SiC MOSFET密勒电容分析及影响
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摘要
SiC材料具有禁带宽度大、击穿电场高、热导率大等特点。已成为Si功率器件的良好替代品,广泛应用在电力电子领域。随着开关频率的提高,原本在Si基中可以忽略的寄生参数在SiC中显得尤为重要。寄生参数决定了SiC功率器件的损耗,更是决定了器件使用的条件。本文进行理论加仿真进行验证,详细分析了SiCMOSFET开关过程中密勒平台形成的原因,以及密勒电容带来的上下桥臂串扰问题。并结合前人的抑制串扰电路,改进一款利用三极管反并联二极管的电路抑制栅极的正反向串扰。最后利用LTspice仿真软件对改进的被动式密勒箝位电路进行仿真分析。
SiC materials are characterized by wide bandgap, high breakdown electric field and high thermal conductivity.Has become a good substitute for Si power devices, widely used in the field of power electronics.With the increase of switching frequency, parasitic parameters that could be neglected in Si base become particularly important in SiC.Parasitic parameters determine the loss of SiC power devices, but also determine the conditions for the use of devices.In this paper, theoretical and simulation verification, detailed analysis of the formation of the miller platform in the SiC MOSFET switching process, as well as the upper and lower bridge crosstalk problems caused by miller capacitance.In addition, combining with the previous suppression crosstalk circuit, an improved circuit using the triode anti-parallel diode to suppress the positive and negative crosstalk of the gate is presented.Finally, LTspice simulation software is used to analyze the improved passive miller clamp circuit
SiC materials are characterized by wide bandgap, high breakdown electric field and high thermal conductivity.Has become a good substitute for Si power devices, widely used in the field of power electronics.With the increase of switching frequency, parasitic parameters that could be neglected in Si base become particularly important in SiC.Parasitic parameters determine the loss of SiC power devices, but also determine the conditions for the use of devices.In this paper, theoretical and simulation verification, detailed analysis of the formation of the miller platform in the SiC MOSFET switching process, as well as the upper and lower bridge crosstalk problems caused by miller capacitance.In addition, combining with the previous suppression crosstalk circuit, an improved circuit using the triode anti-parallel diode to suppress the positive and negative crosstalk of the gate is presented.Finally, LTspice simulation software is used to analyze the improved passive miller clamp circuit
引文
[1]CHEN Z,BOROYEVICH D,BURGOS R.Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics[C]//Power Electronics Conference(IPEC),2010 International.IEEE,2010.
[2]LI H,MUNKNIELSEN S.Detail study of SiC MOSFETswitching characteristics[C]//IEEE International Symposium on Power Electronics for Distributed Generation Systems.IEEE,2014.
[3]CHEN Z,BOROYEVICH D,BURGOS R.Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics[C]//Power Electronics Conference(IPEC),2010 International.IEEE,2010.
[4]NAYAK P,KRISHNA M V,VASUDEVAKRISHNA K,et al.Study of the effects of parasitic inductances and device capacitances on 1200 V,35 A SiC MOSFET based voltage source inverter design[C]//IEEE International Conference on Power Electronics.IEEE,2015.
[5]钟志远,秦海鸿,袁源,等.碳化硅MOSFET桥臂电路串扰抑制方法[J].电工电能新技术,2015,34(5):8-12+23.ZHONG Zhi-yuan,QIN Hai-hong,YUAN Yuan,et al.Crosstalk suppression method of silicon carbide MOSFETbridge arm circuit[J].New technology of electrical energy,2015,34(5):8-12+23.
[6]范春丽,余成龙,龙觉敏,等.寄生参数对Si C MOSFET开关特性的影响[J].上海电机学院学报,2015,18(04):191-200.FAN Chun-li,YU Cheng-long,LONG Je-min,et al.Effects of parasitic parameters on switching characteristics of SiC MOSFET[J].Journal of Shanghai institute of electrical technology,2015,18(04):191-200.
[7]巴腾飞,李艳,梁美.寄生参数对SiC MOSFET栅源极电压影响的研究[J].电工技术学报,2016,31(13):64-73.BA Teng-fei,LI Yan,LIANG Mei.Effect of parasitic parameters on source voltage of SiC MOSFET[J].Journal of electrotechnics,2016,31(13):64-73
[8]秦海鸿,朱梓悦,戴卫力,等.寄生电感对Si C MOSFET开关特性的影响[J].南京航空航天大学学报,2017,49(04):531-539.QIN Hai-hong,ZHU Zi-yue,DAI Wei-li,et al.Effects of parasitic inductance on switching characteristics of SiCMOSFET[J].Journal of nanjing university of aeronautics and astronautics,2017,49(04):531-539.
[9]LIU T,NING R,WONG T T Y,et al.Modeling and Analysis of SiC MOSFET Switching Oscillations[J].IEEEJournal of Emerging&Selected Topics in Power Electronics,2017,4(3):747-756.
[10]WANG J,CHUNG H S,LI R T.Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance[J].IEEETransactions on Power Electronics,2013,28(1):573-590.
[11]HOCNM,CANALESF,COCCIAA,LAITINENM.ACircuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters[P].Industry Applications Society Annual Meeting,2008.IAS'08.IEEE,2008.
[12]ZHANG Z,ZHANG W,WANG F,et al.Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration[C]//Energy Conversion Congress&Exposition.IEEE,2012.
