致硅棒发生断棱与掉苞现象,严重影响了晶体硅和器件的性能,降低了硅太阳能电池的光电转换效率。为了分析该现象,借助于位错形成的理论,探讨了Φ203mm(100)硅棒发生断棱与掉苞的具体原因及应对措施。影响直拉法单晶硅棒发生断棱与掉苞的因素包括:熔体中过多的杂质,热场、机械传动装置及炉体的不稳定等。
The growth problems in CZ-Si crystal occurs frequently in silicon single crystal growth due to dislocations,has seriously affected the quality of crystal silicon and the performance of the device,reducing the photoelectric conversion efficiency of solar cells.In order to analyze the growth problems in CZ-Si crystal,with the help of the formation of dislocation theory,the specific causes of growth problems in(100) silicon crystal of Φ203 mm and counter measures are discussed.The main factors are the too many impurities in melt,the instability of thermal field,mechanical transmission devices and furnace.
The growth problems in CZ-Si crystal occurs frequently in silicon single crystal growth due to dislocations,has seriously affected the quality of crystal silicon and the performance of the device,reducing the photoelectric conversion efficiency of solar cells.In order to analyze the growth problems in CZ-Si crystal,with the help of the formation of dislocation theory,the specific causes of growth problems in(100) silicon crystal of Φ203 mm and counter measures are discussed.The main factors are the too many impurities in melt,the instability of thermal field,mechanical transmission devices and furnace.
引文
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13黄有志,王丽.直拉单晶硅工艺技术[M].北京:化学工业出版社,2009:51
14李巨晓,庄力.机械振动对直拉法Si单晶生长的影响[J].半导体技术,2008,33(4):304
15李巨晓,孙新利,王飞尧,等.直拉法硅单晶生长时晃动的分析及控制[J].半导体技术,2010,35(11):1083
2曾徵丹,马向阳,陈加和,等.氧沉淀对直拉硅单晶硬度的影响[J].稀有金属,2009,33(5):758
3张晓燕,陈湘香,刘克家.位错的统计力学以及位错引起晶体的熔化理论[J].上海应用技术学院学报:自然科学版,2010,10(2):92
4张国栋,翟慎秋,崔红卫,等.半导体单晶生长过程中的位错研究[J].人工晶体学报,2007,36(2):301
5曾庆凯,关小军,潘忠奔,等.Φ400mm直拉硅单晶生长过程中氧浓度对微缺陷影响的数值模拟[J].人工晶体学报,2011,40(5):1150
6 Capan I,Borjanovic V,Piavc B.Dislocation-related deeplevels in carbon rich p-type polycrystalline silicon[J].SolarEnergy Mater Solar Cells,2007,91:931
7 Sanchez E K,Liu J Q,Graef M D,et al.Nucleation ofthreading dislocations in sublimation grown silicon carbide[J].J Appl Phys,2002,91(3):1143
8 Chen Q,Liu X Y,Biner S B.Solute and dislocation junctioninteractions[J].Acta Mater,2008,56:2937
9裴志军,纪秀峰,刘峰.4英寸(111)硅单晶制备中的“断棱”与“掉苞”问题[J].半导体杂志,1998,23(3):20
10Dash W C.Improvements on the pedestal method of growingsilicon and germanium crystal[J].J Appl Phys,1960,31:736
11 Taishi T,Huang X M,et al.Behavior of the edge disloca-tion propagating along the growth direction in Czochralski Sicrystal growth[J].J Cryst Growth,2005,275:2147
12 Duseaux M,Jacob G.Formation of dislocations during li-quid encapsulated Czochralski growth of GaAs single crystal[J].Appl Phys Lett,1982,40(9):790
13黄有志,王丽.直拉单晶硅工艺技术[M].北京:化学工业出版社,2009:51
14李巨晓,庄力.机械振动对直拉法Si单晶生长的影响[J].半导体技术,2008,33(4):304
15李巨晓,孙新利,王飞尧,等.直拉法硅单晶生长时晃动的分析及控制[J].半导体技术,2010,35(11):1083