固态限流器中大功率IGCT并联关断保护电路
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摘要
集成门极换流晶闸管(integrated gate commutated thyristor,IGCT)具有大电流导通损耗低和关断过程快速均匀可靠等特性,在固态限流器(solid state fault current limiter,SSFCL)应用中具有综合优势。为此,针对固态限流器中并联运行的大功率IGCT,通过构建器件的集总电荷仿真模型对其关断过程进行了仿真分析,并结合试验验证深入研究了RC阻容缓冲和压敏电阻保护对并联IGCT关断特性的影响。大电流关断研究结果表明:RC缓冲能进一步缓解并联IGCT关断过程中的电流拥挤现象,降低拖尾电流下降率,减轻器件动态雪崩击穿的剧烈程度;在固态限流器中回路电感和关断电流均比较大的条件下,增加RC缓冲能大幅提高并联器件的关断可靠性。该研究成果可以为并联IGCT有效保护方案的设计提供参考。
Possessing the characteristics of relatively low on-state loss, as well as very quickly, uniformly and reliably turning off process for a large current, the integrated gate commutated thyristor(IGCT) has gained comprehensive advantages in a solid state fault current limiter(SSFCL). Aiming at the parallel connected large power IGCTs in a SSFCL, we simulated the turning off process through a lump charge IGCT model developed in this paper. Then, we studied the effects of RC snubber & metal oxide varistor protection on the parallel IGCTs turning off characteristics with the help of some related tests. The large current turning-off research results indicate that the current crowding phenomena can be relieved further, the falling rate of tail current may be reduced a lot and the dynamic avalanche breakdown will be alleviated very much for the parallel IGCTs turning off with a RC snubber. The turning off process for the parallel devices will be more reliable if an additional RC snubber is adopted in a SSFCL with large current and circuit inductance. These achievements can be taken as references for designing valid parallel IGCTs protection schemes.
Possessing the characteristics of relatively low on-state loss, as well as very quickly, uniformly and reliably turning off process for a large current, the integrated gate commutated thyristor(IGCT) has gained comprehensive advantages in a solid state fault current limiter(SSFCL). Aiming at the parallel connected large power IGCTs in a SSFCL, we simulated the turning off process through a lump charge IGCT model developed in this paper. Then, we studied the effects of RC snubber & metal oxide varistor protection on the parallel IGCTs turning off characteristics with the help of some related tests. The large current turning-off research results indicate that the current crowding phenomena can be relieved further, the falling rate of tail current may be reduced a lot and the dynamic avalanche breakdown will be alleviated very much for the parallel IGCTs turning off with a RC snubber. The turning off process for the parallel devices will be more reliable if an additional RC snubber is adopted in a SSFCL with large current and circuit inductance. These achievements can be taken as references for designing valid parallel IGCTs protection schemes.
引文
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[15]肖友国,彭振东,任志刚.基于Saber的IGCT集总电荷模型研究[J].电力电子技术,2015,49(11):83-86.XIAO Youguo,PENG Zhendong,REN Zhigang.Research on lump-charge model of IGCT using saber software[J].Power Electronics,2015,49(11):83-86.
[16]肖友国.基于IGCT的中压固态限流器研究[D].武汉:武汉船用电力推进装置研究所,2015.XIAO Youguo.Research on solid-state current limiter of medium voltage based on IGCT[D].Wuhan,China:Wuhan Institute of Marine Electric Propulsion,2015.
[17]ABB.Semiconductors AG.ABB 5SHY35L4510 datasheet[R].Zurish,Switzerland:ABB,2003.
[18]HERMANN R,BERNET S,SUH Y,et al.Parallel connection of integrated gate commutated thyristors(IGCTs)and diodes[J].IEEE Transactions on Power Electronics,2009,24(9):2159-2170.
[19]彭振东,任志刚,姜楠,等.大功率IGCT并联关断过程分析及其试验验证[J].船电技术,2014,34(4):72-75.PEN Zhendong,REN Zhigang,JIANG Nan,et al.Analysis and experiment for turning off process of parallel connected high power IGCTs[J].Marine Electric&Electronic Engineering,2014,34(4):72-75.
[20]LI Y X.Innovative GTO thyristor based switches through unity gain turn-off[D].Blacksburg,USA:Virginia Polytechnic Institute and State University,2000.
[21]LENKE R,VAN HOEK H,TARABORRELLI S,et al.Turn-off behavior of 4.5 k V asymmetric IGCTs under zero voltage switching conditions[C]∥Proceedings of the 2011-14th European Conference on Power Electronics and Applications(EPE 2011).Birmingham,UK:IEEE,2011:1-10.
[22]LUTZ J,SCHLANGENOTTO H,SCHEUERMANN U,et al.Semiconductors power devices:physics,characteristics,reliability[M].Berlin,Germany:Springer Verlag,2011.
[2]涂春鸣,姜飞,郭成,等.多功能固态限流器的现状及展望[J].电工技术学报,2015,30(16):146-153.TU Chunming,JIANG Fei,GUO Cheng,et al.Present state and perspectives of multi-function solid-state fault current limiter[J].Transactions of China Electrotechnical Society,2015,30(16):146-153.
[3]张帆,杨旭,任宇,等.一种适用于固态直流断路器的IGBT串联均压电路[J].中国电机工程学报,2016,36(3):656-663.ZHANG Fan,YANG Xu,REN Yu,et al.Voltage balancing circuit for series-connected IGBTs in solid-state breaker[J].Proceedings of the CSEE,2016,36(3):656-663.