[13]ZHANG Z,WANG F,TOLBERT L M,et al.Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration[J].IEEE Transactions on Power Electronics,2014,29(4):1986-1997.
[14]李辉,黄樟坚,廖兴林,等.一种抑制Si C MOSFET桥臂串扰的改进门极驱动设计[J].电工技术学报,2019,34(02):275-285.LI Hui,HUANG Zhang-jian,LIAO Xing-lin,et al.An improved gate drive design for restraining SiC MOSFETbridge arm crosstalk[J].Transactions of China Electrotechnical Society,2019,34(02):275-285.
[15]梁美.碳化硅功率器件高速应用关键技术研究[D].北京:北京交通大学,2017.LIANG Mei.Research on key technologies for highspeed application of silicon carbide power devices[D].Beijing:Beijing Jiaotong University,2017.
[16]周琦.碳化硅MOSFET驱动技术研究[D].山东大学,2016.ZHOU Qi.Research on silicon carbide MOSFET driving technology[D].Shandong University,2016.
[17]赵斌.SiC功率器件特性及其在Buck变换器中的应用研究[D].南京:南京航空航天大学,2014.ZHAO Bin.SiC power device characteristics and its application in Buck converter[D].Nanjing:Nanjing University of Aeronautics and Astronautics,2014.
[2]LI H,MUNKNIELSEN S.Detail study of SiC MOSFETswitching characteristics[C]//IEEE International Symposium on Power Electronics for Distributed Generation Systems.IEEE,2014.
[3]CHEN Z,BOROYEVICH D,BURGOS R.Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics[C]//Power Electronics Conference(IPEC),2010 International.IEEE,2010.
[4]NAYAK P,KRISHNA M V,VASUDEVAKRISHNA K,et al.Study of the effects of parasitic inductances and device capacitances on 1200 V,35 A SiC MOSFET based voltage source inverter design[C]//IEEE International Conference on Power Electronics.IEEE,2015.
[5]钟志远,秦海鸿,袁源,等.碳化硅MOSFET桥臂电路串扰抑制方法[J].电工电能新技术,2015,34(5):8-12+23.ZHONG Zhi-yuan,QIN Hai-hong,YUAN Yuan,et al.Crosstalk suppression method of silicon carbide MOSFETbridge arm circuit[J].New technology of electrical energy,2015,34(5):8-12+23.
[6]范春丽,余成龙,龙觉敏,等.寄生参数对Si C MOSFET开关特性的影响[J].上海电机学院学报,2015,18(04):191-200.FAN Chun-li,YU Cheng-long,LONG Je-min,et al.Effects of parasitic parameters on switching characteristics of SiC MOSFET[J].Journal of Shanghai institute of electrical technology,2015,18(04):191-200.
[7]巴腾飞,李艳,梁美.寄生参数对SiC MOSFET栅源极电压影响的研究[J].电工技术学报,2016,31(13):64-73.BA Teng-fei,LI Yan,LIANG Mei.Effect of parasitic parameters on source voltage of SiC MOSFET[J].Journal of electrotechnics,2016,31(13):64-73
[8]秦海鸿,朱梓悦,戴卫力,等.寄生电感对Si C MOSFET开关特性的影响[J].南京航空航天大学学报,2017,49(04):531-539.QIN Hai-hong,ZHU Zi-yue,DAI Wei-li,et al.Effects of parasitic inductance on switching characteristics of SiCMOSFET[J].Journal of nanjing university of aeronautics and astronautics,2017,49(04):531-539.
[9]LIU T,NING R,WONG T T Y,et al.Modeling and Analysis of SiC MOSFET Switching Oscillations[J].IEEEJournal of Emerging&Selected Topics in Power Electronics,2017,4(3):747-756.
[10]WANG J,CHUNG H S,LI R T.Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance[J].IEEETransactions on Power Electronics,2013,28(1):573-590.
[11]HOCNM,CANALESF,COCCIAA,LAITINENM.ACircuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters[P].Industry Applications Society Annual Meeting,2008.IAS'08.IEEE,2008.
[12]ZHANG Z,ZHANG W,WANG F,et al.Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration[C]//Energy Conversion Congress&Exposition.IEEE,2012.
[13]ZHANG Z,WANG F,TOLBERT L M,et al.Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration[J].IEEE Transactions on Power Electronics,2014,29(4):1986-1997.
[14]李辉,黄樟坚,廖兴林,等.一种抑制Si C MOSFET桥臂串扰的改进门极驱动设计[J].电工技术学报,2019,34(02):275-285.LI Hui,HUANG Zhang-jian,LIAO Xing-lin,et al.An improved gate drive design for restraining SiC MOSFETbridge arm crosstalk[J].Transactions of China Electrotechnical Society,2019,34(02):275-285.
[15]梁美.碳化硅功率器件高速应用关键技术研究[D].北京:北京交通大学,2017.LIANG Mei.Research on key technologies for highspeed application of silicon carbide power devices[D].Beijing:Beijing Jiaotong University,2017.
[16]周琦.碳化硅MOSFET驱动技术研究[D].山东大学,2016.ZHOU Qi.Research on silicon carbide MOSFET driving technology[D].Shandong University,2016.
[17]赵斌.SiC功率器件特性及其在Buck变换器中的应用研究[D].南京:南京航空航天大学,2014.ZHAO Bin.SiC power device characteristics and its application in Buck converter[D].Nanjing:Nanjing University of Aeronautics and Astronautics,2014.