磁控溅镀法制备Al掺杂ZnO薄膜的特性分析
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摘要
以射频磁控溅镀法在柔性聚碳酸酯基板上成长Al掺杂ZnO薄膜,利用XRD、AES、霍尔效应测试仪及单色分光计测量分析Al靶功率对薄膜光电特性的影响. XRD分析表明所有薄膜的衍射峰皆以(002)面为主,Al靶功率为25 W时(002)面衍射峰强度最大,此时薄膜结晶性最佳; AES分析表明随着Al靶功率的增大,Al含量由0 at.%增至18.01 at.%,Zn含量则由72.51 at.%降至38.39 at.%,而O含量没有太大变化,这说明Al可以取代ZnO中Zn的位置;霍尔效应测量表明Al靶功率为25 W时电阻率最小,约为7.75×10~(-4)Ω·cm,而载子浓度及其迁移率则达到最大,分别约为9.35×10~(20) cm~(-3)与8.64 cm~2/(V·s);分光计测量表明薄膜在可见光区的平均透射率可约达90%以上,说明本研究制备的Al掺杂ZnO薄膜是具有高透射率的透明导电薄膜.
The Al doped ZnO films were prepared on flexible polycarbonate substrates by RF magnetron sputtering method and then the effect of Al target power on photoelectric properties of these films was analyzed by XRD, AES, Hall effect tester and monochromatic spectrometer. XRD analysis showed that the diffraction peak of all the films is mainly(002) of surface and the peak intensity is the largest for Al target power of 25 W, that is the crystallinity is the best at 25 W. AES analysis showed that Al content increases from 0 at.% to 18.01 at.%, Zn content decreases from 72.51 at.% to 38.39 at.% and O content is not much changed with Al target power increasing, which indicated that Al can replace the position of Zn in ZnO. The Hall effect measurement showed that the resistivity is smallest(about 7.75×10~(-4) Ω·cm) while the carrier concentration and its mobility reach the maximum, about 9.35×10~(20) cm~(-3) and 8.64 cm~2/(V·s) respectively, for Al target power of 25 W. The spectrometer measurement showed that the average transmittance of the films in the visible region is above 90 %, which shows that the Al doped ZnO films are the transparent conductive films with high transmittance.
The Al doped ZnO films were prepared on flexible polycarbonate substrates by RF magnetron sputtering method and then the effect of Al target power on photoelectric properties of these films was analyzed by XRD, AES, Hall effect tester and monochromatic spectrometer. XRD analysis showed that the diffraction peak of all the films is mainly(002) of surface and the peak intensity is the largest for Al target power of 25 W, that is the crystallinity is the best at 25 W. AES analysis showed that Al content increases from 0 at.% to 18.01 at.%, Zn content decreases from 72.51 at.% to 38.39 at.% and O content is not much changed with Al target power increasing, which indicated that Al can replace the position of Zn in ZnO. The Hall effect measurement showed that the resistivity is smallest(about 7.75×10~(-4) Ω·cm) while the carrier concentration and its mobility reach the maximum, about 9.35×10~(20) cm~(-3) and 8.64 cm~2/(V·s) respectively, for Al target power of 25 W. The spectrometer measurement showed that the average transmittance of the films in the visible region is above 90 %, which shows that the Al doped ZnO films are the transparent conductive films with high transmittance.
引文
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[2] Yan F W,Jian M S,Wei Z,et al.Experimental and theoretical analysis of H and Ti co-doped ZnO transparent conductive films [J].Ceram.Int.,2017,43:5396
[3] Xiao H P,Guo G J,Ma X Z,et al.Influence of thermal annealing on photoelectrical properties of indium-tin oxide thin films [J].Laser & Optoelectronics Progress,2017,54:305 (in Chinese) [肖和平,郭冠军,马祥柱,等.热退火处理对氧化铟锡薄膜光电特性的影响[J].激光与光电子学进展,2017,54:305]
[4] Yadav B C,Agrahar K,Singh S,et al.Fabrication and characterization of nanostructured indium tin oxide film and its application as humidity and gas sensors [J].J.Mater.Sci.Mater.El.,2016,27:4172
[5] Schlatmann A R,Floet D W,Hilberer A,et al.Indium contamination from the indium-tin-oxide electrode in polymer light-emitting diodes [J].Appl.Phys.Lett.,1996,69:1764
[6] Jun Q Z,Shi J X,Shen G H,et al.Organic light-emitting diodes with AZO films as electrodes [J].Synthetic Metals,2000,114:251.
[7] Fu K,Lou B Z,Sun YQ,et al.Effects of UV light surface treatment on crystal structure and optical property of ZnO nano-particle[J].J.At.Mol.Phys,2017,34:334 (in Chinese) [付奎,娄本浊,孙彦清,等.紫外光表面处理对ZnO纳米粒子的晶体结构与光学性质的影响[J].原子与分子物理学报,2017,34:334]
[8] Neumann G.On the defect structure of zinc-doped zinc oxide [J].Phys.Stat.Soli.B,1981,105:605
[9] Liu R J,Liang H.Analysis on lattice structure and optical property of Li doped ZnO nanoparticles [J].Inorg.Chem.Industry,2017,49:25 (in Chinese)[刘仁江,梁鸿.锂掺杂氧化锌纳米颗粒晶体结构与光学特性分析[J].无机盐工业,2017,49:25]
[10] He J J,Cheng W J,Gong H X.Preparation and visible-light photocatalytic property of strontium-doped ZnO thin films [J].Inorg.Chem.Industry,017,49:39 (in Chinese)[ 贺晋娟,程文娟,龚恒翔.锶掺杂氧化锌薄膜的制备及其可见光催化性能研究[J].无机盐工业,2017,49:39]
[11] Berger D,Moura A P D,Oliveira L H,et al.Improved photoluminescence emission and gas sensor properties of ZnO thin films [J].Ceram.Int.,2016,42:13555
[12] Wang R L,Ruan H B.Progress of ZnO-based transparent conductive films deposited on flexible substrate [J].Journal of Chongqing Institute of Technology,2015,29:33 (in Chinese) [王然龙,阮海波.柔性ZnO基透明导电薄膜的研究进展[J].重庆理工大学学报,2015,29:33]
[13] Chen H C,Cheng W,Huang K T.Biaxial stress and optoelectronic properties of Al-doped ZnO thin films deposited on flexible substrates by radio frequency magnetron sputtering [J].Appl.Opt.,2017,56:C163
[14] Proost J,Henry F,Tuyaerts R,et al.Effect of internal stress on the electro-optical behaviour of Al-doped ZnO transparent conductive thin films [J].J.Appl.Phys.,2016,120:7025
[15] Waykar R G,Pawbake A S,Kulkarni R R,et al.Influence of RF power on structural,morphology,electrical,composition and optical properties of Al-doped ZnO films deposited by RF magnetron sputtering [J].J.Mater.Sci.Mater.Electron.,2016,27:1134
[16] Patwari G,Kalita P K,Singha R.Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures [J].Mater.Sci.-Poland,2016,34:69.