[4]AGOSTINI F,VEMULAPATI U,TORRESIN D,et al.1 MW bi-directional DC solid state circuit breaker based on air cooled reverse blocking-IGCT[C]∥2015 IEEE Electric Ship Technologies Symposium(ESTS).Alexandria,USA:IEEE,2015:287-292.
[5]彭振东,任志刚,姜楠,等.新型直流固态限流断路器设计与分析[J].中国电机工程学报,2017,37(4):1028-1036.PENG Zhendong,REN Zhigang,JIANG Nan,et al.Design and analysis for a novel DC solid state current limiting circuit breaker[J].Proceedings of the CSEE,2017,37(4):1028-1036.
[6]XU Z X,ZHANG B,SIRISUKPRASERT S,et al.The emitter turn-off thyristor-based DC circuit breaker[C]∥2002 IEEE Power Engineering Society Winter Meeting:Vol 1.New York,USA:IEEE,2002:288-293.
[7]SAADEH O S,JOHNSON E D,SAADEH M S,et al.A 4 k V silicon carbide solid-state fault current limiter[C]∥2012 IEEE Energy Conversion Congress and Exposition(ECCE).Raleigh,USA:IEEE,2012:4445-4449.
[8]ALTO P.Solid-state fault current limiter development:design of a 15.5k V field-ready unit[R].Palo Alto,USA:EPRI,2013.
[9]兰志明,李崇坚,绳伟辉,等.集成门极换向晶闸管开关特性[J].电工技术学报,2007,22(7):93-97.LAN Zhiming,LI Chongjian,SHENG Weihui,et al.Switching characteristics of integrated gate commutated thyristors[J].Transactions of China Electrotechnical Society,2007,22(7):93-97.
[10]袁立强,赵争鸣,白华,等.用于大功率变流器的IGCT功能型模型[J].中国电机工程学报,2004,24(6):65-69.YUAN Liqiang,ZHAO Zhengming,BAI Hua,et al.The functional model of IGCTs for the circuit simulation of high voltage converters[J].Proceedings of the CSEE,2004,24(6):65-69.
[11]王佳蕊,孔力,屈慧,等.基于傅里叶级数的改进型IGCT物理模型[J].高电压技术,2017,43(7):2175-2182.WANG Jiarui,KONG Li,QU Hui,et al.Improved IGCT physical model based on Fourier series[J].High Voltage Engineering,2017,43(7):2175-2182.
[12]王佳蕊,孔力,周亚星,等.IGCT变流器箝位电路分析及参数设计[J].中国电机工程学报,2017,37(15):4463-4472.WANG Jiarui,KONG Li,ZHOU Yaxing,et al.Analysis and parameters design of clamping circuit for IGCT converters[J].Proceedings of the CSEE,2017,37(15):4463-4472.
[13]KUHN H,SCHRBDER D.A new validated physically based IGCT model for circuit simulation of snubberless and series operation[C]∥Conference Record of the 2000 IEEE Industry Applications Conference:Vol 1.Rome,Italy:IEEE,2000:2866-2872.
[14]WANG X B.Characteristics and simulation of integrated gate commutate thyristor(IGCT)[D].Columbia,USA:University of South Carolina,2004.
[15]肖友国,彭振东,任志刚.基于Saber的IGCT集总电荷模型研究[J].电力电子技术,2015,49(11):83-86.XIAO Youguo,PENG Zhendong,REN Zhigang.Research on lump-charge model of IGCT using saber software[J].Power Electronics,2015,49(11):83-86.
[16]肖友国.基于IGCT的中压固态限流器研究[D].武汉:武汉船用电力推进装置研究所,2015.XIAO Youguo.Research on solid-state current limiter of medium voltage based on IGCT[D].Wuhan,China:Wuhan Institute of Marine Electric Propulsion,2015.
[17]ABB.Semiconductors AG.ABB 5SHY35L4510 datasheet[R].Zurish,Switzerland:ABB,2003.
[18]HERMANN R,BERNET S,SUH Y,et al.Parallel connection of integrated gate commutated thyristors(IGCTs)and diodes[J].IEEE Transactions on Power Electronics,2009,24(9):2159-2170.
[19]彭振东,任志刚,姜楠,等.大功率IGCT并联关断过程分析及其试验验证[J].船电技术,2014,34(4):72-75.PEN Zhendong,REN Zhigang,JIANG Nan,et al.Analysis and experiment for turning off process of parallel connected high power IGCTs[J].Marine Electric&Electronic Engineering,2014,34(4):72-75.
[20]LI Y X.Innovative GTO thyristor based switches through unity gain turn-off[D].Blacksburg,USA:Virginia Polytechnic Institute and State University,2000.
[21]LENKE R,VAN HOEK H,TARABORRELLI S,et al.Turn-off behavior of 4.5 k V asymmetric IGCTs under zero voltage switching conditions[C]∥Proceedings of the 2011-14th European Conference on Power Electronics and Applications(EPE 2011).Birmingham,UK:IEEE,2011:1-10.
[22]LUTZ J,SCHLANGENOTTO H,SCHEUERMANN U,et al.Semiconductors power devices:physics,characteristics,reliability[M].Berlin,Germany:Springer Verlag,2011.